US4962059A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Process for forming electrodes for semiconductor devices using focused ion beam deposition
Assignee: Mitsubishi Electric Corp
•
Filing: 1989-04-14
•
Granted: 1990-10-09
•
Expires: 2009-04-14
Abstract
Abstract A process for forming electrodes for semiconductor devices having a semiconductor substrate and an electrically conductive portion covered and protected by an electrically insulating coating. The process includes the steps of forming an electrically conductive film on the electrically insulating coating, forming an electrode to be connected to an external circuit on the electrically conductive film at a position overlying the electrically conductive portion by exposing portions of the electrically insulating coating and the first electrically conductive film to a converged ion beam, electrically connecting the electrode to the exposed portions of the electrically conductive film, and removing the portions of the electrically conductive film not covered by the electrode. As a result, the likelihood of breakdown of the internal circuit of the semiconductor device connected to the electrically conductive portion while the electrode is being formed is greatly reduced.
Inventors
- 👤 Tadashi Nishioka
- 👤 Yoji Mashiko
- 👤 Hiroaki Morimoto
- 👤 Hiroshi Koyama
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 06:49
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/056; Y; Y10; Y10S; Y10S148/00; Y10S148/02; Y10S148/05; Y10S148/131; Y10S148/158
Claims Analysis
Total Claims: 66
Claim 1
Independent Claim
212 words
A process for forming electrodes for semiconductor devices having a semiconductor substrate and an electrically conductive portion covered and protected by an electrically insulating coating, said process comprising: a first step of forming an electrically conductive film on said electrically insulating coating, said electrically conductive film extending from a given position on said electrically insulating coating having the same potential as that at the semiconductor substrate to a position overlying the electrically conductive portion at which said electrode is to be formed a second step of forming an electrode for connection to an external circuit on a portion of said electrically conductive film overlying said electrically insulating coating, said portion corresponding to a desired position on said electrically conductive portion; a third step of partially removing said electrode, said electrically conductive film, and said electrically insulating coating to expose a part of said electrically conductive portion on said semiconductor substrate; a fourth step of electrically connecting said electrode and said part of said electrically conductive portion which is exposed in said third step by exposing the exposed part of the electrically conductive portion to an ion beam; and a fifth step of disconnecting said electrode from said given position on the substrate by removing a portion of the extended electrically conductive film.
Claim 2
Dependent Claim
212 words
A process for forming electrodes for semiconductor devices having a semiconductor substrate and an electrically conductive portion covered and protected by an electrically insulating coating, said process comprising: a first step of forming an electrically conductive film on said electrically insulating coating, said electrically conductive film extending from a given position on said electrically insulating coating having the same potential as that at the semiconductor substrate to a position overlying the electrically conductive portion at which said electrode is to be formed a second step of forming an electrode for connection to an external circuit on a portion of said electrically conductive film overlying said electrically insulating coating, said portion corresponding to a desired position on said electrically conductive portion; a third step of partially removing said electrode, said electrically conductive film, and said electrically insulating coating to expose a part of said electrically conductive portion on said semiconductor substrate; a fourth step of electrically connecting said electrode and said part of said electrically conductive portion which is exposed in said third step by exposing the exposed part of the electrically conductive portion to an ion beam; and a fifth step of disconnecting said electrode from said given position on the substrate by removing a portion of the extended electrically conductive film.
Claim 3
Dependent Claim
60 words
The process according to claim 1, wherein said fourth step includes irradiating a converged ion beam onto the portion of said electrically insulating coating at which said electrode is formed to bore a hole through said electrically conductive layer and said electrically insulating coating until said electrically conductive portion is reached, thereby exposing a part of said electrically conductive portion.
Claim 4
Dependent Claim
35 words
The process according to claim 1, wherein said fourth step involves the formation of an electrically conductive film between said electrode and said exposed part of said electrically conductive portion in providing electrical connection therebetween.
Claim 5
Dependent Claim
58 words
The process according to claim 3, wherein said fourth step includes re-irradiating the vicinity of said hole bored by the converged ion beam with said converged ion beam while supplying a gaseous or vaporized metal compound of the type which is decomposed to produce metal through irradiation of said converged ion beam, thereby forming said electrically conductive film.
Claim 6
Dependent Claim
19 words
The process according to claim 1, wherein said electrically conductive layer is a line-shaped form of electrically conductive film.
Claim 7
Dependent Claim
19 words
The process according to claim 1, wherein said electrically conductive layer is a band-shaped form of electrically conductive film.
Claim 8
Dependent Claim
19 words
The process according to claim 1, wherein said electrically conductive layer is a planar form of electrically conductive film.
Claim 9
Dependent Claim
38 words
The process according to claim 1, wherein said fourth step includes cutting said electrically conductive layer thereby disconnecting the electrical connection between said electrode and said position which is at the same potential as that of said substrate.
Claim 10
Dependent Claim
38 words
The process according to claim 5, wherein said fourth step includes cutting said electrically conductive layer thereby disconnecting the electrical connection between said electrode and said position which is at the same potential as that of said substrate.
Claim 11
Dependent Claim
38 words
The process according to claim 6, wherein said fourth step includes cutting said electrically conductive layer thereby disconnecting the electrical connection between said electrode and said position which is at the same potential as that of said substrate.
Claim 12
Dependent Claim
22 words
The process according to claim 8, wherein said fourth step utilizes the irradiation of energy rays in cutting said electrically conductive layer.
Claim 13
Dependent Claim
17 words
The process according to claim 11, wherein a converged ion beam is used as said energy rays.
Claim 14
Dependent Claim
16 words
The process according to claim 11, wherein a laser beam is used as said energy rays.
Claim 15
Dependent Claim
22 words
The process according to claim 9, wherein said fourth step utilizes the irradiation of energy rays in cutting said electrically conductive layer.
Claim 16
Dependent Claim
17 words
The process according to claim 13, wherein a converged ion beam is used as said energy rays.
Claim 17
Dependent Claim
16 words
The process according to claim 14, wherein a laser beam is used as said energy rays.
Claim 18
Dependent Claim
22 words
The process according to claim 10, wherein said fourth step utilizes the irradiation of energy rays in cutting said electrically conductive layer.
Claim 19
Dependent Claim
17 words
The process according to claim 17, wherein a converged ion beam is used as said energy rays.
Claim 20
Dependent Claim
16 words
The process according to claim 17, wherein a laser beam is used as said energy rays.
Claim 21
Dependent Claim
18 words
The process according to claim 8, wherein said fourth step utilizes erosion in cutting said electrically conductive layer.
Claim 22
Dependent Claim
14 words
The process according to claim 20, wherein said erosion is effected by chemical etching.
Claim 23
Dependent Claim
14 words
The process according to claim 20, wherein said erosion is effected by plasma etching.
Claim 24
Dependent Claim
18 words
The process according to claim 9, wherein said fourth step utilizes erosion in cutting said electrically conductive layer.
Claim 25
Dependent Claim
14 words
The process according to claim 23, wherein said erosion is effected by chemical etching.
Claim 26
Dependent Claim
14 words
The process according to claim 23, wherein said erosion is effected by plasma etching.
Claim 27
Dependent Claim
18 words
The process according to claim 10, wherein said fourth step utilizes corrosion in cutting said electrically conductive layer.
Claim 28
Dependent Claim
14 words
The process according to claim 26, wherein said erosion is effected by chemical etching.
Claim 29
Dependent Claim
14 words
The process according to claim 26, wherein said erosion is effected by plasma etching.
Claim 30
Dependent Claim
50 words
The process according to claim 4, wherein said fourth step involves the removal of the part of said electrically conductive layer which is not covered by said electrode when disconnecting the electrical connection between said electrode and said position which is at the same potential as that of said substrate.
Claim 31
Dependent Claim
32 words
The process according to claim 29, wherein said fourth step involves the irradiation of energy rays in removing the part of said electrically conductive layer which is not covered by said electrode.
Claim 32
Dependent Claim
17 words
The process according to claim 30, wherein a converged ion beam is used as said energy rays.
Claim 33
Dependent Claim
16 words
The process according to claim 30, wherein a layer beam is used as said energy rays.
Claim 34
Dependent Claim
28 words
The process according to claim 29, wherein said fourth step utilizes corrosion in removing the part of said electrically conductive layer which is not covered by said electrode.
Claim 35
Dependent Claim
29 words
The process according to claim 33, wherein said erosion is effected by etching means of the type that erodes said electrically conductive layer but does not erode said electrode.
Claim 36
Dependent Claim
13 words
The process according to claim 34, wherein said etching means is chemical etching.
Claim 37
Dependent Claim
16 words
The process according to claim 34, wherein said etching means is plasma etching employing etching gas.
Claim 38
Dependent Claim
19 words
The process according to claim 35, wherein said etching gas is a mixed gas including carbon tetrafluoride and oxygen.
Claim 39
Dependent Claim
50 words
The process according to claim 5, wherein said fourth step involves the removal of the part of said electrically conductive layer which is not covered by said electrode when disconnecting the electrical connection between said electrode and said position which is at the same potential as that of said substrate.
Claim 40
Dependent Claim
32 words
The process according to claim 38, wherein said fourth step utilizes the irradiation of energy rays in removing the portion of said electrically conductive layer which is not covered by said electrode.
Claim 41
Dependent Claim
17 words
The process according to claim 34, wherein a converged ion beam is used as said energy rays.
Claim 42
Dependent Claim
16 words
The process according to claim 39, wherein a laser beam is used as said energy rays.
Claim 43
Dependent Claim
28 words
The process according to claim 38, wherein said fourth step utilizes erosion in removing the portion of said electrically conductive layer which is not covered by said electrode.
Claim 44
Dependent Claim
29 words
The process according to claim 42, wherein said erosion is effected by etching means of the type that erodes said electrically conductive layer but does not erode said electrode.
Claim 45
Dependent Claim
13 words
The process according to claim 43, wherein said etching means is chemical etching.
Claim 46
Dependent Claim
16 words
The process according to claim 43, wherein said etching means is plasma etching employing etching gas.
Claim 47
Dependent Claim
19 words
The process according to claim 45, wherein said etching gas is a mixed gas including carbon tetrafluoride and oxygen.
Claim 48
Dependent Claim
50 words
The process according to claim 6, wherein said fourth step involves the removal of the part of said electrically conductive layer which is not covered by said electrode when disconnecting the electrical connection between said electrode and said position which is at the same potential as that of said substrate.
Claim 49
Dependent Claim
32 words
The process according to claim 47, wherein said fourth step utilizes the irradiation of energy rays in removing the portion of said electrically conductive layer which is not covered by said electrode.
Claim 50
Dependent Claim
17 words
The process according to claim 48, wherein a converged ion beam is used as said energy rays.
Claim 51
Dependent Claim
16 words
The process according to claim 48, wherein a laser beam is used as said energy rays.
Claim 52
Dependent Claim
28 words
The process according to claim 47, wherein said fourth step utilizes erosion in removing the portion of said electrically conductive layer which is not covered by said electrode.
Claim 53
Dependent Claim
29 words
The process according to claim 51, wherein said erosion is effected by etching means of the type that erodes said electrically conductive layer but does not erode said electrode.
Claim 54
Dependent Claim
13 words
The process according to claim 52, wherein said etching means is chemical etching.
Claim 55
Dependent Claim
16 words
The process according to claim 53, wherein said etching means is plasma etching employing etching gas.
Claim 56
Dependent Claim
19 words
The process according to claim 54, wherein said etching gas is a mixed gas including carbon tetrafluoride and oxygen.
Claim 57
Dependent Claim
26 words
The process according to claim 1, wherein said position which is at the same potential as that of said semiconductor substrate is said electrically conductive portion.
Claim 58
Dependent Claim
25 words
The process according to claim 1, wherein said position which is at the same potential as that of said semiconductor substrate is said semiconductor substrate.
Claim 59
Dependent Claim
13 words
The process according to claim 3, wherein said metal compound is tungsten carbonyl.
Claim 60
Dependent Claim
13 words
The process according to claim 3, wherein said metal compound is molybdenum carbonyl.
Claim 61
Dependent Claim
27 words
The process according to claim 1, wherein said electrically insulating coating is selected from the group consisting of silicon oxide film, phosphosilicate glass and silicon nitride film.
Claim 62
Dependent Claim
16 words
The process according to claim 1, wherein said electrically conductive layer is formed by vapor deposition.
Claim 63
Dependent Claim
15 words
The process according to claim 1, wherein said electrically conductive layer is formed by sputtering.
Claim 64
Dependent Claim
15 words
The process according to claim 62, wherein said electrically conductive layer is made of gold.
Claim 65
Dependent Claim
17 words
The process according to claim 1, wherein said electrically conductive portion is a layer serving as wiring.
Claim 66
Dependent Claim
15 words
The process according to claim 61 wherein said electrically conductive layer is made of gold.
References Cited (Backward Citations)
US3769108A
Cited
US4184909A
Cited
US4355456A
Cited
US4361599A
Cited
US4481283A
Cited
US4525922A
Cited
US4619840A
Cited
US4523372A
Cited
US4707717A
Cited
US4685030A
Cited
US4653428A
Cited
JPH061285A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1993-10-08 | 1994-04-09 | 1994-10-09 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-10-08 | 1998-04-09 | 1998-10-09 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-10-08 | 2002-04-09 | 2002-10-09 | $7700.00 | Window Closed / Lapsed |