Patent US4219003A successfully refreshed from Google Patents.
Patent US4855160A successfully refreshed from Google Patents.
US4855160A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for passivating wafer
Assignee: Texas Instruments Inc
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Filing: 1988-05-26
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Granted: 1989-08-08
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Expires: 2008-05-26
Abstract
Abstract A high pressure processing apparatus and method which is compatible with a system wherein wafers are largely transported and processed under vacuum. The pressure vessel can be extremely small, i.e. has a total pressurized volume of which almost all interior points are within one or two centimeters of one of the workpiece or wafers which may be loaded into the chamber. HgCdTe is passivated by utilizing oxygen and water vapor for oxidation or a source of sulfur for sulfidization. The wafers and the gases are heated by a heater located on the vertical walls of the process chamber.
Inventors
- 👤 Joseph D. Luttmer
- 👤 Cecil J. Davis
- 👤 Patricia B. Smith
- 👤 Rudy L. York
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 18:16
CPC Classifications
H; H10; H10P; H10P72/00; H10P72/30; H10P72/36; H10P72/3604; H10P14/00; H10P14/60; H10P14/69; H10P14/692
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
49 words
A method for depositing a passivating layer on a mercury-cadmium-telluride wafer comprising: (a) disposing said wafer into a high pressure process chamber under low pressure; (b) heating said chamber; and (c) introducing a source of sulfur into said chamber at high pressure and to a face of said wafer.
Claim 2
Independent Claim
49 words
A method for depositing a passivating layer on a mercury-cadmium-telluride wafer comprising: (a) disposing said wafer into a high pressure process chamber under low pressure; (b) heating said chamber; and (c) introducing a source of sulfur into said chamber at high pressure and to a face of said wafer.
Claim 3
Independent Claim
52 words
A method for depositing a passivating layer on a mercury-cadmium-telluride wafer comprising: (a) disposing said wafer in a high pressure process chamber under low pressure; (b) heating said chamber; and (c) introducing an oxygen and water vapor containing mixture into said chamber at high pressure and to a face of said wafer.
Claim 4
Independent Claim
52 words
A method for depositing a passivating layer on a mercury-cadmium-telluride wafer comprising: (a) disposing said wafer in a high pressure process chamber under low pressure; (b) heating said chamber; and (c) introducing an oxygen and water vapor containing mixture into said chamber at high pressure and to a face of said wafer.
Claim 5
Dependent Claim
23 words
The method for depositing a passivating layer on a mercury-cadmium-telluride wafer of claim 1 wherein the source of sulfur is H 2 S.
Claim 6
Dependent Claim
25 words
The method for depositing a passivating layer on a mercury-cadmium-telluride wafer of claim 1 wherein the chamber is heated to between 50° and 100° C.
Claim 7
Dependent Claim
25 words
The method for depositing a passivating layer on a mercury-cadmium-telluride wafer of claim 1 wherein the chamber is pressurized to between 50 and 100 atmospheres.
Claim 8
Dependent Claim
25 words
A method for depositing a passivating layer on a mercury-cadmium-telluride wafer of claim 2 wherein the chamber is heated to between 50° and 100° C.
Claim 9
Dependent Claim
25 words
The method for depositing a passivating layer on a mercury-cadmium-telluride wafer of claim 2 wherein the chamber is pressurized to between 10 and 100 atmospheres.
Claim 10
Dependent Claim
28 words
The method for depositing a passivating layer on a mercury-cadmium-telluride wafer of claim 2 wherein oxygen and hydrogen are introduced to form an oxygen and water vapor mixture.
Claim 11
Dependent Claim
32 words
The method for depositing a passivating layer on a mercury-cadmium-telluride wafer of claim 8 wherein 100 sccm oxygen and 40 sccm hydrogen are introduced to form an oxygen and water vapor mixture.
Claim 12
Dependent Claim
41 words
The method for depositing a passivating layer on a mercury-cadmium-telluride wafer of claim 9 wherein 100 sccm oxygen and 40 sccm hydrogen are introduced to form an oxygen and water vapor mixture at a pressure of between 10 and 100 atmospheres.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-08-07 | 1993-02-06 | 1993-08-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-08-07 | 1997-02-06 | 1997-08-08 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-08-07 | 2001-02-06 | 2001-08-08 | $7700.00 | Window Closed / Lapsed |