US4684964A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Silicon light emitting device and a method of making the device
Assignee: RCA Corp
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Filing: 1986-12-01
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Granted: 1987-08-04
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Expires: 2006-12-01
Abstract
Abstract A light emitting device comprises a body of silicon having regions of opposite conductivity type and a region about the p-n junction between the regions of opposite conductivity type which contains lattice defects and excess hydrogen. This device emits light at a wavelength between about 1.2 and about 1.3 micrometers. The method of the invention includes the steps of damaging the region about the p-n junction and hydrogenating the damage region.
Inventors
- 👤 Jacques I. Pankove
- 👤 Chung P. Wu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 05:11
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/01; H10H20/011; H10H20/014; H10H20/80; H10H20/81; H10P; H10P95/00; H10P95/94
Claims Analysis
Total Claims: 3
Claim 1
Independent Claim
80 words
A light emitting device comprising: a body of crystalline silicon having first and second regions of opposite conductivity type therein with a p-n junction therebetween; a region about the p-n junction containing lattice defects and hydrogen which region emits light at a wavelength of about 1.25 micrometers; and electrical contacts on the regions of opposite conductivity type at opposite sides of said p-n junction whereby a current can be passed across said junction for achieving electroluminescence at said p-n junction.
Claim 2
Dependent Claim
80 words
A light emitting device comprising: a body of crystalline silicon having first and second regions of opposite conductivity type therein with a p-n junction therebetween; a region about the p-n junction containing lattice defects and hydrogen which region emits light at a wavelength of about 1.25 micrometers; and electrical contacts on the regions of opposite conductivity type at opposite sides of said p-n junction whereby a current can be passed across said junction for achieving electroluminescence at said p-n junction.
Claim 3
Dependent Claim
30 words
A light emitting device according to claim 1 wherein the concentration of hydrogen in the region containing lattice defects is between about 3 atomic percent and about 15 atomic percent.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1990-08-03 | 1991-02-02 | 1991-08-04 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1994-08-03 | 1995-02-02 | 1995-08-04 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1998-08-03 | 1999-02-02 | 1999-08-04 | $7700.00 | Window Closed / Lapsed |