US4685030A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Surface mounted circuits including hybrid circuits, having CVD interconnects, and method of preparing the circuits
Assignee: Energy Conversion Devices Inc
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Filing: 1985-04-29
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Granted: 1987-08-04
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Expires: 2005-04-29
Abstract
Abstract A surface mounted circuit is disclosed. The circuit includes an insulating substrate, a chemical vapor deposited interconnect layer of conductive metal, as Cr, Fe, Co, Ni, W, Mo, Mn or mixtures thereof, and at least one circuit element. The surface mounted circuit includes an interfacial layer of W, Mo, Mn, or a mixtures thereof, chemical vapor deposition of an interconnect layer of Cr, Fe, Ni, Co, Mn, W, Mo, or mixtures thereof, and bonding of a circuit element atop the interconnect layer. Also disclosed is a support, adapted for use as a circuit board for a surface mounted circuit.
Inventors
- 👤 Jaime Reyes
- 👤 David Allred
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 20:17
CPC Classifications
H; H05; H05K; H05K3/00; H05K3/10; H05K3/14; H05K3/146; C; C23; C23C; C23C16/00; C23C16/02; C23C16/0272; C23C16/0281; H10; H10W; H10W70/00; H10W70/01; H10W70/05; H10W90/00
Claims Analysis
Total Claims: 19
Claim 1
Independent Claim
92 words
A method of forming a surface mounted circuit on an insulating substrate comprising the steps of: (a) chemical vapor depositing an interfacial layer on the insulating substrate; said interfacial layer formed of a metal chosen from the group consisting of tungsten, molybdenum, manganese, and mixtures, thereof; (b) thereafter chemical vapor depositing an interconnect layer atop the interfacial layer; said interconnect layer being formed of a metal chosen from the group consisting of manganese, chromium, iron, cobalt, nickel, molybdenum, tungsten, and mixtures thereof; and (c) bonding a circuit element atop the interconnect layer.
Claim 2
Independent Claim
92 words
A method of forming a surface mounted circuit on an insulating substrate comprising the steps of: (a) chemical vapor depositing an interfacial layer on the insulating substrate; said interfacial layer formed of a metal chosen from the group consisting of tungsten, molybdenum, manganese, and mixtures, thereof; (b) thereafter chemical vapor depositing an interconnect layer atop the interfacial layer; said interconnect layer being formed of a metal chosen from the group consisting of manganese, chromium, iron, cobalt, nickel, molybdenum, tungsten, and mixtures thereof; and (c) bonding a circuit element atop the interconnect layer.
Claim 3
Dependent Claim
28 words
The method of claim 1 comprising forming the interfacial layer by chemical vapor depositing a metal chosen from the group consisting of tungsten, molybdenum, manganese, and mixtures thereof.
Claim 4
Dependent Claim
24 words
The method of claim 2 comprising chemical vapor depositing the interfacial layer to a thickness of from about 100 angstroms to about 1 micron.
Claim 5
Dependent Claim
44 words
The method of claim 1 comprising forming an interfacial layer on the substrate and forming the interconnect layer atop the interfacial layer by chemical vapor depositing a metal chosen from the group consisting of manganese, chromium, iron, cobalt, nickel, molybdenum, tungsten, and mixtures thereof.
Claim 6
Dependent Claim
22 words
The method of claim 4 comprising chemical vapor depositing the interconnect layer to a thickness of about 1000 angstroms to 10 microns.
Claim 7
Dependent Claim
21 words
The method of claim 1 comprising sequentially depositing the interfacial layer and the interconnect layer in a single vacuum pumping cycle.
Claim 8
Dependent Claim
14 words
The method of claim 1 comprising depositing the interconnect layer from a gaseous carbonyl.
Claim 9
Dependent Claim
25 words
The method of claim 7 wherein the gaseous carbonyl is chosen from the group consisting of Ni(CO) 4 , Co(CO) 3 NO, and mixtures thereof.
Claim 10
Dependent Claim
20 words
The method of claim 7 comprising maintaining the substrate at a temperature of from about 45° C. to about 400°.
Claim 11
Dependent Claim
102 words
A surface mounted circuit comprising: a. an insulating substrate; b. a chemical vapor depositied interfacial layer formed of a metal chosen from the group consisting of tungsten, molybdenum, manganese, and mixtures thereof on the substrate; c. at least one circuit element on said substrate; and d. adherent, chemical vapor deposited interconnect means in contact with the interfacial layer and the circuit element, providing an electrical connection for the circuit element and bonding the circuit element to the substrate; said interconnect means being formed of a metal chosen from the group consisting of manganese, chromium, iron, cobalt, nickel, tungsten, molybdenum, and mixtures thereof.
Claim 12
Dependent Claim
102 words
A surface mounted circuit comprising: a. an insulating substrate; b. a chemical vapor depositied interfacial layer formed of a metal chosen from the group consisting of tungsten, molybdenum, manganese, and mixtures thereof on the substrate; c. at least one circuit element on said substrate; and d. adherent, chemical vapor deposited interconnect means in contact with the interfacial layer and the circuit element, providing an electrical connection for the circuit element and bonding the circuit element to the substrate; said interconnect means being formed of a metal chosen from the group consisting of manganese, chromium, iron, cobalt, nickel, tungsten, molybdenum, and mixtures thereof.
Claim 13
Dependent Claim
20 words
The surface mounted circuit of claim 10 wherein the interfacial layer is from about 100 angstroms to about 1 micron.
Claim 14
Dependent Claim
15 words
The surface mounted circuit of claim 10 wherein the interconnect means are external circuit leads.
Claim 15
Dependent Claim
20 words
The surface mounted circuit of claim 10 wherein the circuit is a hybrid circuit having more than one circuit element.
Claim 16
Dependent Claim
14 words
The surface mounted circuit of claim 13 wherein the interconnect means interconnect circuit elements.
Claim 17
Dependent Claim
13 words
The surface mounted circuit of claim 14 wherein the interconnect means are patterned.
Claim 18
Dependent Claim
70 words
A support adapted for use as a circuit board and comprising: a. an insulating substrate; b. an interfacial film thereon comprising a chemical vapor deposited metal chosen from the group consisting of a molybdenum, tungsten, manganese, and mixtures thereof; and c. an interconnect layer atop the interfacial film comprising a chemical vapor deposited metal chosen from the group consisting of manganese, chromium, iron, cobalt, nickel, molybdenum, tungsten, and mixtures thereof.
Claim 19
Dependent Claim
70 words
A support adapted for use as a circuit board and comprising: a. an insulating substrate; b. an interfacial film thereon comprising a chemical vapor deposited metal chosen from the group consisting of a molybdenum, tungsten, manganese, and mixtures thereof; and c. an interconnect layer atop the interfacial film comprising a chemical vapor deposited metal chosen from the group consisting of manganese, chromium, iron, cobalt, nickel, molybdenum, tungsten, and mixtures thereof.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1990-08-03 | 1991-02-02 | 1991-08-04 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1994-08-03 | 1995-02-02 | 1995-08-04 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1998-08-03 | 1999-02-02 | 1999-08-04 | $7700.00 | Window Closed / Lapsed |