US4422092A
Expired / Lapsed
US
⏱️ 0.0 years remaining
High coupling ratio electrically programmable ROM
Assignee: Texas Instruments Inc
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Filing: 1982-02-01
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Granted: 1983-12-20
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Expires: 2002-02-01
Abstract
Abstract An electrically programmable read only memory (EPROM) of the floating gate type is constructed having an improved coupling ratio made by allowing the edges of the floating gates to be self aligned with the edges of the control gates. The ratio of the capacitance between the floating gate and control gate is increased by extending the floating gate out over the source and drain.
Inventors
- 👤 Daniel C. Guterman
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 02:40
CPC Classifications
H; H10; H10B; H10B41/00; H10B41/10; H10B69/00; H10D; H10D30/00; H10D30/60; H10D30/68; H10D30/681; H10D30/684; H10D30/685; H10D64/00; H10D64/01; H10D64/031; H10D64/035
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
163 words
A semiconductor device comprising: a first field oxide on a face of a semiconductor body surrounding an active area of the face, a plurality of heavily doped regions in said face in said active area, such regions being covered by a second field oxide at said face, such regions being spaced from one another, a first layer of conductive material overlying said face at said active area forming an electrode located above the space between the heavily doped regions and also overlapping the heavily doped regions by a significant amount, the first layer also extending over the first field oxide by a substantial amount, a second layer of conductive material on said face overlying the first layer and defining an elongated strip overlying the heavily doped regions, the second layer having opposite edges coinciding with edges of the first layer, a thin insulator separating the first layer from said face, the first and second field oxides being much thicker than said thin insulator.
Claim 2
Dependent Claim
163 words
A semiconductor device comprising: a first field oxide on a face of a semiconductor body surrounding an active area of the face, a plurality of heavily doped regions in said face in said active area, such regions being covered by a second field oxide at said face, such regions being spaced from one another, a first layer of conductive material overlying said face at said active area forming an electrode located above the space between the heavily doped regions and also overlapping the heavily doped regions by a significant amount, the first layer also extending over the first field oxide by a substantial amount, a second layer of conductive material on said face overlying the first layer and defining an elongated strip overlying the heavily doped regions, the second layer having opposite edges coinciding with edges of the first layer, a thin insulator separating the first layer from said face, the first and second field oxides being much thicker than said thin insulator.
Claim 3
Dependent Claim
34 words
A semiconductor device according to claim 1 wherein said electrode is a floating gate of a programmable field effect transistor, and said elongated strips forms an address lines and control gate for the transistor.
Claim 4
Dependent Claim
36 words
A semiconductor device according to claim 2 wherein the thin insulator is thin gate oxide separating the floating gate from said face, and said first and second field oxide is much thicker than the gate oxide.
References Cited (Backward Citations)
US4282540A
Cited
US4258378A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1986-12-19 | 1987-06-20 | 1987-12-20 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1990-12-19 | 1991-06-20 | 1991-12-20 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1994-12-19 | 1995-06-20 | 1995-12-20 | $7700.00 | Window Closed / Lapsed |