Method of improving yield of LED arrays

Claim 3

The method according to claim 1 wherein after initial examination of each semiconductor wafer and prior to proceeding further, the method further includes discarding those specimen wafers on which the density, character, extent and spacing of parallel linear crystal irregularities revealed by the laser photoluminescent examination render the wafer unfit for further processing.

Claim 4

The method according to claim 2 wherein during the further processing required to form the completed arrays of light emitting diodes, masks employed in fabricating the LED linear arrays are physically aligned with the elongated axes of the diode arrays extending parallel to the parallel linear crystal irregularities at least one of which can be visually observed on the surface of the starting semiconductor wafer.

Claim 5

The method according to claim 3 wherein after alignment and formation of the masks used in defining the linear LED arrays, zinc is diffused into one surface of the wafers to form p-regions for the diode arrays using one of several known diffusion processes, deposition followed by patterning of a p-region metallization layer, alloying of the p-region metallization layer, formation of an anti-reflection coating over the surface of the wafers having the metallized p-regions formed thereon, lapping and polishing down the backside of the wafers to a desired thickness, deposition and alloying of a backside metallization layer, opening contact holes in the anti-reflection coating to expose bonding pads to the p-region metallization layer, electrical testing of the LED arrays as thus far complete, dicing the wafers into individual LED linear arrays, and mounting and bonding the arrays on suitable headers to complete the LED array devices.

Claim 6

The method according to claim 4 wherein the starting light emitting semiconductor wafers comprise gallium-arsenide-phosphide substrates that exhibit n-type characteristics, the masking layer comprises plasma deposited silicon nitride, the zinc diffusion to form the p-regions is achieved by either a spin-on diffusion source, ion implantation, a closed tube diffusion process or by chemical vapor deposition of zinc oxide films, the p-region metallization is achieved either by vacuum deposition of aluminum contacts or sputter deposit of cadmium-tin oxide contacts, the anti-reflection coating comprises plasma deposited silicon nitride, the backside metallization layer comprises a vacuum deposited multiple layer nickel-gold/germanium nickel alloy, and the contact holes are opened in the anti-reflection coating using a positive photoresist mask and plasma etching to expose the bonding pads.