Semiconductor photo-receptor

Abstract

Abstract PURPOSE: To receive waves in a region of long-wave length, by successively forming the first and the second four-element layers InGaAsP onto InP, by making up pn- junction between the first and the second four-element layers or in the first four- element layer, and by using the second four-element layer as a window for receiving light. CONSTITUTION: p-Type In x Ga 1-x As y P 1-y (0<x<1, 0<y<1) 2 as the first four- element layer and n-type In x Ga 1-x As y P 1-y (0<x<1, 0<y<1) 7 as the second four-element layer are successively grown epitaxially on a p-type InP substrate 1, and pn-junction is built up between one portion of the first four-element layer 2 and a residual p-type layer 2a while employing the one portion of the layer 2 as an n- type layer 2b. The second four-element layer 7 side is made use of as a light receiving window. A reception-possible wavelength region is a range of the wavelength of λ 1 ∼λ 2 when wavelength corresponding to a band gap of the first four-element layer 2 is λ 1 and that of the second four-element layer 7 λ 2 , thus allowing reception in a region of the long-wave lengths of 1.0∼1.7μ corresponding to a region not more than 1eV in 300°K. COPYRIGHT: (C)1980,JPO&Japio

Inventors

• 👤 Kenzo Akita
• 👤 Kazuo Nakajima
• 👤 Yutaka Yamaoka

Bibliographic Details