US4862470A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor laser device
Assignee: Sharp Corp
•
Filing: 1988-04-27
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Granted: 1989-08-29
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Expires: 2008-04-27
Abstract
Abstract A semiconductor laser device comprising an active layer, optical guiding layers sandwiching the active layer therebetween, and a cladding layer disposed on each of the optical guiding layers, wherein the refractive index of each of the optical guiding layers gradually varies in the direction of the thickness of the optical guiding layer, and the thickness of each of the cladding layers is 0.5 um or less.
Inventors
- 👤 Takahiro Suyama
- 👤 Kosei Takahashi
- 👤 Masafumi Kondo
- 👤 Toshiro Hayakawa
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 14:14
CPC Classifications
B; B82; B82Y; B82Y20/00; H; H01; H01S; H01S5/00; H01S5/30; H01S5/34; H01S5/20; H01S5/2004; H01S5/3409; H01S5/343; H01S5/34313; H01S5/3432
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
68 words
In a semiconductor laser device comprising an active layer, optical guiding layers sandwiching said active layer therebetween, and a cladding layer disposed on each of said optical guiding layers, the device wherein the refractive index of each of said optical guiding layers gradually increases in the direction away from said active layer substantially identically, and the thickness of each of said cladding layers is 0.5 um or less.
Claim 2
Dependent Claim
68 words
In a semiconductor laser device comprising an active layer, optical guiding layers sandwiching said active layer therebetween, and a cladding layer disposed on each of said optical guiding layers, the device wherein the refractive index of each of said optical guiding layers gradually increases in the direction away from said active layer substantially identically, and the thickness of each of said cladding layers is 0.5 um or less.
Claim 3
Dependent Claim
20 words
A semiconductor laser device according to claim 1, wherein said active layer has a thickness of 0.1 μm or less.
Claim 4
Dependent Claim
34 words
A semiconductor laser device according to claim 1, wherein each of said cladding layers is made of Al x Ga 1-x As and the AlAs mole fraction X is set at 0.45 or more.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-08-28 | 1993-02-27 | 1993-08-29 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-08-28 | 1997-02-27 | 1997-08-29 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-08-28 | 2001-02-27 | 2001-08-29 | $7700.00 | Window Closed / Lapsed |