US5025304A
Expired / Lapsed
US
⏱️ 0.0 years remaining
High density semiconductor structure and method of making the same
Assignee: Nortel Networks Ltd
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Filing: 1988-11-29
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Granted: 1991-06-18
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Expires: 2008-11-29
Abstract
Abstract A method of forming a high density semiconductor structure including one or more buried metal layers. One or more metal layers may be formed on a first semiconductor substrate, with the metal layer or layers being insulated from one another and from the substrate. One or more metal layers may be formed on the surface of a second substrate which may or may not be a semiconductor substrate. The topmost metal layers, either or both of which may have an insulating layer thereon, are placed in contact and heated in an oxidizing ambient atmosphere to form a bond therebetween. One or more vias connect the buried metal layers to the active devices in the substrates. The buried metal layers may form buried power and ground planes and buried metallization patterns for device interconnection.
Inventors
- 👤 Arnold Reisman
- 👤 Iwona Turlik
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 09:12
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/032; H10W20/038; H10W20/20; H10P; H10P95/00; H10P95/90; H10W20/052; H10W20/0526; H10W20/071; H10W20/074; H10W20/075; H10W20/093; H10W20/094; H10W20/097
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
86 words
A buried metal layer semiconductor device comprising: a substrate; first and second buried metal layers on said substrate, said first and second buried metal layers having an oxide bond therebetween, said oxide bond being sufficiently thick to form a first buried insulating layer between said first and second buried metal layers, said first buried insulating layer being an oxide of said first buried metal layer; a second buried insulating layer on said second buried metal layer; and, a semiconductor layer on said second buried insulating layer.
Claim 2
Dependent Claim
86 words
A buried metal layer semiconductor device comprising: a substrate; first and second buried metal layers on said substrate, said first and second buried metal layers having an oxide bond therebetween, said oxide bond being sufficiently thick to form a first buried insulating layer between said first and second buried metal layers, said first buried insulating layer being an oxide of said first buried metal layer; a second buried insulating layer on said second buried metal layer; and, a semiconductor layer on said second buried insulating layer.
Claim 3
Dependent Claim
74 words
A buried metal layer semiconductor device comprising: a substrate; first and second buried aluminum layers on said substrate, said first and second buried aluminum layers having an aluminum oxide bond therebetween, said aluminum oxide bond being sufficiently thick to form a first buried insulating layer between said first and second buried aluminum layers; a second buried insulating layer on said second buried aluminum layer; and, a semiconductor layer on said second buried insulating layer.
Claim 4
Dependent Claim
74 words
A buried metal layer semiconductor device comprising: a substrate; first and second buried aluminum layers on said substrate, said first and second buried aluminum layers having an aluminum oxide bond therebetween, said aluminum oxide bond being sufficiently thick to form a first buried insulating layer between said first and second buried aluminum layers; a second buried insulating layer on said second buried aluminum layer; and, a semiconductor layer on said second buried insulating layer.
Claim 5
Dependent Claim
74 words
A buried metal layer semiconductor device comprising: a substrate; first and second buried titanium layers on said substrate, said first and second buried titanium layers having a titanium oxide bond therebetween, said titanium oxide bond being sufficiently thick to form a first buried insulating layer between said first and second buried titanium layers; a second buried insulating layer on said second buried titanium layer; and, a semiconductor layer on said second buried insulating layer.
Claim 6
Dependent Claim
74 words
A buried metal layer semiconductor device comprising: a substrate; first and second buried titanium layers on said substrate, said first and second buried titanium layers having a titanium oxide bond therebetween, said titanium oxide bond being sufficiently thick to form a first buried insulating layer between said first and second buried titanium layers; a second buried insulating layer on said second buried titanium layer; and, a semiconductor layer on said second buried insulating layer.
References Cited (Backward Citations)
US3766445A
Cited
US3725743A
Cited
US4245768A
Cited
US4200474A
Cited
US4288270A
Cited
US4495219A
Cited
US4411962A
Cited
JPS58103149A
Cited
US4481283A
Cited
US4636833A
Cited
JPS6021553A
Cited
US4596604A
Cited
JPS60117690A
Cited
US4704512A
Cited
JPS62145850A
Cited
US4732312A
Cited
JPS63260054A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1994-06-17 | 1994-12-17 | 1995-06-18 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-06-17 | 1998-12-17 | 1999-06-18 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-06-17 | 2002-12-17 | 2003-06-18 | $7700.00 | Window Closed / Lapsed |