Patent US4912052A successfully refreshed from Google Patents.
US4912052A
Expired / Lapsed
US
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Method of testing semiconductor elements
Assignee: Toshiba Corp
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Filing: 1988-09-23
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Granted: 1990-03-27
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Expires: 2008-09-23
Abstract
Abstract This invention concerns a method and an apparatus for measuring and testing the electric characteristic of a semiconductor device in a non-contact fashion. For conducting measurement and testing in a non-contact fashion, an electron beam is used to induce a voltage, on a semiconductor device which is an object to be tested (an object to be measured.) By changes with lapse of time of the induced voltage, the electric characteristic, of the semiconductor device are determined. Thus, an electron beam is irradiated to an object to be tested to induce a voltage thereafter to examine changes in the induced voltage. Then, the electric characteristic of the semiconductor device is measured and tested from the voltage thus induced and the voltage measured thereafter.
Inventors
- 👤 Motosuke Miyoshi
- 👤 Katsuya Okumura
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 18:58
CPC Classifications
G; G01; G01R; G01R31/00; G01R31/28; G01R31/302; G01R31/305
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
117 words
A method of testing semiconductor elements comprising: a voltage induction stage for irradiating one electrode of a capacitor connected in parallel with elements to be tested that are formed on a semiconductor substrate with an electron beam, to thereby inject charges thereinto and induce a predetermined voltage on said electrode, and a voltage measurement stage for irradiating a terminal of said electrode of said elements to be tested with an electron beam, to observe secondary electrons emitted from said terminal to thereby measure a voltage appearing on said terminal to test said elements on the basis of the relationship between the voltage induced at said voltage induction stage and the voltage measured at said voltage measurement stage.
Claim 2
Independent Claim
117 words
A method of testing semiconductor elements comprising: a voltage induction stage for irradiating one electrode of a capacitor connected in parallel with elements to be tested that are formed on a semiconductor substrate with an electron beam, to thereby inject charges thereinto and induce a predetermined voltage on said electrode, and a voltage measurement stage for irradiating a terminal of said electrode of said elements to be tested with an electron beam, to observe secondary electrons emitted from said terminal to thereby measure a voltage appearing on said terminal to test said elements on the basis of the relationship between the voltage induced at said voltage induction stage and the voltage measured at said voltage measurement stage.
Claim 3
Dependent Claim
45 words
A method of testing semiconductor elements as set forth in claim 1, wherein, at said voltage induction stage, a grid is provided above said electrode of said capacitor to control a voltage appearing on said grid to thereby effect a control of an induced voltage.
Claim 4
Dependent Claim
35 words
A method of testing semiconductor elements as set forth in claim 2, wherein, at said voltage measurement stage, voltages for extracting and drawing secondary electrons are alternately applied to said grid provided above said electrode.
Claim 5
Independent Claim
31 words
A method of testing semiconductor elements as set forth in any one of claims 1 to 3, wherein said capacitor is formed together with said elements in a semiconductor manufacturing process.
Claim 6
Dependent Claim
26 words
A method of testing semiconductor elements as set forth in claim 2, wherein said capacitor is formed together with said elements in a semiconductor manufacturing process.
Claim 7
Dependent Claim
26 words
A method of testing semiconductor elements as set forth in claim 3, wherein said capacitor is formed together with said elements in a semiconductor manufacturing process.
Claim 8
Dependent Claim
63 words
A non-contact testing method comprising: using an electron beam to irradiate a capacitive object to be measured to inject charges thereinto, thereby inducing a voltage on said object to be measured, and measuring a voltage on said object to be measured after a predetermined time period has passed by using an electron beam, thereby measuring electric parameters of said object to be measured.
Claim 9
Dependent Claim
63 words
A non-contact testing method comprising: using an electron beam to irradiate a capacitive object to be measured to inject charges thereinto, thereby inducing a voltage on said object to be measured, and measuring a voltage on said object to be measured after a predetermined time period has passed by using an electron beam, thereby measuring electric parameters of said object to be measured.
Claim 10
Dependent Claim
34 words
A non-contact testing method using an electron beam as set forth in claim 7, wherein an electron beam for injecting charges and an electron beam for measurement are activated at optimum acceleration voltages, respectively.
Claim 11
Dependent Claim
31 words
A non-contact testing method using an electron beam as set forth in claim 7, wherein electron beams from the same beam generator are used for injection of charges and measurement, respectively.
Claim 12
Dependent Claim
30 words
A non-contact testing method using an electron beam as set forth in claim 7, wherein electron beams from individual beam generators are used for injection of charges and measurement respectively.
References Cited (Backward Citations)
JPS56126933A
Cited
JPS5745465A
Cited
US4464571A
Cited
US4554455A
Cited
US4609867A
Cited
US4788495A
Cited
US4807159A
Cited
US4748407A
Cited
US4786865A
Cited
US4733174A
Cited
US4766372A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1993-03-26 | 1993-09-25 | 1994-03-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-03-26 | 1997-09-25 | 1998-03-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-03-26 | 2001-09-25 | 2002-03-27 | $7700.00 | Window Closed / Lapsed |