A semiconductor substrate with a planar metal pattern and anodized insulating layers
Abstract
Abstract A silicon semiconductor substrate has on its planar surface a planar multilevel metal-insulator pattern that includes at least one layer comprising conducting metal and insulating material. The insulating material is a high purity, non-porous in-situ formed compound of the metal. The pattern is formed by blanketing a predefined, apertured, insulating layer located on the substrate surface with a metal film, forming an oxidation resistant mask over the film in a pattern which mirrors a desired to-be-formed circuit pattern and anodizing the exposed conductive film in an oxidizing ambient, thereby converting the exposed portions of the metal film to an insulating medium, leaving the metal beneath the mask in a desired circuit pattern separated by and/or embedded within the insulating medium.
Inventors
- 👤 J Reuter
- 👤 J Sandhu
Bibliographic Details
Claims Analysis
Total Claims: 0References Cited (Backward Citations)
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