Abstract An apparatus for chemically activated depositing in a plasma. Said apparatus includes a chamber (1) in which a vacuum is maintained, said chamber being closed by means of a top plate (2) and a bottom plate (3) which are removable. Said apparatus further includes a substrate support (5) disposed about said axis, a reactive gas distributor manifold and means (4) for setting up a plasma inside said chamber (1). Said manifold (8) has two circular end portions (9,10) interconnected by pipes (11) in which gas outlet orifices are provided; said pipes being rotatable at a uniform speed about the axis of the chamber inside said substrate support; said support being of polygonal cross-section and constituted by rectangular longitudinally extending facets on which the substrates (7) are deposited. The invention is used to deposit chromium, silicon, aluminium and the like.
Inventors
👤 Jean-Jacques Bessot
👤 Bernard Bourdon
Bibliographic Details
Application Number—
JurisdictionUS
Data Sourcegoogle_patents
Last Synchronized2026-10-25 14:07
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/44; C23C16/50
Claims Analysis
Total Claims: 3
Claim 1
Independent Claim
145 words
An apparatus for chemically activated deposition in a plasma, said apparatus comprising: a chamber in which a vacuum is maintained, said chamber having a longitudinal axis of symmetry and being closed by means of first and second removable end plates; a substrate support disposed about said axis within said chamber; a reactive gas distribution manifold; and means for setting up and maintaining a plasma inside said chamber, the improvement wherein; said substrate support is of polygonal cross-section, constituted by rectangular longitudinally extending facets, and wherein said manifold comprises two circular end portions interconnected by longitudinally extending pipes, means for rotating said manifold at uniform speed about the axis of the chamber and inside said substrate support, and wherein said pipes are provided with gas outlet orifices on the sides remote from the axis of rotation and facing said substrates borne by said longitudinally extending facets.
Claim 2
Independent Claim
145 words
An apparatus for chemically activated deposition in a plasma, said apparatus comprising: a chamber in which a vacuum is maintained, said chamber having a longitudinal axis of symmetry and being closed by means of first and second removable end plates; a substrate support disposed about said axis within said chamber; a reactive gas distribution manifold; and means for setting up and maintaining a plasma inside said chamber, the improvement wherein; said substrate support is of polygonal cross-section, constituted by rectangular longitudinally extending facets, and wherein said manifold comprises two circular end portions interconnected by longitudinally extending pipes, means for rotating said manifold at uniform speed about the axis of the chamber and inside said substrate support, and wherein said pipes are provided with gas outlet orifices on the sides remote from the axis of rotation and facing said substrates borne by said longitudinally extending facets.
Claim 3
Dependent Claim
65 words
An apparatus according to claim 1, wherein said means for setting up and maintaining a plasma inside said chamber include a cylindrical electrode disposed in the center of said chamber, fixed at one of its ends to said first end plate and projecting internally of said rotatable manifold, and wherein a counter electrode is formed by the rectangular longitudinally extending facets defining said substrate support.