Abstract An apparatus is provided for vapor depositing an epitaxial semiconductor layer or film on a semiconductor substrate comprising a susceptor of prismatic configuration supported along its longitudinal axis. The susceptor is confined within a housing to shield it from the external environment. A gas inlet pipe with at least one slit or orifice therealong is provided within the housing along one side of the susceptor and an outlet pipe also with at least one slit or orifice for exhausting gas substantially diametrally opposite the inlet pipe along the other side of the susceptor. The surface of the susceptor is provided with holding means for supporting semiconductor substrates. The apparatus has means for heating the susceptor and means for effecting relative axial rotation as between the pipes and the susceptor about the longitudinal axis of the susceptor. Preferably, the susceptor and pipes are rotated in mutually opposite directions.
The vapor deposition apparatus of claim 1, wherein said susceptor and said inlet and outlet pipes are respectively adapted to axially rotate in mutually opposite directions.
Claim 2
Dependent Claim
23 words
The vapor deposition apparatus of claim 2, wherein the semiconductor substrates are supported in openings on the surface of the susceptor by suction.
Claim 3
Independent Claim
144 words
A method of vapor depositing an epitaxial semiconductor layer on semiconductor substrates which comprises, providing a susceptor of prismatic configuration disposed along its longitudinal axis, said susceptor being confined within a housing so as to shield it from the external environment, providing a gas inlet pipe with at least one slit or orifices therealong within said housing disposed and spaced longitudinally along one side of said susceptor and an outlet pipe with at least one slit or orifices substantially diametrally opposite said inlet pipe disposed and spaced longitudinally along the opposite side of said susceptor, disposing a plurality of spaced semiconductor substrates about the surface of said susceptor, heating said susceptor, and feeding vapor through said inlet pipe and exhausting it through said outlet pipe, while effecting relative axial rotation as between said pipes and said susceptor about the longitudinal axis of said susceptor.
Claim 4
Dependent Claim
23 words
The method of claim 4, wherein said pipes and said susceptor are axially rotated about the said longitudinal axis in mutually opposite directions.