US4114254A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for manufacture of a semiconductor device
Assignee: Sony Corp
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Filing: 1976-03-22
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Granted: 1978-09-19
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Expires: 1996-03-22
Abstract
Abstract A semiconductor device and method of making the same is disclosed having a surface passivation film of a polycrystalline silicon layer containing 2 to 45 atomic percent of oxygen atoms. The polycrystalline silicon layer is locally electrically insulated by oxidizing throughout the thickness of the layer. The local oxidizing treatment causes the polycrystalline or silicon layer to pattern.
Inventors
- 👤 Teruaki Aoki
- 👤 Motoaki Abe
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 14:39
CPC Classifications
H; H10; H10D; H10D99/00; H10P; H10P95/00; H10P14/00; H10P14/60; H10P14/63; H10P14/6302; H10P14/6304; H10P14/6306; H10P14/6308; H10P14/69; H10P14/692; H10P14/6921; H10P14/69215; Y; Y10; Y10S; Y10S257/00; Y10S257/905; Y10S438/00; Y10S438/911; Y10S438/942; Y10S438/945
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
85 words
A method for the manufacture of a semiconductor device comprising: a. forming a polycrystalline silicon layer containing 2 to 45 atomic percent of oxygen atoms on a semiconductive single crystal substrate, b. forming a masking layer on said polycrystalline silicon layer, c. removing partially said masking layer in predetermined areas to provide windows through said masking layer to said polycrystalline layer, d. oxidizing the exposed portions of said polycrystalline silicon layer, and e. forming an electrode on the oxidized portion below one of the windows.
Claim 2
Independent Claim
85 words
A method for the manufacture of a semiconductor device comprising: a. forming a polycrystalline silicon layer containing 2 to 45 atomic percent of oxygen atoms on a semiconductive single crystal substrate, b. forming a masking layer on said polycrystalline silicon layer, c. removing partially said masking layer in predetermined areas to provide windows through said masking layer to said polycrystalline layer, d. oxidizing the exposed portions of said polycrystalline silicon layer, and e. forming an electrode on the oxidized portion below one of the windows.
Claim 3
Independent Claim
97 words
A method for the manufacture of a semiconductor device comprising: a. forming a polycrystalline silicon layer containing 2 to 45 atomic percent of oxygen atoms on a semiconductive single crystal substrate, b. forming a masking layer on said polycrystalline silicon layer, c. removing partially said masking layer in predetermined areas to provide windows through said masking layer to said polycrystalline layer, d. oxidizing the exposed portions of said polycrystalline silicon layer, and e. removing said oxidized portions below at least two of said windows and forming electrodes on the substrate where the oxidized portions have been removed.
Claim 4
Independent Claim
97 words
A method for the manufacture of a semiconductor device comprising: a. forming a polycrystalline silicon layer containing 2 to 45 atomic percent of oxygen atoms on a semiconductive single crystal substrate, b. forming a masking layer on said polycrystalline silicon layer, c. removing partially said masking layer in predetermined areas to provide windows through said masking layer to said polycrystalline layer, d. oxidizing the exposed portions of said polycrystalline silicon layer, and e. removing said oxidized portions below at least two of said windows and forming electrodes on the substrate where the oxidized portions have been removed.
Claim 5
Independent Claim
134 words
A method for the manufacture of an insulating gate field effect transistor comprising: a. forming at least two regions of a second conductivity type separately on a substrate of a first conductivity type; b. forming a polycrystalline silicon layer containing 2 to 45 atomic percent of oxygen atoms on said substrate; c. forming a masking layer on said polycrystalline silicon layer; d. removing said masking layer above said two regions to provide windows through said masking layer and removing said masking layer above the surface layer between said two regions; e. oxidizing the exposed portions of said polycrystalline silicon layer; f. removing said oxidized layer corresponding to said two regions; and g. forming electrodes to said two regions and on said oxidized portion at least corresponding to said surface layer between said two regions.
Claim 6
Independent Claim
134 words
A method for the manufacture of an insulating gate field effect transistor comprising: a. forming at least two regions of a second conductivity type separately on a substrate of a first conductivity type; b. forming a polycrystalline silicon layer containing 2 to 45 atomic percent of oxygen atoms on said substrate; c. forming a masking layer on said polycrystalline silicon layer; d. removing said masking layer above said two regions to provide windows through said masking layer and removing said masking layer above the surface layer between said two regions; e. oxidizing the exposed portions of said polycrystalline silicon layer; f. removing said oxidized layer corresponding to said two regions; and g. forming electrodes to said two regions and on said oxidized portion at least corresponding to said surface layer between said two regions.
Claim 7
Independent Claim
109 words
A method for the manufacture of a bipolar transistor comprising: a. forming at least one region of the second conductivity type on a substrate of the first conductivity type; b. forming another region of the first conductivity type in said one region; c. forming a polycrystalline silicon layer containing 2 to 45 atomic percent of oxygen atoms on said substrate; d. forming a masking layer on said polycrystalline silicon layer; e. removing said masking layer corresponding to said region and said another region; f. oxidizing the exposed portions of said polycrystalline silicon layer; g. removing said oxidized layers corresponding to said regions; and h. forming electrodes to said regions.
Claim 8
Independent Claim
109 words
A method for the manufacture of a bipolar transistor comprising: a. forming at least one region of the second conductivity type on a substrate of the first conductivity type; b. forming another region of the first conductivity type in said one region; c. forming a polycrystalline silicon layer containing 2 to 45 atomic percent of oxygen atoms on said substrate; d. forming a masking layer on said polycrystalline silicon layer; e. removing said masking layer corresponding to said region and said another region; f. oxidizing the exposed portions of said polycrystalline silicon layer; g. removing said oxidized layers corresponding to said regions; and h. forming electrodes to said regions.
Claim 9
Dependent Claim
25 words
A method according to claim 1, in which said masking layer is a layer of silicon dioxide which is thicker than said polycrystalline silicon layer.
Claim 10
Dependent Claim
25 words
A method according to claim 3, in which said masking layer is a layer of silicon dioxide which is thicker than said polycrystalline silicon layer.
Claim 11
Dependent Claim
25 words
A method according to claim 4, in which said masking layer is a layer of silicon dioxide which is thicker than said polycrystalline silicon layer.
Claim 12
Dependent Claim
24 words
A method according to claim 1, in which said masking layer is a polycrystalline layer containing 10 to 57 atomic percent of nitrogen atoms.
Claim 13
Dependent Claim
24 words
A method according to claim 3, in which said masking layer is a polycrystalline layer containing 10 to 57 atomic percent of nitrogen atoms.
Claim 14
Dependent Claim
24 words
A method according to claim 4, in which said masking layer is a polycrystalline layer containing 10 to 57 atomic percent of nitrogen atoms.
References Cited (Backward Citations)
US4001873A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1981-09-18 | 1982-03-20 | 1982-09-19 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1985-09-18 | 1986-03-20 | 1986-09-19 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1989-09-18 | 1990-03-20 | 1990-09-19 | $7700.00 | Window Closed / Lapsed |