US4158207A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Iron-doped indium phosphide semiconductor laser
Assignee: United States Department of the Navy
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Filing: 1978-03-27
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Granted: 1979-06-12
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Expires: 1998-03-27
Abstract
Abstract An iron-doped indium phosphide or gallium arsenide semiconductor laser. Theemiconductor material is doped when formed by uniformly distributing transition metal ions such as iron throughout the semiconductor. The concentration of the iron ions is from about 1×10 15 to about 1×10 18 ions per cubic centimeter, but is limited only by the solubility of iron indium phosphide or gallium arsenide. It has been determined that the greater the concentration of ions, the easier the laser emission is obtained. At liquid helium temperature, the iron-doped semiconductor laser will operate at a wavelength near 3 microns.
Inventors
- 👤 Stephen G. Bishop
- 👤 Bruce D. McCombe
- 👤 Wulf H. Koschel
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 10:56
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/30; H01S5/305; H01S3/00; H01S3/14; H01S3/16; H01S3/1601; H01S3/162; H01S3/1628
Claims Analysis
Total Claims: 22
Claim 1
Independent Claim
54 words
A light-emitting semiconductor device which provides a source of monochromatic, coherent light comprising: a III-V compound semiconductor, a transition metal dopant dispersed uniformly throughout said III-V compound semiconductor, said transition metal dopant allowing excitation of said III-V compound semiconductor to achieve laser action at wavelengths much longer than those not including said metallic dopant.
Claim 2
Dependent Claim
54 words
A light-emitting semiconductor device which provides a source of monochromatic, coherent light comprising: a III-V compound semiconductor, a transition metal dopant dispersed uniformly throughout said III-V compound semiconductor, said transition metal dopant allowing excitation of said III-V compound semiconductor to achieve laser action at wavelengths much longer than those not including said metallic dopant.
Claim 3
Dependent Claim
28 words
A light-emitting semiconductor device as claimed in claim 1 wherein: said transition dopant includes a metal selected from a group consisting of iron, chromium, cobalt, nickel and manganese.
Claim 4
Dependent Claim
14 words
A light-emitting semiconductor device as claimed in claim 1 wherein: said dopant is iron.
Claim 5
Dependent Claim
24 words
A light-emitting semiconductor device as claimed in claim 1, wherein: said III-V compound semiconductor is selected from the group consisting of InP and GaAs.
Claim 6
Dependent Claim
24 words
A light-emitting semiconductor device as claimed in claim 2, wherein: said III-V compound semiconductor is selected from the group consisting of InP and GaAs.
Claim 7
Dependent Claim
16 words
A light-emitting semiconductor device as claimed in claim 2 wherein: said III-V compound semiconductor is InP.
Claim 8
Dependent Claim
16 words
A light-emitting semiconductor device as claimed in claim 2 wherein: said III-V compound semiconductor is GaAs.
Claim 9
Dependent Claim
16 words
A light-emitting semiconductor device as claimed in claim 3 wherein: said III-V compound semiconductor is InP.
Claim 10
Dependent Claim
16 words
A light-emitting semiconductor device as claimed in claim 3 wherein: said III-V compound semiconductor is GaAs.
Claim 11
Dependent Claim
36 words
A light-emitting semiconductor device as claimed in claim 3 wherein: said iron dopant concentration dispersed uniformly throughout said semiconductor is as high as allowed by the solid solubility limit of iron in said semiconductor cubic centimeter.
Claim 12
Dependent Claim
35 words
A light-emitting semiconductor device as claimed in claim 8 wherein: said iron dopant distribution dispersed uniformly said semiconductor is as high as allowed by solid solubility limit of iron in said semiconductor per cubic centimeter.
Claim 13
Dependent Claim
70 words
A light-emitting semiconductor laser which provides an output energy of monochromatic coherent light comprising: a semiconductor material fabricated from a III-V compound semiconductor bulk material, and a transition metal dopant included within said III-V compound semiconductor material as the lasing material, said metal dopant being of the type which lases through the mechanism of intracenter luminescent transitions upon excitation by a suitable type of energy, thereby providing said coherent light.
Claim 14
Dependent Claim
70 words
A light-emitting semiconductor laser which provides an output energy of monochromatic coherent light comprising: a semiconductor material fabricated from a III-V compound semiconductor bulk material, and a transition metal dopant included within said III-V compound semiconductor material as the lasing material, said metal dopant being of the type which lases through the mechanism of intracenter luminescent transitions upon excitation by a suitable type of energy, thereby providing said coherent light.
Claim 15
Dependent Claim
23 words
A light-emitting semiconductor laser as claimed in claim 12 wherein: said metal transition dopant is dispersed uniformly throughout said III-V compound semiconductor material.
Claim 16
Dependent Claim
17 words
A light-emitting semiconductor laser as claimed in claim 12 wherein: said III-V compound bulk material is GaAs.
Claim 17
Dependent Claim
17 words
A light-emitting semiconductor device as claimed in claim 12, wherein: said III-V compound bulk material is InP.
Claim 18
Dependent Claim
15 words
A light-emitting semiconductor laser as claimed in claim 12 wherein: said metal dopant is iron.
Claim 19
Dependent Claim
15 words
A light-emitting semiconductor laser as claimed in claim 14 wherein: said metal dopant is iron.
Claim 20
Dependent Claim
15 words
A light-emitting semiconductor laser as claimed in claim 15 wherein: said metal dopant is iron.
Claim 21
Dependent Claim
28 words
A light-emitting semiconductor laser as claimed in claim 16 wherein: said iron dopant concentration in said semiconductor material is up to 1×10 18 iron ions per cubic centimeter.
Claim 22
Dependent Claim
38 words
A light-emitting semiconductor laser as claimed in claim 12 wherein: said semiconductor material is formed in a hybrid contruction in which a conventional heterostructure III-V semiconductor laser is formed on said transition-metal-doped III-V semiconductor material for excitation thereof.
References Cited (Backward Citations)
US4055815A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1982-06-11 | 1982-12-11 | 1983-06-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1986-06-11 | 1986-12-11 | 1987-06-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1990-06-11 | 1990-12-11 | 1991-06-12 | $7700.00 | Window Closed / Lapsed |