Method of making semiconductor circuit elements

Claim 1

A METHOD OF MAKING A PLURALITY OF PNP TRANSISTORS COMPRISING: (A) DEPOSITING P TYPE BORON MATERIAL OVER THE ENTIRE AREA OF A WAFER OF N TYPE SILICON SEMICONDUCTIVE MATERIAL BY HEATING IN AN ATMOSPHERE OF BORON GAS, (B) RESISTING WITH APIEZON WAX THE ENTIRE AREA OF ONE SIDE OF SAID WAFER TO PROVIDE A COLLECTOR AREA THEREON, (C) RESISTING WITH APIEZON WAX THROUGH A SCREEN FIXTURE SELECTED ALTERNATE SUBSTANTIALLY RECTANGULAR AREAS ON THE OPPOSITE SIDE OF SAID WAFER THEREBY TO PROVIDE EMITTER AREAS THEREON AND SIMULTANEOULSY CREATING UNRESISTED ALTERNATE SUBSTANTIALLY RECTANGULAR AREAS BETWEEN PAIRS OF EMITTER AREAS, (D) ETCHING THE UNRESISTED AREAS OF THE WAFER TO EXPOSE THE ORIGINAL N TYPE SILICON MATERIAL THEREBY TO PROVIDE BASE AREAS, (E) OXIDIZING THE EXPOSED BASE AREAS, (F) DEPOSITING N TYPE PHOSPHORUS MATERIAL ON THE EXPOSED BASE AREAS OF SAID WAFER BY HEATING IN AN ATMOSPHERE OF PHOSPHORUS GAS THEREBY PROVIDING JUNCTIONS BETWEEN THE BASE AND EMITTER AREAS, (G) FURTHER HEATING SAID WAFER IN A HIGH HEAT ATMOSPHERE TO DRIVE THE N TYPE PHOSPHORUS AND P TYPE BORON BY DIFFUSION INTO THE ORIGINAL N TYPE SILICON THUS TO FORM AN ACCURATELY PREDETERMINED THIN UNDIFFUSED BASE AREA IN THE ORIGINAL N TYPE SILICON WAFER, AND (H) COATING THE ENTIRE SURFACE OF SAID WAFER WITH A SINTERED LAYER OF NICKEL THEREBY TO PROVIDE A SOLDERABLE SURFACE AND A TRUE OHMIC CONNECTION TO THE BASE, EMITTER AND COLLECTOR AREAS.

Claim 2

A METHOD OF MAKING A PLURALITY OF PNP TRANSISTORS COMPRISING: (A) DEPOSITING P TYPE BORON MATERIAL OVER THE ENTIRE AREA OF A WAFER OF N TYPE SILICON SEMICONDUCTIVE MATERIAL BY HEATING IN AN ATMOSPHERE OF BORON GAS, (B) RESISTING WITH APIEZON WAX THE ENTIRE AREA OF ONE SIDE OF SAID WAFER TO PROVIDE A COLLECTOR AREA THEREON, (C) RESISTING WITH APIEZON WAX THROUGH A SCREEN FIXTURE SELECTED ALTERNATE SUBSTANTIALLY RECTANGULAR AREAS ON THE OPPOSITE SIDE OF SAID WAFER THEREBY TO PROVIDE EMITTER AREAS THEREON AND SIMULTANEOULSY CREATING UNRESISTED ALTERNATE SUBSTANTIALLY RECTANGULAR AREAS BETWEEN PAIRS OF EMITTER AREAS, (D) ETCHING THE UNRESISTED AREAS OF THE WAFER TO EXPOSE THE ORIGINAL N TYPE SILICON MATERIAL THEREBY TO PROVIDE BASE AREAS, (E) OXIDIZING THE EXPOSED BASE AREAS, (F) DEPOSITING N TYPE PHOSPHORUS MATERIAL ON THE EXPOSED BASE AREAS OF SAID WAFER BY HEATING IN AN ATMOSPHERE OF PHOSPHORUS GAS THEREBY PROVIDING JUNCTIONS BETWEEN THE BASE AND EMITTER AREAS, (G) FURTHER HEATING SAID WAFER IN A HIGH HEAT ATMOSPHERE TO DRIVE THE N TYPE PHOSPHORUS AND P TYPE BORON BY DIFFUSION INTO THE ORIGINAL N TYPE SILICON THUS TO FORM AN ACCURATELY PREDETERMINED THIN UNDIFFUSED BASE AREA IN THE ORIGINAL N TYPE SILICON WAFER, AND (H) COATING THE ENTIRE SURFACE OF SAID WAFER WITH A SINTERED LAYER OF NICKEL THEREBY TO PROVIDE A SOLDERABLE SURFACE AND A TRUE OHMIC CONNECTION TO THE BASE, EMITTER AND COLLECTOR AREAS.