Patent US4849249A successfully refreshed from Google Patents.
US4849249A
Expired / Lapsed
US
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Deposited film forming process and deposited film forming device
Assignee: Canon Inc
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Filing: 1988-04-25
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Granted: 1989-07-18
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Expires: 2008-04-25
Abstract
Abstract A process for forming a deposited film according to chemical vapor deposition on a substrate comprises the first step of forming an amorphous film by reacting an excited species (AY) containing an atom (A) which becomes the constituent constituting said deposited film and an atom (Y) with high electronegativity with an active species (Z) which is chemically reactive with said excited species (AY) at a first ratio and the second step of forming a polycrystalline film by reacting said excited species (AY) with said active species (Z) at a second ratio which is different from said first ratio.
Inventors
- 👤 Shunichi Ishihara
- 👤 Yoshiyuki Osada
- 👤 Shunri Oda
- 👤 Isamu Shimizu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 10:40
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/44; C23C16/448; C23C16/452; C23C16/22
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
98 words
A process for forming a deposited film according to chemical vapor deposition on a substrate, comprising the first step of forming an amorphous film by reacting an excited species (AY) containing an atom (A) which becomes the constituent constituting said deposited film and an atom (Y) with high electronegativity with an active species (Z) which is chemically reactive with said excited species (AY) at a first ratio and the second step of forming a polycrystalline film by reacting said excited species (AY) with said active species (Z) at a second ratio which is different from said first ratio.
Claim 2
Dependent Claim
98 words
A process for forming a deposited film according to chemical vapor deposition on a substrate, comprising the first step of forming an amorphous film by reacting an excited species (AY) containing an atom (A) which becomes the constituent constituting said deposited film and an atom (Y) with high electronegativity with an active species (Z) which is chemically reactive with said excited species (AY) at a first ratio and the second step of forming a polycrystalline film by reacting said excited species (AY) with said active species (Z) at a second ratio which is different from said first ratio.
Claim 3
Dependent Claim
105 words
A process for forming a deposited film according to claim 1, wherein the amorphous film is formed on a first portion of said substrate by reacting the excited species (AY) and the active species (Z) at said first ratio in the region in the vicinity of the first portion of the substrate, and at the same time the polycrystalline film is formed on a second portion of said substrate by reacting the excited species (AY) with the active species (Z) at said second ratio in the region in the vicinity of the second portion which is different from said first portion of the above substrate.
Claim 4
Dependent Claim
28 words
A process for forming a deposited film according to claim 1, wherein at least a part of the polycrystalline film formed by deposition is selectively irradiated with light.
Claim 5
Dependent Claim
57 words
A process for forming a deposited film according to claim 1, wherein said excited species (AY) is selected from those shown below: SiF 2 *, GeF 2 *, CF 2 *, SiBr 2 *, GeBr 2 *, CBr 2 *, SiHF*, GeHF*, CHF*, SiHF 2 *, SiH 2 F*, SiCl 2 *, CO* (Asterisk indicates excited species.)
Claim 6
Dependent Claim
67 words
A process for forming a deposited film according to claim 4, wherein the starting material for forming the excited species (AY) is represented by the following formula (1) or (2): A.sub.a H.sub.b X.sub.c . . . (1) (AH.sub.m X.sub.2 -.sub.m).sub.n . . . (2) (wherein A=Si, Ge, C; H is hydrogen atoms; X=F, Cl, Br; a=1, 2, 3, 4, 5; b+c=2(a+1); m=0, 1; n=3, 4, 5, 6).
Claim 7
Dependent Claim
223 words
A process for forming a deposited film according to claim 5, wherein the starting material represented by the formula (1) or (2) is selected from among those shown below: SiF 4 , SiFH 3 , SiF 2 H 2 , SiF 3 H, GeF 4 , GeFH 3 , GeF 2 H 2 , GeF 3 H, CF 4 , CFH 3 , CF 2 H 2 , CF 3 H, Si 2 F 6 , Si 2 F 5 H, Si 2 F 4 H 2 , Si 2 F 3 H 3 , Si 2 F 2 H 4 , Si 2 FH 5 , Ge 2 F 6 , Ge 2 F 5 H, Ge 2 F 4 H 2 , C 2 F 6 , C 2 F 5 H, C 2 F 4 H 2 , SiBr 4 , SiCl 4 , CBr 4 , CCl 4 , Si 3 F 8 , Ge 3 F 8 , C 3 F 8 , Si 2 F 3 Cl 3 , Si 2 F 3 Br 3 , (SiF 2 ) 6 , (SiF 2 ) 4 , (SiCl 2 ) 5 , (SiBr 2 ) 5 , (SiHF) 6 , (SiF 2 ) 3 , SiH 2 (C 6 H 5 ) 2 , SiH 2 (CN) 2
Claim 8
Dependent Claim
23 words
A process for forming a deposited film according to claim 1, wherein the energy for forming the excited species (AY) is light energy.
Claim 9
Dependent Claim
18 words
A process for forming a deposited film according to claim 7, wherein the light energy is laser energy.
Claim 10
Independent Claim
158 words
A device for forming deposited films on a substrate by a chemical vapor deposition process, comprising two or more reaction chambers wherein a reaction occurs between an excited species with an active species; and a substrate supporting member for supporting a substrate said substrate supporting member positioned in a film forming space external to each of said reaction chambers; each of said reaction chambers having an outlet for expelling excited and active species into said film forming space towards said substrate supporting member such that when a substrate is positioned in said supporting member, said outlet of one reaction chamber is opposite and adjacent to one portion of said substrate, and said outlet of another reaction chamber is opposite and adjacent to another portion of said substrate, wherein the deposited films on said one and said another portions of said substrate are formed from the reaction taking place in the reaction chamber of the outlet of each portion.
Claim 11
Independent Claim
158 words
A device for forming deposited films on a substrate by a chemical vapor deposition process, comprising two or more reaction chambers wherein a reaction occurs between an excited species with an active species; and a substrate supporting member for supporting a substrate said substrate supporting member positioned in a film forming space external to each of said reaction chambers; each of said reaction chambers having an outlet for expelling excited and active species into said film forming space towards said substrate supporting member such that when a substrate is positioned in said supporting member, said outlet of one reaction chamber is opposite and adjacent to one portion of said substrate, and said outlet of another reaction chamber is opposite and adjacent to another portion of said substrate, wherein the deposited films on said one and said another portions of said substrate are formed from the reaction taking place in the reaction chamber of the outlet of each portion.
Claim 12
Dependent Claim
49 words
A device for forming a deposited film according to claim 9, wherein said outlet of one reaction chamber is opposite one portion of said surface of said substrate supporting member, and said outlet of another reaction chamber is opposite another portion of said surface of said substrate supporting member.
Claim 13
Dependent Claim
18 words
A device for forming a deposited film according to claim 9, wherein the substrate supporting means is movable.
Claim 14
Dependent Claim
28 words
A device for forming a deposited film according to claim 9, wherein each reaction chamber has a first tube structure with a second tube structure concentrically positioned therein.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-07-17 | 1993-01-16 | 1993-07-18 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-07-17 | 1997-01-16 | 1997-07-18 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-07-17 | 2001-01-16 | 2001-07-18 | $7700.00 | Window Closed / Lapsed |