US4874715A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Read only memory with improved channel length control and method of forming
Assignee: Texas Instruments Inc
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Filing: 1988-06-10
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Granted: 1989-10-17
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Expires: 2008-06-10
Abstract
Abstract The specification discloses a floating gate read only memory formed in an array of rows (15) and columns (17) of memory cells (10). A conductivity-type determining layer (24) is formed over a face of a semiconductor body (30). An oxide layer (32) is formed over layer (24) and spaced apart elongated trenches (44) are formed through the layers (32) and (24) to form columns (17) of impurity layers. A first gate insulating layer (32a) is formed over the trenches (44). Discrete regions of polycrystalline silicon (34) are formed over spaced apart locations of the trenches (44) to form floating gates. A second gate insulating layer (36) is formed over the floating gates. A pattern of spaced apart parallel strips (40) are formed overlying the floating gates and normal to the columns (17) to form the rows (15) of memory cells.
Inventors
- 👤 James L. Paterson
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 18:42
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/60; H10D30/68; H10D30/681; H10D30/684; H10D30/685
Claims Analysis
Total Claims: 24
Claim 1
Independent Claim
127 words
A method of making a semiconductor device comprising: doping a region at face of a semiconductor body with a conductivity-type determining impurity, forming a layer of insulator material over said doped region, forming first and second trenches extending through said insulator layer and said doped region into said semiconductor body, a portion of said doped region extending contiguously from said first trench to said second trench, forming a gate insulating layer covering said first and second trenches, forming a layer of conductive material over said trenches to form first and second floating gates therein, respectively, forming a third insulating layer over said first and second floating gates, and forming a second conductive layer over said third insulating layer and contiguous over said first and second floating gates.
Claim 2
Independent Claim
127 words
A method of making a semiconductor device comprising: doping a region at face of a semiconductor body with a conductivity-type determining impurity, forming a layer of insulator material over said doped region, forming first and second trenches extending through said insulator layer and said doped region into said semiconductor body, a portion of said doped region extending contiguously from said first trench to said second trench, forming a gate insulating layer covering said first and second trenches, forming a layer of conductive material over said trenches to form first and second floating gates therein, respectively, forming a third insulating layer over said first and second floating gates, and forming a second conductive layer over said third insulating layer and contiguous over said first and second floating gates.
Claim 3
Dependent Claim
29 words
The method of claim 1, further comprising: heating the semiconductor body after said step of forming a layer of conductive material, to diffuse the dopant of said doped region.
Claim 4
Dependent Claim
23 words
The method of claim 1, and further comprising forming a layer of silicon nitride between said floating gates and said second conductive layer.
Claim 5
Dependent Claim
24 words
The method of claim 1 wherein said semiconductor body is silicon, said insulator layer is silicon oxide, and said conductive layer is polycrystalline silicon.
Claim 6
Dependent Claim
14 words
The method of claim 1 wherein a floating gate non-volatile semiconductor memory is formed.
Claim 7
Dependent Claim
29 words
The method of claim 5 wherein the effective electrical channel length of floating gate transistor cell at said first trench is defined by the width of said first trench.
Claim 8
Dependent Claim
15 words
The method of claim 1 wherein said floating gates overlap the edges of said trenches.
Claim 9
Dependent Claim
21 words
The method of claim 1 wherein said floating gates are planarized and do not extend past the dimensions of said trench.
Claim 10
Dependent Claim
11 words
The method of claim 1 wherein said doped region is n-type.
Claim 11
Dependent Claim
34 words
The method of claim 1, further comprising: forming a metal silicide layer at the surface of said doped region, prior to said step of forming a layer of insulator material over said doped region.
Claim 12
Dependent Claim
50 words
The method of claim 10, wherein said step of forming a metal silicide layer comprises: forming a layer of a refractory metal over the surface of said doped region; and heating the semiconductor body so that said refractory metal reacts with said doped region to form a metal silicide layer.
Claim 13
Independent Claim
156 words
A method of making a floating gate semiconductor memory in the form of an array of rows and columns of memory cells comprising the steps of: forming a doped region over a portion of a face of a semiconductor body at which said array is to be formed, forming a layer of oxide over said doped region, forming spaced apart elongated trenches extending through said oxide and doped region into said semiconductor body thereunder, to divide said doped region into columns between said trenches, forming a first gate insulating layer covering said trenches, forming polycrystalline silicon floating gates overlying spaced apart locations of said trenches, those floating gates which overlie a common trench defining a column of memory cells, forming a second gate insulating layer over said floating gates, and forming strips of polycrystalline silicon, each strip overlying a plurality of said floating gates in a plurality of columns to define a row of memory cells.
Claim 14
Independent Claim
156 words
A method of making a floating gate semiconductor memory in the form of an array of rows and columns of memory cells comprising the steps of: forming a doped region over a portion of a face of a semiconductor body at which said array is to be formed, forming a layer of oxide over said doped region, forming spaced apart elongated trenches extending through said oxide and doped region into said semiconductor body thereunder, to divide said doped region into columns between said trenches, forming a first gate insulating layer covering said trenches, forming polycrystalline silicon floating gates overlying spaced apart locations of said trenches, those floating gates which overlie a common trench defining a column of memory cells, forming a second gate insulating layer over said floating gates, and forming strips of polycrystalline silicon, each strip overlying a plurality of said floating gates in a plurality of columns to define a row of memory cells.
Claim 15
Dependent Claim
20 words
The method of claim 12 wherein said doped region is of the opposite conductivity type from said semiconductor body thereunder.
Claim 16
Dependent Claim
24 words
The method of claim 12 and further comprising forming an oxidation mask between said polycrystalline silicon floating gates and said strips of polycrystalline silicon.
Claim 17
Dependent Claim
12 words
The method of claim 14 wherein said oxidation mask comprises silicon nitride.
Claim 18
Dependent Claim
26 words
The method of claim 12 wherein the effective electrical channel length of said memory cells in a column is defined by the width of said trench.
Claim 19
Dependent Claim
15 words
The method of claim 12 wherein said floating gate overlaps the edges of said trench.
Claim 20
Dependent Claim
21 words
The method of claim 12 wherein said floating gate is planarized and does not extend past the dimensions of said trench.
Claim 21
Dependent Claim
24 words
The method of claim 12 wherein the thickness of said first gate insulating layer is less than the thickness of said layer of oxide.
Claim 22
Dependent Claim
33 words
The method of claim 12, further comprising: forming a metal silicide layer at the surface of said doped region, prior to said step of forming a layer of oxide over said doped region.
Claim 23
Dependent Claim
50 words
The method of claim 20, wherein said step of forming a metal silicide layer comprises: forming a layer of a refractory metal over the surface of said doped region; and heating the semiconductor body so that said refractory metal reacts with said doped region to form a metal silicide layer.
Claim 24
Dependent Claim
26 words
The method of claim 10, further comprising: heating the semiconductor body after said step of forming floating gates, to diffuse the dopant of said doped region.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-10-16 | 1993-04-17 | 1993-10-17 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-10-16 | 1997-04-17 | 1997-10-17 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-10-16 | 2001-04-17 | 2001-10-17 | $7700.00 | Window Closed / Lapsed |