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US4490709A
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US
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InP:Fe Photoconducting device
Assignee: United States Department of Energy
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Filing: 1982-12-06
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Granted: 1984-12-25
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Expires: 2002-12-06
Abstract
Abstract A photoconducting device fabricated from Fe-doped, semi-insulating InP crystals exhibits an exponential decay transient with decay time inversely related to Fe concentration. Photoconductive gain as high as 5 is demonstrated in photoconducting devices with AuGe and AuSn contacts. Response times from 150 to 1000 picoseconds can be achieved.
Inventors
- 👤 Robert B. Hammond
- 👤 Nicholas G. Paulter
- 👤 Ronald S. Wagner
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 10:16
CPC Classifications
H; H10; H10F; H10F77/00; H10F77/10; H10F77/12; H10F77/124; H10F77/1243; H10F30/00; H10F30/10; H10F77/20; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/544
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
77 words
A high speed photoconducting device exhibiting photoconductive gain comprising: a wafer of Fe-doped, semi-insulating InP having a bulk resistivity greater than 2×10 7 ohm-cm and Fe concentration in the order of 2×10 15 to 4×10 16 cm -3 ; and a pair of gold alloy contacts evaporated and annealed at a temperature of at least 425° C. on said wafer having a contact separation on the order of 25 microns therebetween for the impingement thereon by photons.
Claim 2
Dependent Claim
77 words
A high speed photoconducting device exhibiting photoconductive gain comprising: a wafer of Fe-doped, semi-insulating InP having a bulk resistivity greater than 2×10 7 ohm-cm and Fe concentration in the order of 2×10 15 to 4×10 16 cm -3 ; and a pair of gold alloy contacts evaporated and annealed at a temperature of at least 425° C. on said wafer having a contact separation on the order of 25 microns therebetween for the impingement thereon by photons.
Claim 3
Dependent Claim
69 words
A photoconducting device comprising: a wafer of Fe-doped, semi-insulating InP having a bulk resistivity greater than 2×10 7 ohm-cm and Fe concentration in the order of 2×10 15 to 4×10 16 cm -3 ; and a pair of AuGe contacts evaporated and annealed at a temperature above 425° C. on said wafer having a contact separation on the order of 25 microns therebetween for the impingement thereon by photons.
Claim 4
Dependent Claim
69 words
A photoconducting device comprising: a wafer of Fe-doped, semi-insulating InP having a bulk resistivity greater than 2×10 7 ohm-cm and Fe concentration in the order of 2×10 15 to 4×10 16 cm -3 ; and a pair of AuGe contacts evaporated and annealed at a temperature above 425° C. on said wafer having a contact separation on the order of 25 microns therebetween for the impingement thereon by photons.
Claim 5
Dependent Claim
69 words
A photoconducting device comprising: a wafer of Fe-doped, semi-insulating InP having a bulk resistivity greater than 2×10 7 ohm-cm and Fe concentration in the order of 2×10 15 to 4×10 16 cm -3 ; and a pair of AuSn contacts evaporated and annealed at a temperature above 425° C. on said wafer having a contact separation on the order of 25 microns therebetween for the impingement thereon by photons.
Claim 6
Dependent Claim
69 words
A photoconducting device comprising: a wafer of Fe-doped, semi-insulating InP having a bulk resistivity greater than 2×10 7 ohm-cm and Fe concentration in the order of 2×10 15 to 4×10 16 cm -3 ; and a pair of AuSn contacts evaporated and annealed at a temperature above 425° C. on said wafer having a contact separation on the order of 25 microns therebetween for the impingement thereon by photons.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1987-12-25 | 1988-06-25 | 1988-12-25 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1991-12-25 | 1992-06-25 | 1992-12-25 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1995-12-25 | 1996-06-25 | 1996-12-25 | $7700.00 | Window Closed / Lapsed |