Patent US5013686A successfully refreshed from Google Patents.
US5013686A
Expired / Lapsed
US
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Method of making semiconductor devices having ohmic contact
Assignee: Samsung Electronics Co Ltd
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Filing: 1988-09-30
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Granted: 1991-05-07
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Expires: 2008-09-30
Abstract
Abstract A method being capable of achieving the reduction in contact resistance between each layer when bringing a silicide layer into contact with a polycrystalline-silicon (polysilicon) layer in the manufacture of semiconductor devices. The method comprises the steps of forming a polysilicon layer and a silicide layer thereon over a partial top surface of a semiconductor substrate, forming an insulating layer over said silicide layer and the entire top surface of the substrate, forming a contact window by etching the partial area of the insulating layer over said silicide layer, and forming a polysilicon layer over the entire top surface of the substrate after performing ion-implantation through said contact window, wherein said ion-implantation is performed with N-type high doping into the silicide.
Inventors
- 👤 Kyu-Hyun Choi
- 👤 Heyung-Sub Lee
- 👤 Jung-Hwan Lee
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 20:08
CPC Classifications
H; H10; H10B; H10B10/00; H10B10/15; H10D; H10D1/00; H10D1/40; H10D1/47; H10B10/12; H10D64/00; H10D64/01; H10D64/011; H10D64/0111; H10D64/0113; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/056; Y; Y10; Y10S; Y10S148/00; Y10S148/019; Y10S148/147
Claims Analysis
Total Claims: 20
Claim 1
Independent Claim
98 words
A method of making a semiconductor device having ohmic contact, characterized in that said method comprises the steps of: forming a doped polysilicon layer and then forming a silicide layer thereon over a partial top surface of a semiconductor substrate; forming an insulating layer over said silicide layer and the entire top surface of the substrate; forming a contact window by etching the partial area of the insulating layer over said silicide layer to thereby expose said silicide; and forming a polysilicon layer over the entire top surface of the substrate after performing ion-implantation through said contact window.
Claim 2
Independent Claim
98 words
A method of making a semiconductor device having ohmic contact, characterized in that said method comprises the steps of: forming a doped polysilicon layer and then forming a silicide layer thereon over a partial top surface of a semiconductor substrate; forming an insulating layer over said silicide layer and the entire top surface of the substrate; forming a contact window by etching the partial area of the insulating layer over said silicide layer to thereby expose said silicide; and forming a polysilicon layer over the entire top surface of the substrate after performing ion-implantation through said contact window.
Claim 3
Dependent Claim
19 words
A method according to claim 1, wherein said ion-implantation is performed with N-type high doping into the silicide layer.
Claim 4
Dependent Claim
16 words
The method of claim 2, further comprised of performing said ion-implantation only into the silicide layer.
Claim 5
Dependent Claim
16 words
The method of claim 1, further comprised of performing said ion-implantation only into the silicide layer.
Claim 6
Independent Claim
100 words
A method of making a semiconductor device having ohmic contact, characterized in that said method comprises the steps of: forming a doped polysilicon layer and then forming a silicide layer thereon over the entire top surface of a semi-conductor substrate, and performing ion-implantation thereupon; forming an insulating layer over said silicide layer and the entire top surface of the substrate; forming a contact window by etching a partial area of the insulting layer; and forming a polysilicon layer over the entire top surface of the substrate for making the silicide in contact with the polysilicon layer through said contact window.
Claim 7
Independent Claim
100 words
A method of making a semiconductor device having ohmic contact, characterized in that said method comprises the steps of: forming a doped polysilicon layer and then forming a silicide layer thereon over the entire top surface of a semi-conductor substrate, and performing ion-implantation thereupon; forming an insulating layer over said silicide layer and the entire top surface of the substrate; forming a contact window by etching a partial area of the insulting layer; and forming a polysilicon layer over the entire top surface of the substrate for making the silicide in contact with the polysilicon layer through said contact window.
Claim 8
Dependent Claim
18 words
A method according to claim 5, wherein said ion-implantation is performed with N-type doping into the silicide layer.
Claim 9
Dependent Claim
16 words
The method of claim 6, further comprised of performing said ion-implantation only into the silicide layer.
Claim 10
Dependent Claim
16 words
The method of claim 5, further comprised of performing said ion-implantation only into the silicide layer.
Claim 11
Independent Claim
75 words
A method for making a semiconductor device, comprising the steps of: forming a first polycrystalline silicon layer on one surface of a semiconducting substrate; forming a silicide layer upon the first polycrystalline silicon layer; subjecting said silicide layer to ion-implantation; and forming an ohmic contact by depositing above said silicide layer a second layer of polycrystalline silicon partially lying upon and making electrical contact with a portion of said silicide layer subjected to said ion-implantation.
Claim 12
Independent Claim
75 words
A method for making a semiconductor device, comprising the steps of: forming a first polycrystalline silicon layer on one surface of a semiconducting substrate; forming a silicide layer upon the first polycrystalline silicon layer; subjecting said silicide layer to ion-implantation; and forming an ohmic contact by depositing above said silicide layer a second layer of polycrystalline silicon partially lying upon and making electrical contact with a portion of said silicide layer subjected to said ion-implantation.
Claim 13
Dependent Claim
64 words
The method of claim 9, further comprised of: depositing a layer of an electrically insulating material over said silicide layer and opening a window to said portion of said silicide layer through said layer of insulating material before subjecting said silicide layer to said ion-implantation; and depositing said second layer of polycrystalline silicon within said window during said step of forming said ohmic contact.
Claim 14
Dependent Claim
64 words
The method of claim 9, further comprised of: depositing a layer of an electrically insulating material over said silicide layer and opening a window to said portion of said silicide layer through said layer of insulating material after subjecting said silicide layer to said ion-implantation; and depositing said second layer of polycrystalline silicon within said window during said step of forming said ohmic contact.
Claim 15
Independent Claim
131 words
A method for making a semiconductor device, comprising the steps of: forming a first polycrystalline silicon layer on one surface of a semiconducting substrate; forming a silicide layer upon the first polycrystalline silicon layer; depositing a layer of an electrically insulating material over said silicide layer; depositing a pattern of photoresistive material upon said layer of insulating material; opening a window to said portion of said silicide layer through said layer of insulating material; subjecting said silicide layer to ion-implantation by using said photoresistive material as an ion-implantation mask; removing said photoresistive material; and forming an ohmic contact by depositing above said silicide layer a second layer of polycrystalline silicon partially lying upon and making electrical contact through said window with a portion of said silicide layer subjected to said ion-implantation.
Claim 16
Independent Claim
131 words
A method for making a semiconductor device, comprising the steps of: forming a first polycrystalline silicon layer on one surface of a semiconducting substrate; forming a silicide layer upon the first polycrystalline silicon layer; depositing a layer of an electrically insulating material over said silicide layer; depositing a pattern of photoresistive material upon said layer of insulating material; opening a window to said portion of said silicide layer through said layer of insulating material; subjecting said silicide layer to ion-implantation by using said photoresistive material as an ion-implantation mask; removing said photoresistive material; and forming an ohmic contact by depositing above said silicide layer a second layer of polycrystalline silicon partially lying upon and making electrical contact through said window with a portion of said silicide layer subjected to said ion-implantation.
Claim 17
Dependent Claim
16 words
The method of claim 12, further comprised of performing said ion-implantation only into the silicide layer.
Claim 18
Independent Claim
123 words
A method for making a semiconductor device, comprising the steps of: forming a first polycrystalline silicon layer on one surface of a semiconducting substrate; forming a silicide layer upon the first polycrystalline silicon layer; subjecting said silicide layer to ion-implantation; depositing a layer of an electrically insulating material over said silicide layer; depositing a pattern of a photoresistive material upon said layer of insulating material; opening a window to a portion of said silicide layer through said layer of insulating material; removing said photoresistive material; and forming an ohmic contact by depositing above said silicide layer a second layer of polycrystalline silicon partially lying upon and making electrical contact through said window with a portion of said silicide layer subjected to said ion-implantation.
Claim 19
Independent Claim
123 words
A method for making a semiconductor device, comprising the steps of: forming a first polycrystalline silicon layer on one surface of a semiconducting substrate; forming a silicide layer upon the first polycrystalline silicon layer; subjecting said silicide layer to ion-implantation; depositing a layer of an electrically insulating material over said silicide layer; depositing a pattern of a photoresistive material upon said layer of insulating material; opening a window to a portion of said silicide layer through said layer of insulating material; removing said photoresistive material; and forming an ohmic contact by depositing above said silicide layer a second layer of polycrystalline silicon partially lying upon and making electrical contact through said window with a portion of said silicide layer subjected to said ion-implantation.
Claim 20
Dependent Claim
16 words
The method of claim 14, further comprised of performing said ion-implantation only into the silicide layer.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1994-05-06 | 1994-11-05 | 1995-05-07 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-05-06 | 1998-11-05 | 1999-05-07 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-05-06 | 2002-11-05 | 2003-05-07 | $7700.00 | Window Closed / Lapsed |