Patent US4930105A successfully refreshed from Google Patents.
US4930105A
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US
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Nonvolatile semiconductor memory device with a double gate structure
Assignee: Toshiba Corp
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Filing: 1988-04-07
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Granted: 1990-05-29
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Expires: 2008-04-07
Abstract
Abstract A memory cell of a nonvolatile semiconductor memory device includes a P conductive type semiconductor substrate, first and second diffusion layers of an N conductivity type, formed in the substrate, a channel region formed in the surface region of the substrate, and which is located between the first and second diffusion layers, a floating gate electrode formed on the channel region, and a control gate electrode formed on the floating gate electrode. The memory cell further includes a third diffusion layer of the N conductivity type, and formed between the first layer and the channel region, the third layer having an impurity concentration lower than that of the first layer.
Inventors
- 👤 Osamu Matsumoto
- 👤 Tadashi Maruyama
- 👤 Hiroyoshi Murata
- 👤 Isao Abe
- 👤 Tomohisa Shigematsu
- 👤 Kazuyoshi Shinada
- 👤 Yasoji Suzuki
- 👤 Ichiro Kobayashi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 20:30
CPC Classifications
G; G11; G11C; G11C16/00; G11C16/02; G11C16/04; G11C16/0408; G11C16/0416; G11C16/0425; G11C16/06; G11C16/10; G11C16/12; G11C16/26; H; H10; H10D; H10D30/00; H10D30/60; H10D30/68
Claims Analysis
Total Claims: 18
Claim 1
Independent Claim
142 words
A nonvolatile semiconductor memory device comprising: a memory cell including a first conductivity type semiconductor substrate, first and second diffusion layers of a second conductivity type formed in said substrate, a channel region formed in the surface region of said substrate and located between said first and second diffusion layers, a floating gate electrode formed on said channel region, a control gate electrode formed on said floating gate electrode, and means for lessening an electric field concentration only between said first layer and said channel region; a control gate line for supplying predetermined voltages to said control gate electrode, in a read mode and in a write mode; a read line connected to said first diffusion layer, for reading out data from said memory cell; and a write line connected to said second diffusion layer, for writing data into said memory cell.
Claim 2
Dependent Claim
142 words
A nonvolatile semiconductor memory device comprising: a memory cell including a first conductivity type semiconductor substrate, first and second diffusion layers of a second conductivity type formed in said substrate, a channel region formed in the surface region of said substrate and located between said first and second diffusion layers, a floating gate electrode formed on said channel region, a control gate electrode formed on said floating gate electrode, and means for lessening an electric field concentration only between said first layer and said channel region; a control gate line for supplying predetermined voltages to said control gate electrode, in a read mode and in a write mode; a read line connected to said first diffusion layer, for reading out data from said memory cell; and a write line connected to said second diffusion layer, for writing data into said memory cell.
Claim 3
Dependent Claim
112 words
The memory device according to claim 1, in which said write line supplies a first voltage to said second diffusion layer, in the write mode, and a second voltage, lower than said first voltage, to said second diffusion layer, in the read mode, said control gate line supplies said first voltage to said control gate electrode in the write mode, and a third voltage, lower than said first voltage but higher than said second voltage, to said control gate electrode, in the read mode, and said read line supplies said second voltage to said first diffusion layer, in the write mode, and said third voltage to the same, in the read mode.
Claim 4
Dependent Claim
54 words
The memory device according to claim 1, in which said means for lessening an electric field concentration includes a third diffusion layer of the second conductivity type, at a lower impurity concentration than that of said first diffusion layer, said third diffusion layer being formed between said first diffusion layer and said channel region.
Claim 5
Dependent Claim
48 words
The memory device according to claim 1, in which said means for lessening an electric field concentration includes a third diffusion layer of the second conductivity type, at a lower impurity concentration than that of said first diffusion layer, said fourth diffusion layer surrounding said first diffusion layer.
Claim 6
Dependent Claim
47 words
The memory device according to claim 2, further comprising a load circuit and a sense amplifier circuit, and in which said read line is connected to a power source via said load circuit, and a signal on said read line is supplied to said sense amplifier circuit.
Claim 7
Dependent Claim
24 words
The memory device according to claim 5, in which said load circuit includes a MOS transistor which is conductive only in the read mode.
Claim 8
Dependent Claim
26 words
The memory device according to claim 5, in which said load circuit includes a MOS transistor having a conduction which is controlled by a clock signal.
Claim 9
Dependent Claim
17 words
The memory device according to claim 5, in which said sense amplifier circuit includes an inverter circuit.
Claim 10
Dependent Claim
154 words
A nonvolatile semiconductor memory device comprising: a memory cell including a first conductivity type semiconductor substrate, first and second diffusion layers of a second conductivity type formed in said substrate, a channel region formed in the surface region of said substrate and located between said first and second diffusion layers, a floating gate electrode formed on said channel region, a control gate electrode formed on said floating gate electrode, and carrier injection-preventing means for preventing the carriers generated in the vicinity of said first diffusion layer in said channel region from being injected into said floating gate electrode; a control gate line for supplying predetermined voltages to said control gate electrode, in a read mode and in a write mode; a read line connected to said first diffusion layer, for reading out data from said memory cell; and a write line connected to said second diffusion layer, for writing data into said memory cell.
Claim 11
Dependent Claim
154 words
A nonvolatile semiconductor memory device comprising: a memory cell including a first conductivity type semiconductor substrate, first and second diffusion layers of a second conductivity type formed in said substrate, a channel region formed in the surface region of said substrate and located between said first and second diffusion layers, a floating gate electrode formed on said channel region, a control gate electrode formed on said floating gate electrode, and carrier injection-preventing means for preventing the carriers generated in the vicinity of said first diffusion layer in said channel region from being injected into said floating gate electrode; a control gate line for supplying predetermined voltages to said control gate electrode, in a read mode and in a write mode; a read line connected to said first diffusion layer, for reading out data from said memory cell; and a write line connected to said second diffusion layer, for writing data into said memory cell.
Claim 12
Dependent Claim
112 words
The memory device according to claim 9, in which said write line supplies a first voltage to said second diffusion layer, in the write mode, and a second voltage, lower than said first voltage, to said second diffusion layer, in the read mode, said control gate line supplies said first voltage to said control gate electrode, in the write mode, and a third voltage, lower than said first voltage but higher than said second voltage, to said control gate electrode, in the read mode, and said read line supplies said second voltage to said first diffusion layer, in the write mode, and said third voltage to the same, in the read mode.
Claim 13
Dependent Claim
55 words
The memory device according to claim 9, in which said carrier injection-preventing means is an insulating film formed between said floating gate and a portion of the substrate surface in which the junction of said first diffusion layer and said channel region is exposed, and prevents carriers from being injected into said floating gate electrode.
Claim 14
Dependent Claim
37 words
The memory device according to claim 9, in which said carrier injection-preventing means is a portion of said control gate and extends above the channel region surface lying between said first diffusion layer and said floating gate.
Claim 15
Dependent Claim
47 words
The memory device according to claim 10, further comprising a load circuit and a sense amplifier circuit, and in which said read line is connected to a power source via said load circuit, and a signal on said read line is supplied to said sense amplifier circuit.
Claim 16
Dependent Claim
24 words
The memory device according to claim 13, in which said load circuit includes a MOS transistor which is conductive only in the read mode.
Claim 17
Dependent Claim
26 words
The memory device according to claim 13, in which said load circuit includes a MOS transistor having a conduction which is controlled by a clock signal.
Claim 18
Dependent Claim
17 words
The memory device according to claim 13, in which said sense amplifier circuit includes an inverter circuit.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1993-05-28 | 1993-11-27 | 1994-05-29 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-05-28 | 1997-11-27 | 1998-05-29 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-05-28 | 2001-11-27 | 2002-05-29 | $7700.00 | Window Closed / Lapsed |