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US3590478A Expired / Lapsed US ⏱️ 0.0 years remaining

Method of forming electrical leads for semiconductor device

Assignee: Sony Corp
•
Filing: 1968-05-20
•
Granted: 1971-07-06
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Expires: 1988-05-20
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Abstract

Abstract In the method of forming electrical leads for a semiconductor device, an insulating layer is formed on the area of a semiconductor substrate except at the electrode portion of each semiconductor element, and a parting or releasing agent is then coated over the insulating layer and electrical leads for the said respective elements are then fixed to the substrate in the positions where they extend over the semiconductor substrate of another or other elements. The semiconductor substrate is then divided into respective semiconductor elements and as a result, a semiconductor device, in which electrical leads are projecting outwardly from the circumference of the semiconductor element to which the leads are fixed, is provided.

Inventors

  • 👤 Yoshito Takehana

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-29 00:27
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; Y; Y10; Y10T; Y10T29/00; Y10T29/49; Y10T29/49002; Y10T29/49117; Y10T29/49124; Y10T29/49147

Claims Analysis

Total Claims: 7
Claim 1
Independent Claim 14 words
The method of claim 1 wherein the electrical leads are insulated from each other.
Claim 2
Dependent Claim 30 words
The method of claim 1 wherein the electrical leads contact the electrodes of one element in such a manner that the leads extend over the semiconductor substrate of another element.
Claim 3
Dependent Claim 32 words
The method of claim 1 comprising making the electrical leads contact the electrodes of one element in such a manner that the leads extend over the semiconductor substrate of two other elements.
Claim 4
Dependent Claim 14 words
The method according to claim 1 comprising using photo resist as the releasing agent.
Claim 5
Dependent Claim 14 words
The method according to claim 1 in which the semiconductor element is a diode.
Claim 6
Dependent Claim 14 words
The method according to claim 1 in which the semiconductor element is a transistor.
Claim 7
Dependent Claim 23 words
The method according to claim 1 in which the electrode lead is fixed onto the semiconductor substrate obliquely relative to the semiconductor element.

References Cited (Backward Citations)

US3237281A Cited
US3200468A Cited
US3288662A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1974-07-05 1975-01-04 1975-07-06 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1978-07-05 1979-01-04 1979-07-06 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1982-07-05 1983-01-04 1983-07-06 $7700.00 Window Closed / Lapsed

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