US4599728A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Multi-quantum well laser emitting at 1.5 μm
Assignee: Nokia Bell Labs
•
Filing: 1983-07-11
•
Granted: 1986-07-08
•
Expires: 2003-07-11
Abstract
Abstract A multi-quantum well laser having a Ga0.47In0.53As/Al0.48In0.52As active region emitting at 1.55 mu m and well layers having a thickness less than 150 Angstroms.
Inventors
- 👤 Kambiz Alavi
- 👤 Alfred Y. Cho
- 👤 Thomas P. Pearsall
- 👤 Henryk Temkin
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 14:11
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/30; H01S5/34; H01S5/343; H01S5/34313; B; B82; B82Y; B82Y20/00; H01S5/34306; H01S5/40; H01S5/4025; H01S5/4031
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
67 words
In a semiconductor heterostructure laser structure comprising first and second wide bandgap confining layers; and an active region between said first and second wide bandgap confining layers, said active region comprising a plurality of well layers comprising at least one semiconductor selected from the group consisting of GaInAs and GaAsSb interleaved with a plurality of barrier layers, said well layers having a thickness less than 150 Angstroms.
Claim 2
Dependent Claim
67 words
In a semiconductor heterostructure laser structure comprising first and second wide bandgap confining layers; and an active region between said first and second wide bandgap confining layers, said active region comprising a plurality of well layers comprising at least one semiconductor selected from the group consisting of GaInAs and GaAsSb interleaved with a plurality of barrier layers, said well layers having a thickness less than 150 Angstroms.
Claim 3
Dependent Claim
27 words
A laser as recited in claim 1 in which said barrier layers comprise at least one semiconductor selected from the group consisting of AlInAs, InP and AlAsSb.
Claim 4
Dependent Claim
20 words
A laser as recited in claim 2 in which said well layers comprise Ga 0 .47 In 0 .53 As.
Claim 5
Dependent Claim
20 words
A laser as recited in claim 3 in which said barrier layers comprise Al 0 .48 In 0 .52 As.
Claim 6
Dependent Claim
20 words
A laser as recited in claim 4 in which said confining layers comprise Al 0 .48 In 0 .52 As.
Claim 7
Dependent Claim
16 words
A laser as recited in claim 5 in which said confining layers have opposite conductivity types.
Claim 8
Dependent Claim
18 words
A plurality of semiconductor lasers as recited in claim 2, said plurality being fabricated on a common substrate.
Claim 9
Dependent Claim
14 words
A plurality as recited in claim 7 in which said well layers comprise GaInAs.
Claim 10
Dependent Claim
21 words
A plurality as recited in claim 8 in which said well layers of said lasers of said plurality have different thicknesses.
Claim 11
Dependent Claim
14 words
A plurality as recited in claim 8 in which said barrier layers comprise AlInAs.
Claim 12
Dependent Claim
21 words
A plurality as recited in claim 10 in which said well layers of said lasers of said plurality have different thicknesses.
Claim 13
Dependent Claim
21 words
A plurality as recited in claim 7 in which said well layers of said lasers of said plurality have different thicknesses.
References Cited (Backward Citations)
US3982207A
Cited
US4503540A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1989-07-07 | 1990-01-06 | 1990-07-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1993-07-07 | 1994-01-06 | 1994-07-08 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1997-07-07 | 1998-01-06 | 1998-07-08 | $7700.00 | Window Closed / Lapsed |