Semiconductor laser

Abstract

Abstract PURPOSE:To improve the high temperature operation characteristic by a method wherein several AlGaAs layers are laminated on an N type GaAs substrate providing a band- like mesa element containing an active layer and several P-N-P-N layers made of AlGaAs with specified thickness are respectively laminated adjoining the sides of the mesa element to be further laminated with a P type AlGaAs layer on the flat top surface. CONSTITUTION:A mesa element comprising an N-Al0.33Ga0.67As layer 2, an N-Al0.35 Ga0.65As layer 3, a P-Al0.05Ga0.95As active layer 4, a P-Al0.4Ga0.6As layer 5 and a P- Al0.01Ga0.95As layer 6 is formed on an N-GaAs substrate 1. Then a P-Al0.35Ga0.65As layer 7, an N-Al0.35Ga0.65As layer 8, a P-Al0.35Ga0.65As layer 13 and an N-Al0.35Ga0.65 As layer 14 are laminated on the sides of the mesa element burying the same while a P-Al0.01Ga0.95As layer 15 is laminated on the flat top surface providing a P-layer 9, ohmic electrodes 11, 12. The layer 7 is slowly grown from a solution with low supersaturation making its surface precisely align with the lower surface of the layer 2 with the surface of layers 8 and 4 also aligned with each other finally the layer 15 is laminated on the flat layers 6 and 14 utilizing a solution with composition of 0<=X<=0.15 subject to high supersaturation. In such a constitution, the laser operation with excellent efficiency at high temperature may be performed making the production thereof easier.

Inventors

• 👤 Takao Furuse
• 👤 古瀬　孝雄

Bibliographic Details