US4390889A
Expired / Lapsed
US
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Photodiode having an InGaAs layer with an adjacent InGaAsP p-n junction
Assignee: AT&T Inc
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Filing: 1980-10-09
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Granted: 1983-06-28
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Expires: 2000-10-09
Abstract
Abstract A photodetector useful between 1.0 and 1.6 microns and having an InGaAs layer with an adjacent InGaAsP p-n junction disposed on the InGaAs layer is described.
Inventors
- 👤 Federico Capasso
- 👤 Albert L. Hutchinson
- 👤 Ralph A. Logan
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 09:31
CPC Classifications
H; H10; H10F; H10F30/00; H10F30/20; H10F30/21; H10F30/24; H10F30/22; H10F30/222
Claims Analysis
Total Claims: 20
Claim 1
Independent Claim
101 words
A photodiode comprising a semiconductor substrate having a first conductivity type, a first lattice matched semiconductor layer disposed on said substrate and having said first conductivity type; a lattice matched p-n junction in a second lattice matched semiconductor disposed on said first semiconductor layer characterized in that said second semiconductor has a bandgap larger than the bandgap of said first semiconductor; said p-n junction is formed by a second semiconductor layer having a first conductivity type and a third semiconductor layer having a second conductivity type; said second semiconductor layer having a dopant concentration less than 10 16 /cm 3 .
Claim 2
Dependent Claim
101 words
A photodiode comprising a semiconductor substrate having a first conductivity type, a first lattice matched semiconductor layer disposed on said substrate and having said first conductivity type; a lattice matched p-n junction in a second lattice matched semiconductor disposed on said first semiconductor layer characterized in that said second semiconductor has a bandgap larger than the bandgap of said first semiconductor; said p-n junction is formed by a second semiconductor layer having a first conductivity type and a third semiconductor layer having a second conductivity type; said second semiconductor layer having a dopant concentration less than 10 16 /cm 3 .
Claim 3
Dependent Claim
26 words
A photodiode as recited in claim 1 in which said semiconductor substrate has a bandgap energy larger than that of the first lattice matched semiconductor layer.
Claim 4
Dependent Claim
18 words
A photodiode as recited in claim 1 or 2 in which said first lattice matched semiconductor comprises InGaAs.
Claim 5
Dependent Claim
13 words
A photodiode as recited in claim 2 in which said substrate comprises InP.
Claim 6
Dependent Claim
14 words
A photodiode as recited in claim 3 in which said second semiconductor comprises InGaAsP.
Claim 7
Dependent Claim
47 words
A photodiode as recited in claim 4 in which said p-n junction is formed by a first InGaAsP layer disposed on said InGaAs layer and having said first conductivity type, and a second InGaAsP layer disposed on said first InGaAsP layer and having a second conductivity type.
Claim 8
Dependent Claim
24 words
A photodiode as recited in claim 5 further comprising an ohmic contact to said substrate and an ohmic contact to said second InGaAsP layer.
Claim 9
Dependent Claim
15 words
A photodiode as recited in claim 6 in which said first conductivity type is n-type.
Claim 10
Dependent Claim
28 words
A photodiode as recited in claim 7 in which said first InGaAsP layer has a donor concentration between 10 15 /cm 3 and 10 16 /cm 3 .
Claim 11
Dependent Claim
85 words
A photodiode comprising a semiconductor substrate having a first conductivity type, a first lattice matched semiconductor layer disposed on said substrate and having said first conductivity type, said first lattice matched semiconductor comprises InGaAs; a lattice matched p-n junction in a second lattice matched semiconductor disposed on said first semiconductor layer characterized in that said second semiconductor has a bandgap larger than the bandgap of said first semiconductor, said semiconductor substrate has a bandgap energy larger than that of the first lattice matched semiconductor layer.
Claim 12
Dependent Claim
85 words
A photodiode comprising a semiconductor substrate having a first conductivity type, a first lattice matched semiconductor layer disposed on said substrate and having said first conductivity type, said first lattice matched semiconductor comprises InGaAs; a lattice matched p-n junction in a second lattice matched semiconductor disposed on said first semiconductor layer characterized in that said second semiconductor has a bandgap larger than the bandgap of said first semiconductor, said semiconductor substrate has a bandgap energy larger than that of the first lattice matched semiconductor layer.
Claim 13
Dependent Claim
13 words
A photodiode as recited in claim 10 in which said substrate comprises InP.
Claim 14
Dependent Claim
14 words
A photodiode as recited in claim 11 in which said second semiconductor comprises InGaAsP.
Claim 15
Dependent Claim
47 words
A photodiode as recited in claim 12 in which said p-n junction is formed by a first InGaAsP layer disposed on said InGaAs layer and having said first conductivity type, and a second InGaAsP layer disposed on said first InGaAsP layer and having a second conductivity type.
Claim 16
Dependent Claim
24 words
A photodiode as recited in claim 13 further comprising an ohmic contact to said substrate and an ohmic contact to said second InGaAsP layer.
Claim 17
Dependent Claim
15 words
A photodiode as recited in claim 14 in which said first conductivity type is n-type.
Claim 18
Dependent Claim
28 words
A photodiode as recited in claim 15 in which said first InGaAsP layer has a donor concentration between 10 15 /cm 3 and 10 16 /cm 3 .
Claim 19
Dependent Claim
16 words
A photodiode as recited in claim 1 in which said first lattice matched semiconductor comprises GaSb.
Claim 20
Dependent Claim
16 words
A photodiode as recited in claim 1 or 17 in which said second semiconductor comprises AlGaAsSb.
References Cited (Backward Citations)
US4231049A
Cited
US4323911A
Cited
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1986-06-27 | 1986-12-27 | 1987-06-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1990-06-27 | 1990-12-27 | 1991-06-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1994-06-27 | 1994-12-27 | 1995-06-28 | $7700.00 | Window Closed / Lapsed |