US4841533A
Expired / Lapsed
US
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Semiconductor laser device having a graded index waveguide
Assignee: Sharp Corp
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Filing: 1986-10-17
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Granted: 1989-06-20
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Expires: 2006-10-17
Abstract
Abstract A semiconductor laser device containing a laser oscillation-operating area comprising a superlatticed quantum well region which is composed of layers of GaAs alternating with layers of Al x Ga 1-x As (0<x≦1), where each of the layers has a thickness of several molecular layers or less; optical guiding layers consisting of Al y Ga 1-y As (x≦y≦1) sandwiching the quantum well region, where the AlAs mole fraction varies continuously; and cladding layers covering the optical guiding layers.
Inventors
- 👤 Toshiro Hayakawa
- 👤 Takahiro Suyama
- 👤 Masafumi Kondo
- 👤 Kohsei Takahashi
- 👤 Saburo Yamamoto
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 04:18
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/30; B; B82; B82Y; B82Y20/00; H01S5/34; H01S5/343; H01S5/34313; H01S5/3432
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
99 words
In a semiconductor laser device containing a laser oscillation-operating area, the device wherein said laser oscillation-operating area comprises: a superlatticed quantum well region which is composed of alternate layers consisting of GaAs layers and thin Al x Ga 1-x As (0<x≦1) layers, each of said layers having a thickness of several molecular layers or less, optical guiding layers consisting of Al y Ga 1-y As (x≦y≦1) and sandwiching said superlatticed quantum well region therebetween, the AlAs mole fraction (i.e., y) of each said optical guiding layers being continuously varied, and cladding layers superposed on said optical guiding layers, respectively.
Claim 2
Dependent Claim
99 words
In a semiconductor laser device containing a laser oscillation-operating area, the device wherein said laser oscillation-operating area comprises: a superlatticed quantum well region which is composed of alternate layers consisting of GaAs layers and thin Al x Ga 1-x As (0<x≦1) layers, each of said layers having a thickness of several molecular layers or less, optical guiding layers consisting of Al y Ga 1-y As (x≦y≦1) and sandwiching said superlatticed quantum well region therebetween, the AlAs mole fraction (i.e., y) of each said optical guiding layers being continuously varied, and cladding layers superposed on said optical guiding layers, respectively.
Claim 3
Dependent Claim
32 words
A semiconductor laser device according to claim 1, wherein the whole area of each of said optical guiding layers is constituted by a GRIN region, the AlAs mole fraction of which varies.
Claim 4
Dependent Claim
83 words
A semiconductor laser device according to claim 1, wherein the area of each of said optical guiding layers positioned in the vicinity of the interface between the optical guiding layers and the cladding layers is constituted by a GRIN region, the AlAs mole fraction of which is greatly different and the AlAs mole fraction in the area of each of said optical guiding layers positioned in the vicinity of said quantum well region is the same as that in said quantum well region.
References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-06-19 | 1992-12-19 | 1993-06-20 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-06-19 | 1996-12-19 | 1997-06-20 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-06-19 | 2000-12-19 | 2001-06-20 | $7700.00 | Window Closed / Lapsed |