US4364078A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Edge barrier of polysilicon and metal for integrated circuit chips
Assignee: Honeywell Inc
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Filing: 1980-05-16
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Granted: 1982-12-14
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Expires: 2000-05-16
Abstract
Abstract An aluminum over silicon barrier extends over the lateral edges of an integrated circuit chip into adjacent scribe lines forming an edge barrier.
Inventors
- 👤 Paul W. Smith
- 👤 James J. Freeman
- 👤 Donald D. Forsythe
- 👤 Megha Shyam
- 👤 Kenneth K. Yagura
- 👤 Gunnar Wetlesen
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 14:21
CPC Classifications
H; H10; H10W; H10W42/00; H10P; H10P52/00
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
145 words
In a semiconductor integrated circuit die construction within which circuits are defined, including a thermal oxide layer immediately over portions of a substrate, inward from scribe line zones where the substrate is exposed, the improvement comprising, a protective ion barrier forming lateral edges of the die, said edge barrier having a lower layer extending from a substrate surface upwardly, adjacent to scribe line zones where the substrate is exposed, at least as high as the thermal oxide layer disposed upon said substrate and an upper layer immediately covering said lower layer at least in said scribe line zones, said upper and lower ion barrier layers made of different materials, wherein the upper layer of said protective barrier is a metal layer, the lower layer being a layer of polysilicon, each layer resisting ion contamination past the material thereby protecting said die from edgewise ion migration.
Claim 2
Dependent Claim
145 words
In a semiconductor integrated circuit die construction within which circuits are defined, including a thermal oxide layer immediately over portions of a substrate, inward from scribe line zones where the substrate is exposed, the improvement comprising, a protective ion barrier forming lateral edges of the die, said edge barrier having a lower layer extending from a substrate surface upwardly, adjacent to scribe line zones where the substrate is exposed, at least as high as the thermal oxide layer disposed upon said substrate and an upper layer immediately covering said lower layer at least in said scribe line zones, said upper and lower ion barrier layers made of different materials, wherein the upper layer of said protective barrier is a metal layer, the lower layer being a layer of polysilicon, each layer resisting ion contamination past the material thereby protecting said die from edgewise ion migration.
Claim 3
Dependent Claim
12 words
The improved construction of claim 1 wherein said metal layer is aluminum.
Claim 4
Dependent Claim
169 words
In semiconductor integrated circuit wafers of the type comprising a plurality of dice formed on a substrate with at least a thermal oxide layer disposed immediately above the substrate, inward of scribe line zones, with a lateral die perimeter above the substrate defined by the scribe line zones extending from the substrate upwardly exposing the substrate an improved construction comprising, a protective ion barrier forming lateral die edges, completely around the lateral perimeter of each die, said edge barrier having a lower polysilicon layer extending from the substrate surface upwardly, adjacent to scribe line zones where the substrate is exposed at least as high as a thermal oxide layer disposed upon said substrate and an upper layer immediately covering said lower layer at least in said scribe line zones, said upper and lower ion barrier layers made of different materials, each of which resists ionic contamination past the material, wherein the upper layer of said protective barrier is a metal layer, thereby protecting said die from edgewise ion migration.
Claim 5
Dependent Claim
169 words
In semiconductor integrated circuit wafers of the type comprising a plurality of dice formed on a substrate with at least a thermal oxide layer disposed immediately above the substrate, inward of scribe line zones, with a lateral die perimeter above the substrate defined by the scribe line zones extending from the substrate upwardly exposing the substrate an improved construction comprising, a protective ion barrier forming lateral die edges, completely around the lateral perimeter of each die, said edge barrier having a lower polysilicon layer extending from the substrate surface upwardly, adjacent to scribe line zones where the substrate is exposed at least as high as a thermal oxide layer disposed upon said substrate and an upper layer immediately covering said lower layer at least in said scribe line zones, said upper and lower ion barrier layers made of different materials, each of which resists ionic contamination past the material, wherein the upper layer of said protective barrier is a metal layer, thereby protecting said die from edgewise ion migration.
Claim 6
Dependent Claim
12 words
The improved construction of claim 3 wherein said metal layer is aluminum.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1985-12-13 | 1986-06-14 | 1986-12-14 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1989-12-13 | 1990-06-14 | 1990-12-14 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1993-12-13 | 1994-06-14 | 1994-12-14 | $7700.00 | Window Closed / Lapsed |