US5075743A
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Quantum well optical device on silicon
Assignee: Cornell Research Foundation Inc
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Filing: 1989-06-06
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Granted: 1991-12-24
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Expires: 2009-06-06
Abstract
Abstract A semiconductor structure for use in forming optical devices, such as lasers and LEDs, is disclosed. The structure includes a silicon base on which is formed by epitaxial growth, a crystalline material (such as AlGaP) structure or region that is nearly lattice matched to silicon. One or more quantum wells are formed in the crystalline material structure. A quantum well can be made of a direct bandgap material or an indirect bandgap material with isoelectronic centers (IECs). The regions on either side of the quantum wells can be graded to form a graded index separate confinement heterostructure (GRINSCH). To reduce problems of warpage, the crystalline material can be epitaxially grown in windows formed in a layer of silicon nitride or silicon dioxide on the silicon substrate. A multi-color array of optical devices can be provided with this structure.
Inventors
- 👤 Abbas Behfar-Rad
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 12:31
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/40; H01S5/42; H01S5/423; B; B82; B82Y; B82Y20/00; H01S5/30; H01S5/34; H01S5/343; H10; H10H; H10H29/00; H10H29/10; H10H29/14; H10H29/142; H01S5/02; H01S5/0206; H01S5/021; H01S5/3403; H01S5/34326; H10H20/00; H10H20/80; H10H20/81; H10H20/811; H10H20/812
Claims Analysis
Total Claims: 17
Claim 1
Independent Claim
97 words
An optical semiconductor structure comprising: a) a silicon base layer; b) a silicon compound layer formed on said silicon base layer, said silicon compound layer including at least a first window therein; c) at least a first epitaxially grown crystalline structure formed on said silicon base layer in said first window, said crystalline structure being formed from a material that is near lattice matched with said silicon base layer; and, d) at least a first quantum well layer formed in said first crystalline structure which forms a first active light emitting region for said optical semiconductor structure.
Claim 2
Dependent Claim
97 words
An optical semiconductor structure comprising: a) a silicon base layer; b) a silicon compound layer formed on said silicon base layer, said silicon compound layer including at least a first window therein; c) at least a first epitaxially grown crystalline structure formed on said silicon base layer in said first window, said crystalline structure being formed from a material that is near lattice matched with said silicon base layer; and, d) at least a first quantum well layer formed in said first crystalline structure which forms a first active light emitting region for said optical semiconductor structure.
Claim 3
Dependent Claim
86 words
The semiconductor structure of claim 1, further including: e) at least a second window in said silicon compound layer; f) at least a second epitaxially grown crystalline structure formed on said silicon base layer in said second window, said second crystalline structure also being formed from a material that is near lattice matched with said silicon base layer; and g) at least a second quantum well layer formed in said second crystalline structure which forms a second active light emitting region for said optical semiconductor structure.
Claim 4
Dependent Claim
64 words
The semiconductor structure of claim 1, further including at least a third quantum well layer formed in said first crystalline structure, and at least a fourth quantum well layer formed in said second crystalline structure; and wherein, said first and second quantum well layers emit light of a first wavelength, and said third and fourth quantum well layers emit light of a second wavelength.
Claim 5
Dependent Claim
22 words
The semiconductor structure of claim 1, wherein said silicon compound is chosen from the group consisting of silicon dioxide and silicon nitride.
Claim 6
Dependent Claim
91 words
An optical semiconductor structure comprising: a) a silicon base layer; b) an epitaxially grown crystalline structure disposed on said silicon base layer, said crystalline structure being composed of a material which is near lattice matched with said silicon base layer; c) a first quantum well layer formed in said crystalline structure forming an active light emitting region for said optical semiconductor structure; and d) first and second graded index regions on either side of said first quantum well layer in said crystalline structure which forms a graded index separate confinement heterostructure.
Claim 7
Dependent Claim
91 words
An optical semiconductor structure comprising: a) a silicon base layer; b) an epitaxially grown crystalline structure disposed on said silicon base layer, said crystalline structure being composed of a material which is near lattice matched with said silicon base layer; c) a first quantum well layer formed in said crystalline structure forming an active light emitting region for said optical semiconductor structure; and d) first and second graded index regions on either side of said first quantum well layer in said crystalline structure which forms a graded index separate confinement heterostructure.
Claim 8
Dependent Claim
26 words
The optical semiconductor structure of claim 5 wherein said crystalline structure is formed from a material chosen from the group consisting of GaP, ZnS, or AlGaP.
Claim 9
Dependent Claim
18 words
The optical semiconductor structure of claim 5 wherein said quantum well layer is formed from direct bandgap material.
Claim 10
Dependent Claim
17 words
The optical semiconductor structure of claim 7 wherein said quantum well layer is lattice mismatched with silicon.
Claim 11
Dependent Claim
13 words
The structure of claim 5 wherein said optical semiconductor structure is a laser.
Claim 12
Dependent Claim
13 words
The structure of claim 5 wherein said optical semiconductor structure is an LED.
Claim 13
Dependent Claim
106 words
An optical semiconductor structure comprising: a) a silicon base layer; b) an epitaxially grown crystalline structure disposed on said silicon base layer, said crystalline structure being composed of a material that is near lattice matched with said silicon base layer; and, c) at least a first quantum well layer formed in said crystalline structure forming an active light emitting region for said optical semiconductor structure, wherein said quantum well layer is formed from a material that is lattice mismatched with said crystalline structure, and has a thickness less than a critical thickness above which dislocations will form between said quantum well layer and said crystalline structure.
Claim 14
Dependent Claim
106 words
An optical semiconductor structure comprising: a) a silicon base layer; b) an epitaxially grown crystalline structure disposed on said silicon base layer, said crystalline structure being composed of a material that is near lattice matched with said silicon base layer; and, c) at least a first quantum well layer formed in said crystalline structure forming an active light emitting region for said optical semiconductor structure, wherein said quantum well layer is formed from a material that is lattice mismatched with said crystalline structure, and has a thickness less than a critical thickness above which dislocations will form between said quantum well layer and said crystalline structure.
Claim 15
Dependent Claim
18 words
The optical semiconductor structure of claim 11 wherein said quantum well layer is formed from direct bandgap material.
Claim 16
Dependent Claim
32 words
The optical semiconductor structure of claim 12 wherein said crystalline structure is formed from AlGaP, and said quantum well layer is formed from GaAs and is less than approximately 100 angstroms thick.
Claim 17
Dependent Claim
28 words
The optical semiconductor structure of claim 11 wherein said quantum well layer is formed from indirect bandgap material with isoelectronic centers to allow radiative recombinations with reasonable efficiency.
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