Patent US4830705A successfully refreshed from Google Patents.
US4830705A
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Method for etch of GaAs
Assignee: Texas Instruments Inc
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Filing: 1988-04-26
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Granted: 1989-05-16
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Expires: 2008-04-26
Abstract
Abstract A process for etch of GaAs wafers which utilizes the combination of remote and in situ plasma in a low pressure process module and the plasma is generated from a mixture of Helium, CH 4 ; and one of a group of CF 4 or F 2 with the process chamber within the process module being generally at ambient temperatures.
Inventors
- 👤 Lee M. Loewenstein
- 👤 Cecil J. Davis
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 07:48
CPC Classifications
H; H10; H10P; H10P90/00; H10P90/12; H10P90/126; H10P50/00; H10P50/20; H10P50/24; H10P50/246
Claims Analysis
Total Claims: 17
Claim 1
Independent Claim
75 words
A process for etch of GaAs comprising the steps of: (a) disposing a wafer of GaAs in a low pressure process chamber; (b) generating remote plasma from a gas comprised a mixture of Helium and a source of Fluorine; (c) introducing said remote plasma into said chamber and to said wafer; and (d) generating an in situ plasma within said chamber from a gas mixture of CH 4 , a source of Fluorine, and Helium.
Claim 2
Dependent Claim
75 words
A process for etch of GaAs comprising the steps of: (a) disposing a wafer of GaAs in a low pressure process chamber; (b) generating remote plasma from a gas comprised a mixture of Helium and a source of Fluorine; (c) introducing said remote plasma into said chamber and to said wafer; and (d) generating an in situ plasma within said chamber from a gas mixture of CH 4 , a source of Fluorine, and Helium.
Claim 3
Dependent Claim
18 words
The process as set forth in claim 1 wherein said remote and in situ plasmas are generated simultaneously.
Claim 4
Dependent Claim
32 words
The process as set forth in claim 1 wherein the source of Fluorine is taken from the group of CF 4 , NF 3 , SF 6 , and F 2 .
Claim 5
Dependent Claim
17 words
The process asa set forth in claim 1 wherein the process is carried out at ambient temperature.
Claim 6
Dependent Claim
15 words
The process as set forth in claim 1 wherein the low pressure is 1 Torr.
Claim 7
Dependent Claim
45 words
The precess as set forth in claim 1 wherein mixture for the in situ and remote plasmas has a flow comprised of one of the group of CF 4 or F 2 at 100 sccm, CH 4 at 250 sccm, and Helium of sccm 1000.
Claim 8
Dependent Claim
34 words
The process as set forth in claim 1 wherein the power utilized for generating the remote plasma is 400 watts at 2450 MHz and the in situ plasma is 100 watts at 13.56 MHz.
Claim 9
Dependent Claim
71 words
A process for etch of GaAs comprising the steps of: (a) disposing a wafer of GaAs in a process chamber; (b) generating at least free radicals from a gas comprised of a source of fluorine; (c) introducing said said at least free radicals into the chamber and to said wafer; and (d) generating an in situ plasma within said process chamber from the source of fluorine and a source of hydrocarbon.
Claim 10
Dependent Claim
71 words
A process for etch of GaAs comprising the steps of: (a) disposing a wafer of GaAs in a process chamber; (b) generating at least free radicals from a gas comprised of a source of fluorine; (c) introducing said said at least free radicals into the chamber and to said wafer; and (d) generating an in situ plasma within said process chamber from the source of fluorine and a source of hydrocarbon.
Claim 11
Dependent Claim
21 words
The process as set forth in claim 8 wherein said at least free radicals and in situ plasmas are generated simultaneously.
Claim 12
Dependent Claim
32 words
The process as set forth in claim 8 wherein the source of Fluorine is taken from the group of CF 4 , NF 3 , SF 6 , and F 2 .
Claim 13
Dependent Claim
15 words
The process as set forth in claim 8 wherein the source of hydrocarbon is methane.
Claim 14
Dependent Claim
17 words
The process as sset forth in claim 8 wherein the process is carried out at ambient temperature.
Claim 15
Dependent Claim
17 words
The process as set forth in claim 8 wherein the process is carried out at 1 Torr.
Claim 16
Dependent Claim
43 words
The process as set forth in claim 8 wherein the in situ and remote plasmas have a flow comprised of one of the group of CF 4 or F 2 at 100 sccm, CH 4 at 250 sccm, and Helium of sccm 1000.
Claim 17
Dependent Claim
36 words
The process as set forth in claim 8 wherein the power utilized for generating said at least free radicals is 400 watts at 2450 MHz and the in situ plasma is 100 watts at 13.56 MHz.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-05-15 | 1992-11-14 | 1993-05-16 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-05-15 | 1996-11-14 | 1997-05-16 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-05-15 | 2000-11-14 | 2001-05-16 | $7700.00 | Window Closed / Lapsed |