Patent US4844950A successfully refreshed from Google Patents.
US4844950A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for forming a metal film on a substrate
Assignee: Canon Inc
•
Filing: 1986-12-16
•
Granted: 1989-07-04
•
Expires: 2006-12-16
Abstract
Abstract A method for forming a deposited film comprises introducing into a reaction space a gasifiable starting material containing a transition metal element for formation of a deposited film and a gaseous halogenic oxidizing agent having the property of oxidation action for said starting material to effect contact therebetween to thereby chemically form a plural number of precursors including precursors under excited state, and forming a metal deposited film on a substrate existing in the film forming space with the use of at least one precursor of these precursors as the feeding source for the constituent element of the deposited film.
Inventors
- 👤 Keishi Saitoh
- 👤 Masaaki Hirooka
- 👤 Jun-Ichi Hanna
- 👤 Isamu Shimizu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 11:13
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/06
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
232 words
A method for forming a metal deposited film on a substrate in a film forming space, which comprises: introducing into a reaction space a gaseous or gasifiable starting material containing a transition metal element for formation of said metal film and fluorine as a gaseous halogenic oxidizing agent having the property of oxidation action on said starting material for formation of said metal film; forming a mixture to effect chemical contact between said starting material and said fluorine through a gas introducing conduit system and thereby chemically producing a plural number of precursors including precursors in an excited state, said gas introducing conduit system including a plurality of coaxially aligned conduits each having an exit orifice with an outer conduit adapted to carry said fluorine and at least one inner conduit adapted to carry the starting material, said coaxially aligned conduits extending into said reaction space such that the exit orifice of said at least one inner conduit is set back from the exit orifice of the outer conduit to enable the fluorine in the outer conduit to surround the starting material exiting said at least one inner conduit, said substrate positioned form 5 mm. to 15 cm. from the exit orifice of said outer conduit; and depositing said metal film on said substrate including at least one of said precursors as the feeding source for the constituent element of the film.
Claim 2
Independent Claim
232 words
A method for forming a metal deposited film on a substrate in a film forming space, which comprises: introducing into a reaction space a gaseous or gasifiable starting material containing a transition metal element for formation of said metal film and fluorine as a gaseous halogenic oxidizing agent having the property of oxidation action on said starting material for formation of said metal film; forming a mixture to effect chemical contact between said starting material and said fluorine through a gas introducing conduit system and thereby chemically producing a plural number of precursors including precursors in an excited state, said gas introducing conduit system including a plurality of coaxially aligned conduits each having an exit orifice with an outer conduit adapted to carry said fluorine and at least one inner conduit adapted to carry the starting material, said coaxially aligned conduits extending into said reaction space such that the exit orifice of said at least one inner conduit is set back from the exit orifice of the outer conduit to enable the fluorine in the outer conduit to surround the starting material exiting said at least one inner conduit, said substrate positioned form 5 mm. to 15 cm. from the exit orifice of said outer conduit; and depositing said metal film on said substrate including at least one of said precursors as the feeding source for the constituent element of the film.
Claim 3
Dependent Claim
25 words
The method according to claim 1, wherein the transition metal element contained in said starting material is V, Cr, Mn, Fe, Ta, Pt, Au, Mo.
Claim 4
Dependent Claim
33 words
The method according to claim 1, wherein said substrate is arranged at a position opposed to the direction in which said gaseous starting material and said fluorine are introduced into said reaction space.
References Cited (Backward Citations)
US31708A
Cited
US2552626A
Cited
US3083550A
Cited
US3188230A
Cited
US3203827A
Cited
US3218204A
Cited
US3224912A
Cited
US3306768A
Cited
US3466191A
Cited
US3506556A
Cited
US3655429A
Cited
US3664866A
Cited
US3870558A
Cited
US3850679A
Cited
US3984587A
Cited
US4058430A
Cited
US4096822A
Cited
USRE31708E
Cited
US4146657A
Cited
US4206252A
Cited
US4180596A
Cited
US4328261A
Cited
GB2038086A
Cited
US4239811A
Cited
US4282267A
Cited
US4650539A
Cited
US4448801A
Cited
US4522663A
Cited
US4422407A
Cited
US4357179A
Cited
US4402762A
Cited
US4359490A
Cited
US4416217A
Cited
US4652463A
Cited
US4615905A
Cited
US4515107A
Cited
US4529679A
Cited
US4554180A
Cited
US4637938A
Cited
US4526809A
Cited
US4595601A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-07-03 | 1993-01-02 | 1993-07-04 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-07-03 | 1997-01-02 | 1997-07-04 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-07-03 | 2001-01-02 | 2001-07-04 | $7700.00 | Window Closed / Lapsed |