Patent US4964561A successfully refreshed from Google Patents.
Patent US5017510A successfully refreshed from Google Patents.
US5017510A
Expired / Lapsed
US
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Method of making a scalable fuse link element
Assignee: Texas Instruments Inc
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Filing: 1989-05-25
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Granted: 1991-05-21
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Expires: 2009-05-25
Abstract
Abstract A fuse link (50) is formed using a method which offers greater scalability of the general conductor system used to wire the device. An oxide mask (36) having the shape of a desired fuse link is formed over a thin metallization layer (34). A barrier layer (38) is formed over the thin metallization layer (34). A conductive layer (40) is formed over the barrier layer (38). A photoresist mask (42) supplied to the conductive layer (40), and the conductive layer is etched to formed interconnects (44, 46). Subsequently, the barrier layer (38) and thin metallization layer (34) are etched, thus rendering a fuse link (50) between interconnects (44, 46) under the oxide mask (36).
Inventors
- 👤 Michael T. Welch
- 👤 Ronald E. McMann
- 👤 Manuel L. Torreno, Jr.
- 👤 Evaristo Garcia, Jr.
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 17:23
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10W20/49; H10W20/493; Y; Y10; Y10S; Y10S148/00; Y10S148/055
Claims Analysis
Total Claims: 21
Claim 1
Independent Claim
138 words
A method for forming a fuse link between two interconnects, comprising the steps of: forming a first conductive layer; forming a first mask in the shape of a fuse link of desired dimensions on said first conductive layer; forming a second conductive layer over said mask and over portions of said first conductive layer not covered by said mask; forming a third conductive layer over said second layer; forming a second mask over portions of said third conductive layer; removing portions of said second and third conductive layers not covered by said second mask, the interconnects comprising the remaining portions of said third conductive layer; and removing portions of said first conductive layer not covered by said first mask or said second mask, remaining portions of said first conductive layer under said first mask forming the fuse link.
Claim 2
Independent Claim
138 words
A method for forming a fuse link between two interconnects, comprising the steps of: forming a first conductive layer; forming a first mask in the shape of a fuse link of desired dimensions on said first conductive layer; forming a second conductive layer over said mask and over portions of said first conductive layer not covered by said mask; forming a third conductive layer over said second layer; forming a second mask over portions of said third conductive layer; removing portions of said second and third conductive layers not covered by said second mask, the interconnects comprising the remaining portions of said third conductive layer; and removing portions of said first conductive layer not covered by said first mask or said second mask, remaining portions of said first conductive layer under said first mask forming the fuse link.
Claim 3
Dependent Claim
22 words
The method of claim 1 wherein said first conductive layer is thinner than said second conductive layer and comprises a titanium-tungsten material.
Claim 4
Dependent Claim
19 words
The method of claim 1 wherein said first conductive layer has a thickness of between 400 and 500 angstroms.
Claim 5
Dependent Claim
14 words
The method of claim 1 wherein said second conductive layer comprises a titanium-tungsten material.
Claim 6
Dependent Claim
18 words
The method of claim 1 wherein said second conductive layer has a thickness between 1500 and 2000 angstroms.
Claim 7
Dependent Claim
14 words
The method of claim 1 wherein said third conductive layer comprises an aluminum material.
Claim 8
Dependent Claim
14 words
The method of claim 6 wherein said third conductive layer comprises an aluminum-copper alloy.
Claim 9
Dependent Claim
13 words
The method of claim 1 wherein said first mask comprises an insulating material.
Claim 10
Dependent Claim
12 words
The method of claim 8 wherein said insulating material is silicon dioxide.
Claim 11
Dependent Claim
13 words
The method of claim 1 wherein said second mask comprises an photoresistive material.
Claim 12
Dependent Claim
17 words
The method of claim 1 wherein said first, second and third conductive layers are etched in situ.
Claim 13
Dependent Claim
23 words
The method of claim 1 and further comprising the step of forming a doped oxide layer prior to forming said first conductive layer.
Claim 14
Dependent Claim
44 words
The method of claim 12 and further comprising the step of forming a window through said doped oxide layer onto an active device, said first conductive layer being formed upon said doped oxide layer and the portion of said substrate exposed through said window.
Claim 15
Independent Claim
111 words
A method for forming a fuse link between two interconnects, comprising the steps of: forming a first layer of electrically conducting material operable for use in a fuse link; forming a first mask over said first layer, said mask being formed of an electrical isolator; forming a second layer of electrically conducting material over said first layer and said first mask; forming a third layer of electrically conducting material over said second layer; applying a second mask over said third layer; and etching portions of said first, second and third layers not covered by either said first mask or said second mask, thereby forming the fuse link under said first mask.
Claim 16
Independent Claim
111 words
A method for forming a fuse link between two interconnects, comprising the steps of: forming a first layer of electrically conducting material operable for use in a fuse link; forming a first mask over said first layer, said mask being formed of an electrical isolator; forming a second layer of electrically conducting material over said first layer and said first mask; forming a third layer of electrically conducting material over said second layer; applying a second mask over said third layer; and etching portions of said first, second and third layers not covered by either said first mask or said second mask, thereby forming the fuse link under said first mask.
Claim 17
Dependent Claim
11 words
The method of claim 14 wherein said etching comprises dry etching.
Claim 18
Dependent Claim
14 words
The method of claim 14 wherein said first mask is formed of silicon dioxide.
Claim 19
Dependent Claim
21 words
The method of claim 14 wherein said first and second layers are titanium-tungsten and said second layer comprises an aluminum alloy.
Claim 20
Dependent Claim
29 words
The method of claim 14 and further comprising the steps of forming an interconnect on a second level and connecting said second level interconnect to the first level interconnect.
Claim 21
Dependent Claim
18 words
The method of claim 18 wherein said second level interconnect is formed above said above first level interconnects.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1994-05-20 | 1994-11-19 | 1995-05-21 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-05-20 | 1998-11-19 | 1999-05-21 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-05-20 | 2002-11-19 | 2003-05-21 | $7700.00 | Window Closed / Lapsed |