US4490709A
Expired / Lapsed
US
⏱️ 0.0 years remaining
InP:Fe Photoconducting device
Assignee: United States Department of Energy
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Filing: 1982-12-06
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Granted: 1984-12-25
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Expires: 2002-12-06
Abstract
Abstract A photoconducting device fabricated from Fe-doped, semi-insulating InP crystals exhibits an exponential decay transient with decay time inversely related to Fe concentration. Photoconductive gain as high as 5 is demonstrated in photoconducting devices with AuGe and AuSn contacts. Response times from 150 to 1000 picoseconds can be achieved.
Inventors
- 👤 Robert B. Hammond
- 👤 Nicholas G. Paulter
- 👤 Ronald S. Wagner
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 01:21
CPC Classifications
H; H10; H10F; H10F77/00; H10F77/10; H10F77/12; H10F77/124; H10F77/1243; H10F30/00; H10F30/10; H10F77/20; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/544
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
77 words
A high speed photoconducting device exhibiting photoconductive gain comprising: a wafer of Fe-doped, semi-insulating InP having a bulk resistivity greater than 2×10 7 ohm-cm and Fe concentration in the order of 2×10 15 to 4×10 16 cm -3 ; and a pair of gold alloy contacts evaporated and annealed at a temperature of at least 425° C. on said wafer having a contact separation on the order of 25 microns therebetween for the impingement thereon by photons.
Claim 2
Dependent Claim
77 words
A high speed photoconducting device exhibiting photoconductive gain comprising: a wafer of Fe-doped, semi-insulating InP having a bulk resistivity greater than 2×10 7 ohm-cm and Fe concentration in the order of 2×10 15 to 4×10 16 cm -3 ; and a pair of gold alloy contacts evaporated and annealed at a temperature of at least 425° C. on said wafer having a contact separation on the order of 25 microns therebetween for the impingement thereon by photons.
Claim 3
Dependent Claim
69 words
A photoconducting device comprising: a wafer of Fe-doped, semi-insulating InP having a bulk resistivity greater than 2×10 7 ohm-cm and Fe concentration in the order of 2×10 15 to 4×10 16 cm -3 ; and a pair of AuGe contacts evaporated and annealed at a temperature above 425° C. on said wafer having a contact separation on the order of 25 microns therebetween for the impingement thereon by photons.
Claim 4
Dependent Claim
69 words
A photoconducting device comprising: a wafer of Fe-doped, semi-insulating InP having a bulk resistivity greater than 2×10 7 ohm-cm and Fe concentration in the order of 2×10 15 to 4×10 16 cm -3 ; and a pair of AuGe contacts evaporated and annealed at a temperature above 425° C. on said wafer having a contact separation on the order of 25 microns therebetween for the impingement thereon by photons.
Claim 5
Dependent Claim
69 words
A photoconducting device comprising: a wafer of Fe-doped, semi-insulating InP having a bulk resistivity greater than 2×10 7 ohm-cm and Fe concentration in the order of 2×10 15 to 4×10 16 cm -3 ; and a pair of AuSn contacts evaporated and annealed at a temperature above 425° C. on said wafer having a contact separation on the order of 25 microns therebetween for the impingement thereon by photons.
Claim 6
Dependent Claim
69 words
A photoconducting device comprising: a wafer of Fe-doped, semi-insulating InP having a bulk resistivity greater than 2×10 7 ohm-cm and Fe concentration in the order of 2×10 15 to 4×10 16 cm -3 ; and a pair of AuSn contacts evaporated and annealed at a temperature above 425° C. on said wafer having a contact separation on the order of 25 microns therebetween for the impingement thereon by photons.
References Cited (Backward Citations)
US3928865A
Cited
US3917943A
Cited
US4119840A
Cited
US4158207A
Cited
US4300107A
Cited
US4301362A
Cited
US4347437A
Cited
US4376285A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1987-12-25 | 1988-06-25 | 1988-12-25 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1991-12-25 | 1992-06-25 | 1992-12-25 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1995-12-25 | 1996-06-25 | 1996-12-25 | $7700.00 | Window Closed / Lapsed |