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US3767484A Expired / Lapsed US ⏱️ 0.0 years remaining

Method of manufacturing semiconductor devices

Assignee: Fujitsu Ltd
•
Filing: 1971-10-06
•
Granted: 1973-10-23
•
Expires: 1991-10-06
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Abstract

Abstract A method of manufacturing a semiconductor device which comprises: forming an oxide film containing an impurity on one surface of a semiconductor substrate; forming an oxidation preventing film on the portion of the oxide film above the region of said substrate into which the impurity is to be diffused; and heating the substrate in an oxidizing atmosphere containing steam to diffuse the impurity into only the region.

Inventors

  • 👤 S Takagi
  • 👤 M Yoshida

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-26 02:37
CPC Classifications
H; H10; H10W; H10W74/00; H10W74/40; H10D; H10D99/00; H10P; H10P32/00; H10P32/10; H10P32/14; H10P32/1408; H10P32/141; H10P32/17; H10P32/171; H10P95/00; Y; Y10; Y10S; Y10S148/00; Y10S148/117; Y10S148/118; Y10S252/00; Y10S252/95; Y10S252/951

Claims Analysis

Total Claims: 2
Claim 1
Independent Claim 77 words
A method of manufacturing an insulated gate field effect transistor, comprising the steps of: a. forming an oxide film containing boron or phosphorous on one surface of a silicon substrate; b. forming silicon nitride films on the portion of said oxide film above the regions of said substrate in which a source and a drain are to be formed; and c. heating said substrate in an oxidizing atmosphere containing steam to form the source and the drain.
Claim 2
Dependent Claim 49 words
The method of claim 2, having the additional steps of removing said oxide film between the source and drain by the use of said silicon nitride films as the mask for chemical etching and forming a gate insulation film on the exposed silicon surface between the source and drain.

References Cited (Backward Citations)

US3306788A Cited
US3640782A Cited
US3574010A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1976-10-22 1977-04-23 1977-10-23 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1980-10-22 1981-04-23 1981-10-23 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1984-10-22 1985-04-23 1985-10-23 $7700.00 Window Closed / Lapsed

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