Patent US1547587A successfully refreshed from Google Patents.
Patent US5115294A successfully refreshed from Google Patents.
US5115294A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Optoelectronic integrated circuit
Assignee: Nokia Bell Labs
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Filing: 1991-08-14
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Granted: 1992-05-19
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Expires: 2011-08-14
Abstract
Abstract A new MSM photodetector, including a photoabsorbing layer of ternary or quaternary III-V compound semiconductor material, is disclosed. This new photodetector is significant because it exhibits a relatively small dark current and a correspondingly large signal-to-noise ratio. Moreover, the photodetector is readily integrable with electronic integrated circuits and is relatively easy to fabricate.
Inventors
- 👤 Aasmund S. Sudbo
- 👤 Won-Tien Tsang
- 👤 Long Yang
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 15:18
CPC Classifications
H; H10; H10F; H10F77/00; H10F77/10; H10F77/12; H10F77/124; H10F77/1248; H10F30/00; H10F30/20; H10F30/21; H10F30/22; H10F30/227; H10F30/2275; H10F39/00; H10F39/10; H10F39/103; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/544
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
143 words
A device comprising: a photodetector for 1.3-1.55 micron radiation including a first layer of semiconductor material and first and second spaced metal electrodes overlying said first layer, characterized in that said first layer has a composition which includes In 1-x Ga x As y P 1-y , where 0<y≦1 and ##EQU3## said photodetector also includes a second layer of semiconductor material having a composition which includes InP doped with an acceptor dopant chosen from the group consisting of Fe, Ti, Co and Ta, said second layer being positioned between said electrodes and said first layer, said electrodes contacting a surface of said second layer but not the first layer so that a region of doped InP separates the metal electrodes from the first layer and so that a Schottky barrier is formed between the said electrodes and the surface of the second layer.
Claim 2
Independent Claim
143 words
A device comprising: a photodetector for 1.3-1.55 micron radiation including a first layer of semiconductor material and first and second spaced metal electrodes overlying said first layer, characterized in that said first layer has a composition which includes In 1-x Ga x As y P 1-y , where 0<y≦1 and ##EQU3## said photodetector also includes a second layer of semiconductor material having a composition which includes InP doped with an acceptor dopant chosen from the group consisting of Fe, Ti, Co and Ta, said second layer being positioned between said electrodes and said first layer, said electrodes contacting a surface of said second layer but not the first layer so that a region of doped InP separates the metal electrodes from the first layer and so that a Schottky barrier is formed between the said electrodes and the surface of the second layer.
Claim 3
Dependent Claim
22 words
The device of claim 1, further comprising a transistor overlying said second layer, said transistor being in electrical communication with said photodetector.
Claim 4
Dependent Claim
13 words
The device of claim 2, wherein said transistor is a field effect transistor.
Claim 5
Dependent Claim
86 words
A metal-semiconductor-metal photodetector comprising: a substrate of material having a resistivity in excess of 1 megohm-cm; a photoabsorbing layer of III-V compound semiconductor material disposed on said substrate; a region of indium phosphide formed on the upper surface of the photoabsorbing layer, said indium phosphide doped to a resistivity of at least 1 megohm-cm by acceptor dopants which introduce an energy level in the middle of the indium phosphide bandgap; and a pair of electrodes disposed in spaced apart relationship on said region of indium phosphide.
Claim 6
Dependent Claim
86 words
A metal-semiconductor-metal photodetector comprising: a substrate of material having a resistivity in excess of 1 megohm-cm; a photoabsorbing layer of III-V compound semiconductor material disposed on said substrate; a region of indium phosphide formed on the upper surface of the photoabsorbing layer, said indium phosphide doped to a resistivity of at least 1 megohm-cm by acceptor dopants which introduce an energy level in the middle of the indium phosphide bandgap; and a pair of electrodes disposed in spaced apart relationship on said region of indium phosphide.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-05-19 | 1995-11-18 | 1996-05-19 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-05-19 | 1999-11-18 | 2000-05-19 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-05-19 | 2003-11-18 | 2004-05-19 | $7700.00 | Window Closed / Lapsed |