Method and means for contacting and mounting semiconductor devices

Claim 1

A FABRICATION METHOD FOR SEMICONDUCTOR DEVICES COMPRISING: PROVIDING A PLATE OF SEMICONDUCTOR MATERIAL HAVING DEPRESSIONS IN A MAJOR SURFACE SUBDIVIDING SAID SURFACE INTO A PLURALITY OF INDIVIDUAL COPLANAR SURFACE REGIONS DELIMITED AND MUTUALLY SEGREGATED BY SAID DEPRESSIONS AND FURTHER HAVING ON EACH SAID SURFACE REGION AT LEAST ONE OPERATING ELECTRODE; PROVIDING AN INSULATING COATING ON SAID SURFACE REGIONS CONTIGUOUS WITH THE RESPECTIVE ELECTRODES THEREON WHILE LEAVING AT LEAST A SUBSTANTIAL PORTION OF EACH OF SAID ELECTRODES EXPOSED; APPLYING ATOP SAID INSULATING COATING A RESPECTIVE STRIP OF ELECTRICALLY-CONDUCTIVE MATERIAL CONTACTING EACH OF SAID ELECTRODES AND EXTENDING TOWARD AN EDGE OF THE RESPECTIVE SURFACE REGIONS; COATING THE ENTIRE SAID MAJOR SURFACE WITH AN ETCH-RESISTANT MATERIAL; ETCHING THE EXPOSED OPPOSITE SURFACE OF SAID SEMICONDUCTOR PLATE UNTIL THE ETCH-RESISTANT MATERIAL IN SAID DEPRESSIONS IS REACHED, WHEREBY SAID PLATE IS EFFECTIVELY SEPARATED INTO DISCRETE SEGMENTS; AND APPLYING OHMIC CONTACTS TO THE RESPECTIVE ETCHED SURFACES OF SAID DISCRETE PLATE SEGMENTS.