Patent US4861623A successfully refreshed from Google Patents.
US4861623A
Expired / Lapsed
US
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Method for forming deposited film by generating precursor with halogenic oxidizing agent
Assignee: Canon Inc
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Filing: 1986-12-16
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Granted: 1989-08-29
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Expires: 2006-12-16
Abstract
Abstract A method for forming a deposited film comprises introducing a gaseous starting material containing silicon and/or germanium atoms; a starting material containing at least one member selected from the group consisting of aluminum (Al), molybdenum (Mo), tungsten (W), titanium (Ti), and tantalum (Ta), which is capable of being converted to gaseous state; and a gaseous halogenic oxidizing agent which exerts an oxidative effect on the said starting materials for film formation, into a reaction space to effect contact therebetween to thereby chemically form a plural number of precursors containing precursors under excited state, and forming a deposited film on a substrate existing in a film-forming space by the use of at least one precursors of said percursors as the feeding source for the constituent element of the deposited film.
Inventors
- 👤 Masao Ueki
- 👤 Masaaki Hirooka
- 👤 Junichi Hanna
- 👤 Isamu Shimizu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 03:15
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/40; H10P14/412; H10P14/414
Claims Analysis
Total Claims: 18
Claim 1
Independent Claim
179 words
A method for forming a deposited silicide and/or germanide film without the assistance of plasma discharge, comprising: introducing into reaction space (a) a gaseous first starting material, (b) a second starting material capable of being converted to a gaseous state, and (o) a gaseous halogenic oxidizing agent capable of exerting an oxidation effect on said starting materials; said gaseous first starting material being selected from the group consisting of silicon-containing compounds, geramnium-containing compounds and mixtures thereof; said second starting material containing at least one metal selected from the group consisting of Al, Mo, W, Ti, Ta and Cr; said gaseous halogenic oxidizing agent being selected from the group consisting of F 2 , Cl 2 , Br 2 and I 2 ; allowing said starting materials and said gaseous halogenic oxidizing agent to mix and contact each other thereby forming without the use of external energy a plurality of precursors including precursors in an excited state; and feeding at least one of said precursors into a film-forming space containing a substrate to form said deposited film on said substrate.
Claim 2
Independent Claim
179 words
A method for forming a deposited silicide and/or germanide film without the assistance of plasma discharge, comprising: introducing into reaction space (a) a gaseous first starting material, (b) a second starting material capable of being converted to a gaseous state, and (o) a gaseous halogenic oxidizing agent capable of exerting an oxidation effect on said starting materials; said gaseous first starting material being selected from the group consisting of silicon-containing compounds, geramnium-containing compounds and mixtures thereof; said second starting material containing at least one metal selected from the group consisting of Al, Mo, W, Ti, Ta and Cr; said gaseous halogenic oxidizing agent being selected from the group consisting of F 2 , Cl 2 , Br 2 and I 2 ; allowing said starting materials and said gaseous halogenic oxidizing agent to mix and contact each other thereby forming without the use of external energy a plurality of precursors including precursors in an excited state; and feeding at least one of said precursors into a film-forming space containing a substrate to form said deposited film on said substrate.
Claim 3
Dependent Claim
16 words
A method according to claim 1, wherein the gaseous starting material is a chain silane compound.
Claim 4
Dependent Claim
16 words
A method according to claim 2, wherein the chain silane compound is a linear silane compound.
Claim 5
Dependent Claim
28 words
A method according to claim 3, wherein the linear silane compound is represented by the general formula: SinH.sub.n H.sub.2n+2 (wherein n is an integer of 1 to 8).
Claim 6
Dependent Claim
17 words
A method according to claim 2, wherein the chain silane compound is a branched chain silane compound.
Claim 7
Dependent Claim
21 words
A method according to claim 1, wherein the gaseous starting material is a silane compound having a cyclic structure of silicon.
Claim 8
Dependent Claim
15 words
A method according to claim 1, wherein the gaseous starting material is a germanium compound.
Claim 9
Dependent Claim
27 words
A method according to claim 7, wherein the germanium compound is represented by the general formula: GemH.sub.m H.sub.2m+2 (wherein m is an integer of 1 to 5).
Claim 10
Dependent Claim
16 words
A method according to claim 1, wherein the gaseous starting material is a hydrogenated silicon compound.
Claim 11
Dependent Claim
16 words
A method according to claim 1, wherein the gaseous starting material is a tetrahedral system compound.
Claim 12
Dependent Claim
16 words
A method according to claim 1, wherein the gaseous halogenic oxidizing agent is under nascent state.
Claim 13
Dependent Claim
36 words
A method according to claim 1, wherein the substrate is arranged at a position opposed to the direction in which the gaseous starting materials and the gaseous halogenic oxidizing agent are introduced into the reaction space.
Claim 14
Dependent Claim
30 words
A method according to claim 1, wherein the gaseous starting materials and the gaseous halogenic oxidizing agent are introduced into the reaction space through transporting pipe of a multi-tubular structure.
Claim 15
Dependent Claim
17 words
A method according to claim 1, wherein the forming of said deposited film is accompanied with luminescence.
Claim 16
Dependent Claim
15 words
A method according to claim 1, wherein said second starting material is an organometallic compound.
Claim 17
Dependent Claim
15 words
A method according to claim 1, wherein said second starting material is a hydrogenated compound.
Claim 18
Dependent Claim
14 words
A method according to claim 1, wherein said second starting material is a halide.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-08-28 | 1993-02-27 | 1993-08-29 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-08-28 | 1997-02-27 | 1997-08-29 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-08-28 | 2001-02-27 | 2001-08-29 | $7700.00 | Window Closed / Lapsed |