Method of manufacturing a semiconductor device having improved contact resistance characteristics

Claim 1

A method of manufacturing a semiconductor device comprising: forming an impurity diffused region of n-conductivity type in a silicon substrate comprising a semiconductor body of p-conductivity type; forming a superposed insulation film structure comprising a first insulation layer and a second insulation layer comprising a film of a component selected from the group consisting of phospho-silicate glass, arseno-silicate glass, boro-phospho-silicate glass, boro-arseno-silicate glass, phospho-arseno-silicate glass, and boro-phospho-arseno-silicate glass, said first insulation layer being formed on said semiconductor body, and said second insulation layer being formed on said semiconductor body, and said second insulation layer being formed on said first insulation layer and containing impurities of n-conductivity type; forming in said first and second insulation layers a continuous contact hole opening onto said impurity diffused region; forming a single crystalline semiconductor silicon layer of said n-conductivity type in said contact hole of said first and second insulation layers by an epitaxial growth process, with the single crystalline semiconductor silicon layer contacting said second insulation layer to diffuse said impurities from said second insulation layer into said single crystalline semiconductor silicon layer during said epitaxial growth process to increase an impurity concentration in a surface region thereof while said first insulation layer prevents impurity diffusion into the silicon substrate; and forming a conductive layer on said semiconductor silicon layer.

Claim 2

A method of manufacturing a semiconductor device comprising: forming an impurity diffused region of n-conductivity type in a silicon substrate comprising a semiconductor body of p-conductivity type; forming a superposed insulation film structure comprising a first insulation layer and a second insulation layer comprising a film of a component selected from the group consisting of phospho-silicate glass, arseno-silicate glass, boro-phospho-silicate glass, boro-arseno-silicate glass, phospho-arseno-silicate glass, and boro-phospho-arseno-silicate glass, said first insulation layer being formed on said semiconductor body, and said second insulation layer being formed on said semiconductor body, and said second insulation layer being formed on said first insulation layer and containing impurities of n-conductivity type; forming in said first and second insulation layers a continuous contact hole opening onto said impurity diffused region; forming a single crystalline semiconductor silicon layer of said n-conductivity type in said contact hole of said first and second insulation layers by an epitaxial growth process, with the single crystalline semiconductor silicon layer contacting said second insulation layer to diffuse said impurities from said second insulation layer into said single crystalline semiconductor silicon layer during said epitaxial growth process to increase an impurity concentration in a surface region thereof while said first insulation layer prevents impurity diffusion into the silicon substrate; and forming a conductive layer on said semiconductor silicon layer.