US3813761A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor devices
Assignee: US Philips Corp
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Filing: 1972-02-29
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Granted: 1974-06-04
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Expires: 1992-02-29
Abstract
Abstract Method of producing semiconductor devices, comprising providing semiconductor body with a first major surface comprising mutually adjoining surface portions of substantially rectangular configuration; providing different conductivity type regions at various surface portions; providing metal electrode strips at the first major surface, the strips being substantially parallel to imaginary lines diagonally extending across respective surface portions, with strip portions interconnecting a number of the conductivity regions; and then dividing the semiconductor body along the orthogonal boundaries of the surface portions to produce the devices.
Inventors
- 👤 A Foster
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 00:41
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10D; H10D99/00; H10P; H10P95/00
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
213 words
A method of manufacturing a plurality of semiconductor devices individually including a wafer shaped semiconductor element having opposite major surfaces of substantially rectangular configuration, at least two regions of different conductivity types disposed at a first said major surface, and two spaced electrodes disposed at said first major surface on opposite sides of a diagonal line extending between opposite corners of said first major surface, said electrodes individually contacting at least one of said regions of different conductivity types, said method comprising the steps of: a. providing a semiconductor body comprising a first major surface comprising mutually adjoining surface portions of substantially rectangular configuration; b. providing at said surface portions respective regions of different conductivity type; c. providing at said first major surface electrode means comprising a plurality of spaced metal strips disposed substantially parallel to imaginary lines extending diagonally across respective ones of said surface portions, paired ones of said metal strips being disposed, at respective said surface portions and at least one metal strip of each pair being connected to said different conductivity type regions of said surface portion associated therewith; and then d. dividing said semiconductor body carrying said metal strips, along the orthogonal boundaries of various ones of said surface portions, thereby providing a plurality of said semiconductor devices.
Claim 2
Independent Claim
213 words
A method of manufacturing a plurality of semiconductor devices individually including a wafer shaped semiconductor element having opposite major surfaces of substantially rectangular configuration, at least two regions of different conductivity types disposed at a first said major surface, and two spaced electrodes disposed at said first major surface on opposite sides of a diagonal line extending between opposite corners of said first major surface, said electrodes individually contacting at least one of said regions of different conductivity types, said method comprising the steps of: a. providing a semiconductor body comprising a first major surface comprising mutually adjoining surface portions of substantially rectangular configuration; b. providing at said surface portions respective regions of different conductivity type; c. providing at said first major surface electrode means comprising a plurality of spaced metal strips disposed substantially parallel to imaginary lines extending diagonally across respective ones of said surface portions, paired ones of said metal strips being disposed, at respective said surface portions and at least one metal strip of each pair being connected to said different conductivity type regions of said surface portion associated therewith; and then d. dividing said semiconductor body carrying said metal strips, along the orthogonal boundaries of various ones of said surface portions, thereby providing a plurality of said semiconductor devices.
Claim 3
Dependent Claim
15 words
A method as recited in claim 1, wherein said surface portions are of square outline.
Claim 4
Dependent Claim
19 words
A method as recited in claim 1, wherein said metal strips are all of the same substantially uniform width.
Claim 5
Dependent Claim
80 words
A method as recited in claim 1, wherein said metal strips are produced by the steps of: a. applying an apertured metal mask at said first major surface, said mask embodying the desired pattern of said metal strips; b. spraying a wax material through said mask apertures and onto said first major surface, thereby producing at said first surface a masking pattern partially covering said first surface; and then, c. depositing said metal at exposed portions of said first surface.
Claim 6
Dependent Claim
100 words
A method as recited in claim 4, further comprising the steps of: a. forming an insulating layer on said first major surface before forming said wax masking pattern, said masking layer thereafter being disposed on first portions of said insulating layer; then b. removing the other portions of said insulating layer uncovered by said wax pattern so as to expose parts of said first major surface, said removal being carried out with a fluid material to which said wax material is substantially completely resistant; and then c. forming said metal strips on said exposed parts of said first major surface.
Claim 7
Dependent Claim
29 words
A Method as recited in claim 5, wherein the metal layer strips are formed by electroless plating on said exposed parts of said first surface of said semiconductor body.
Claim 8
Dependent Claim
55 words
A method as recited in claim 1, wherein at least one diffusion step is performed at each rectangular surface portion to obtain said regions of different conductivity types located at said first surface, said diffused regions of each surface portion comprising a pattern having substantial symmetry about the center point of each said surface portion.
Claim 9
Dependent Claim
68 words
A method as recited in claim 1, wherein said semiconductor device is a gate controlled bidirectional semiconductor device and said parts of one of said pairs of metal strips are disposed at said first major surface of said semiconductor device, one of said strips being adapted to serve as a main current carrying electrode and the other of said strips being adapted to serve as a gate electrode.
Claim 10
Dependent Claim
61 words
A method as recited in claim 1, wherein said surface portions of said semiconductor body first major surface are of substantially square configuration and individually comprise two outer said regions diffused therein, said outer regions having areas substantially equal to each other and being symmetrically disposed with respect to the diagonal between opposite corners of respective ones of said surface portions.
Claim 11
Dependent Claim
67 words
A method as recited in claim 9, wherein said diffused outer regions are produced by forming in said first major surface a plurality of parallel continuous diffused regions individually having a strip-like configuration and extending across said first major surface, the respective center lines of said diffused regions being substantially parallel to and disposed between one set of the boundary lines of respective said rectangular surface portions.
Claim 12
Dependent Claim
56 words
A method as recited in claim 10, wherein said continuous regions are produced by steps comprising applying an apertured metal mask at said first major surface, spraying a wax material through said mask apertures onto said first major surface, removing said metal mask and then forming said regions at the uncovered parts of said first surface.
Claim 13
Dependent Claim
80 words
A method as recited in claim 11, wherein an insulating layer is located on said first major surface and said wax material is deposited on said insulating layer as a pattern of parallel rows of strip like regions extending across said insulating layer, removing portions of said insulating layer uncovered by said wax pattern by means of a fluid to which said wax material is substantially completely resistant, and producing said diffused regions at exposed parts of said first surface.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1977-06-03 | 1977-12-03 | 1978-06-04 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1981-06-03 | 1981-12-03 | 1982-06-04 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1985-06-03 | 1985-12-03 | 1986-06-04 | $7700.00 | Window Closed / Lapsed |