US3618201A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of fabricating lsi circuits
Assignee: Hitachi Ltd
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Filing: 1969-02-17
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Granted: 1971-11-09
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Expires: 1989-02-17
Abstract
Abstract A METHOD OF A FABRICATING LSI CIRCUITS, WHICH COMPRISES TESTING UNIT CELLS FORMED IN A SEMICONDUCTOR WAFER TO SELECTED QUALIFIED UNIT CELLS, SECTIONALIZING THE QUALIFIED UNIT CELLS INTO BLOCK REGIONS EACH INCLUDING A SUITABLE NUMBER OF QUALIFIED UNIT CELLS, AND APPLYING A PREVIOUSLY PREPARED FIXED METALIZATION PATTERN MASK ONTO EACH BLOCK REGION TO ACHIEVE INTERCONNECTION BETWEEN THE UNIT CELLS CONTAINED IN SAID EACH BLOCK REGION, THEREBY ESTABLISHING A PLURALITY OF LSI CIRCUITS OF DIFFERENT TYPES ON THE SINGLE SEMICONDUCTOR WAFER.
Inventors
- 👤 Tsugio Makimoto
- 👤 Minoru Nagata
- 👤 Akira Masaki
- 👤 Masaharu Kubo
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 11:26
CPC Classifications
H; H10; H10D; H10D84/00; H10D84/90; H10D84/901; G; G01; G01R; G01R31/00; G01R31/28; G01R31/316; H10D99/00
Claims Analysis
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References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1974-11-08 | 1975-05-10 | 1975-11-09 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1978-11-08 | 1979-05-10 | 1979-11-09 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1982-11-08 | 1983-05-10 | 1983-11-09 | $7700.00 | Window Closed / Lapsed |