EP0103415B1
Expired / Lapsed
EP
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Light-emitting semiconductor devices and methods of producing the same
Assignee: Fujitsu Ltd
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Filing: 1983-08-12
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Granted: 1989-10-04
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Expires: 2003-08-12
Abstract
No abstract record available.
Inventors
- 👤 Shigenobu Yamakoshi
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-26 09:34
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/81; H10H20/811; H10H20/812; B; B82; B82Y; B82Y20/00; H01; H01S; H01S5/00; H01S5/04; H01S5/042; H01S5/0421; H01S5/0422; H01S5/0424; H01S5/20; H01S5/22; H01S5/2203; H10H20/01; H10H20/011; H10H20/013; H10H20/822; H10H20/824; H01S5/02; H01S5/0206; H01S5/0208
Claims Analysis
Total Claims: 24
Claim 1
Independent Claim
201 words
A light-emitting semiconductor device having a semi-insulating semiconductor substrate (11), comprising: a first clad layer (12) of N-type AIGaAs formed on the semiconductor substrate (11); an N-type laminated active layer (13), formed on said first clad layer, comprising GaAs ultrathin layers and AIGaAs ultrathin layers alternately formed on top of each other, said AIGaAs ultrathin layers having a larger band gap than said GaAs ultrathin layers, each of said ultrathin layers having a thickness which is less than the de Broglie wavelength of an electron wave; a second clad layer (14) of N-type AIGaAs formed on said active layer (13); a P-type region (17) formed by introducing zinc from the top of said second clad layer (14) into a portion of said first clad layer so that a mixture region (17A) of said GaAs and said AIGaAs ultrathin layers, is formed, said mixture region including AIGaAs having an amount of AI less than that of said AIGaAs ultrathin layers and forming a heterojunction with said GaAs ultrathin layers and having a larger band gap than said GaAs ultrathin layers; a first electrode (19) formed on said second clad layer (14); and a second electrode (18) formed on said P-type region (17).
Claim 2
Dependent Claim
201 words
A light-emitting semiconductor device having a semi-insulating semiconductor substrate (11), comprising: a first clad layer (12) of N-type AIGaAs formed on the semiconductor substrate (11); an N-type laminated active layer (13), formed on said first clad layer, comprising GaAs ultrathin layers and AIGaAs ultrathin layers alternately formed on top of each other, said AIGaAs ultrathin layers having a larger band gap than said GaAs ultrathin layers, each of said ultrathin layers having a thickness which is less than the de Broglie wavelength of an electron wave; a second clad layer (14) of N-type AIGaAs formed on said active layer (13); a P-type region (17) formed by introducing zinc from the top of said second clad layer (14) into a portion of said first clad layer so that a mixture region (17A) of said GaAs and said AIGaAs ultrathin layers, is formed, said mixture region including AIGaAs having an amount of AI less than that of said AIGaAs ultrathin layers and forming a heterojunction with said GaAs ultrathin layers and having a larger band gap than said GaAs ultrathin layers; a first electrode (19) formed on said second clad layer (14); and a second electrode (18) formed on said P-type region (17).
Claim 3
Dependent Claim
24 words
A semiconductor device according to claim 1, wherein said first and second clad layers have a band gap larger than said GaAs ultrathin layers.
Claim 4
Dependent Claim
44 words
A semiconductor device according to claim 1, wherein a first cap layer (15) is formed between said first electrode (19) and said second clad layer (14), and a second cap layer (15) is formed between said second electrode (18) and said P-type region (17).
Claim 5
Dependent Claim
173 words
A light-emitting semiconductor device having a semi-insulating semiconductor substrate (61), comprising: a first clad layer (62) of N-type AIGaAs formed on the semiconductor substrate (61); a semiconductor ultrathin layer (63) of N-type GaAs formed on said first clad layer and having a thickness which is less than the de Broglie wavelength of an electron wave; a second clad layer (64) of N-type AIGaAs formed on said GaAs ultrathin layer; a P-type region (67) formed by introducing zinc and extending from above the top of said second clad layer (64) into a portion of said first clad layer and forming a mixture region of said GaAs ultrathin layer and a portion of said first and second clad layers adjacent to said GaAs ultrathin layer and having a larger band gap than said GaAs ultrathin layers and said first and second clad layers having a larger band gap than said GaAs ultrathin layer; a first electrode (69) formed on said second clad layer (64); and a second electrode (68) formed on said P-type region (67).
Claim 6
Dependent Claim
173 words
A light-emitting semiconductor device having a semi-insulating semiconductor substrate (61), comprising: a first clad layer (62) of N-type AIGaAs formed on the semiconductor substrate (61); a semiconductor ultrathin layer (63) of N-type GaAs formed on said first clad layer and having a thickness which is less than the de Broglie wavelength of an electron wave; a second clad layer (64) of N-type AIGaAs formed on said GaAs ultrathin layer; a P-type region (67) formed by introducing zinc and extending from above the top of said second clad layer (64) into a portion of said first clad layer and forming a mixture region of said GaAs ultrathin layer and a portion of said first and second clad layers adjacent to said GaAs ultrathin layer and having a larger band gap than said GaAs ultrathin layers and said first and second clad layers having a larger band gap than said GaAs ultrathin layer; a first electrode (69) formed on said second clad layer (64); and a second electrode (68) formed on said P-type region (67).
Claim 7
Dependent Claim
46 words
A semiconductor device according to claim 4, wherein each of said first and second clad layers (62, 64) comprises two layers (62A, 62B; 64A, 64B), one of said two layers contacting said GaAs ultrathin layer (63) and having a transitional composition in which a component varies.
Claim 8
Dependent Claim
18 words
A semiconductor device according to claim 1, wherein said ultrathin layers have a thickness less than 30 nm.
Claim 9
Dependent Claim
18 words
A semiconductor device according to claim 4, wherein said ultrathin layers have a thickness less than 30 nm.
Claim 10
Dependent Claim
214 words
A light-emitting semiconductor device having an N-type semiconductor substrate (21) having first and second sides, comprising: a first clad layer (22) of N-type AIGaAs formed on the first side of the semiconductor substrate (21); an N-type laminated active layer (23), formed on said first clad layer, comprising GaAs ultrathin layers and AIGaAs ultrathin layers alternately formed on top of each other, said AIGaAs ultrathin layers having a larger band gap than said GaAs ultrathin layers, each of said ultrathin layers havign a thickness which is less than the de Broglie wavelength of an electron wave; a second clad layer (24) of N-type AIGaAs formed on said active layer (23); a P-type region (27) formed by introducing zinc from the top of said second clad layer (24) into a portion of said first clad layer (27) so that a mixture region (27A) of said GaAs and said AIGaAs ultrathin layers is formed, said mixture region including AIGaAs having an amount of AI less than that of said AIGaAs ultrathin layers and forming a heterojunction with said GaAs ultrathin layers and having a larger band gap than said GaAs ultrathin layers; a first electrode (29) formed on the second side of the semiconductor substrate (21); and a second electrode (28) formed on said P-type region (27).
Claim 11
Dependent Claim
214 words
A light-emitting semiconductor device having an N-type semiconductor substrate (21) having first and second sides, comprising: a first clad layer (22) of N-type AIGaAs formed on the first side of the semiconductor substrate (21); an N-type laminated active layer (23), formed on said first clad layer, comprising GaAs ultrathin layers and AIGaAs ultrathin layers alternately formed on top of each other, said AIGaAs ultrathin layers having a larger band gap than said GaAs ultrathin layers, each of said ultrathin layers havign a thickness which is less than the de Broglie wavelength of an electron wave; a second clad layer (24) of N-type AIGaAs formed on said active layer (23); a P-type region (27) formed by introducing zinc from the top of said second clad layer (24) into a portion of said first clad layer (27) so that a mixture region (27A) of said GaAs and said AIGaAs ultrathin layers is formed, said mixture region including AIGaAs having an amount of AI less than that of said AIGaAs ultrathin layers and forming a heterojunction with said GaAs ultrathin layers and having a larger band gap than said GaAs ultrathin layers; a first electrode (29) formed on the second side of the semiconductor substrate (21); and a second electrode (28) formed on said P-type region (27).
Claim 12
Dependent Claim
37 words
A semiconductor device according to claim 8, wherein said laminated active layer (23) and said second clad layer (24) are strip-shaped and wherein said P-type region (27) is located adjacent to both sides of said strip-shaped portion.
Claim 13
Independent Claim
199 words
A method of manufacturing a light-emitting semiconductor device comprising the steps of: forming a first clad layer (12) of a first conductivity type on a semiconductor substrate (11); forming a laminated active layer (13) of the first conductivity type on said first clad layer (12) by alternately placing first semiconductor ultrathin layers and second semiconductor ultrathin layers on top of each other, said second semiconductor ultrathin layers having a larger band gap than said first semiconductor ultrathin layers and each of said first and second semiconductor ultrathin layers having a thickness which is less than the de Broglie wavelength of an electron wave; forming a second clad layer (14) of said first conductivity type on said active layer (13); and selectively doping second conductivity type impurities into a portion of said first clad layer (12) from the surface of said second clad layer (14) to form a region (17) of a second conductivity type, opposite to said first conductivity type, which region comprises a mixture region (17A) of said first and second semiconductor ultrathin layers, said mixture region forming a heterojunction with said first semiconductor ultrathin layers and having a larger band gap than said first semiconductor ultrathin layer.
Claim 14
Independent Claim
199 words
A method of manufacturing a light-emitting semiconductor device comprising the steps of: forming a first clad layer (12) of a first conductivity type on a semiconductor substrate (11); forming a laminated active layer (13) of the first conductivity type on said first clad layer (12) by alternately placing first semiconductor ultrathin layers and second semiconductor ultrathin layers on top of each other, said second semiconductor ultrathin layers having a larger band gap than said first semiconductor ultrathin layers and each of said first and second semiconductor ultrathin layers having a thickness which is less than the de Broglie wavelength of an electron wave; forming a second clad layer (14) of said first conductivity type on said active layer (13); and selectively doping second conductivity type impurities into a portion of said first clad layer (12) from the surface of said second clad layer (14) to form a region (17) of a second conductivity type, opposite to said first conductivity type, which region comprises a mixture region (17A) of said first and second semiconductor ultrathin layers, said mixture region forming a heterojunction with said first semiconductor ultrathin layers and having a larger band gap than said first semiconductor ultrathin layer.
Claim 15
Dependent Claim
24 words
A method according to claim 10, wherein said first conductivity type is an N-type conductivity, and said second conductivity type is a P-type conductivity.
Claim 16
Dependent Claim
28 words
A method according to claim 10 or claim 11, wherein before said doping step is carried out a masking layer is selectively formed on said second clad layer.
Claim 17
Independent Claim
23 words
A method according to any one of claims 10 to 12, wherein said doping step is carried out by a thermal diffusion process.
Claim 18
Independent Claim
23 words
A method according to any one of claims 10 to 12, wherein said doping step is carried out by an ion implantation process.
Claim 19
Independent Claim
20 words
A method according to any one of claims 10 to 14, wherein said semiconductor substrate is a semi-insulating semiconductor substrate.
Claim 20
Dependent Claim
35 words
A method according to claim 10, wherein after said doping step is carried out electrodes are formed on said second clad layer of said first conductivity type and on said second conductivity type region, respectively.
Claim 21
Independent Claim
19 words
A method according to any one of claims 10 to 14, wherein said semiconductor substrate has an N-type conductivity.
Claim 22
Dependent Claim
29 words
A method according to claim 17, wherein after said doping step is carried out electrodes. are formed on said substrate and on said second , conductivity type region, respectively.
Claim 23
Independent Claim
204 words
A method of manufacturing a light-emitting semiconductor device, comprising the steps of: depositing on a semiconductor substrate (61) successive semiconductor layers so as to provide an active layer (63), of one conductivity type, sandwiched between first (62) and second (64) clad layers which are of the said one conductivity type but of larger band gap than the said active layer, and carrying out a selective doping process whereby impurities are introduced into adjacent respective portions of the said active layer and the two clad layers so as to produce in the semiconductor material a region (67) of the opposite conductivity type, thereby providing a P-N junction at the boundary between the said region and the remainder of the said active layer; wherein the said active layer (64) is an ultrathin layer having a thickness which is less than the de Broglie wavelength of an electron wave and material of that layer is caused to become mixed in the said region of opposite conductivity type with material of at least one of the said first and second clad layers so that the mixed material is of larger band gap than the remainder of the said active layer and the resulting P-N junction is a heterojunction.
Claim 24
Independent Claim
204 words
A method of manufacturing a light-emitting semiconductor device, comprising the steps of: depositing on a semiconductor substrate (61) successive semiconductor layers so as to provide an active layer (63), of one conductivity type, sandwiched between first (62) and second (64) clad layers which are of the said one conductivity type but of larger band gap than the said active layer, and carrying out a selective doping process whereby impurities are introduced into adjacent respective portions of the said active layer and the two clad layers so as to produce in the semiconductor material a region (67) of the opposite conductivity type, thereby providing a P-N junction at the boundary between the said region and the remainder of the said active layer; wherein the said active layer (64) is an ultrathin layer having a thickness which is less than the de Broglie wavelength of an electron wave and material of that layer is caused to become mixed in the said region of opposite conductivity type with material of at least one of the said first and second clad layers so that the mixed material is of larger band gap than the remainder of the said active layer and the resulting P-N junction is a heterojunction.
References Cited (Backward Citations)
No citation records indexed.
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