Integrated capacitor and method of fabricating same

Claim 1

A method of fabricating a capacitor on a semiconductor substrate, comprising the steps of: (a) forming a first oxide layer on the substrate; (b) providing through the first oxide layer a first capacitor plate in a selected portion of the substrate; (c) annealing the capacitor after said step (b) to restructure the first oxide layer and to grow a second oxide layer at the interface of the first oxide layer and the substrate; and (d) forming a second capacitor plate on the portion of the first oxide layer corresponding to the selected portion of the substrate.

Claim 2

A method of fabricating a capacitor on a semiconductor substrate, comprising the steps of: (a) forming a first oxide layer on the substrate; (b) providing through the first oxide layer a first capacitor plate in a selected portion of the substrate; (c) annealing the capacitor after said step (b) to restructure the first oxide layer and to grow a second oxide layer at the interface of the first oxide layer and the substrate; and (d) forming a second capacitor plate on the portion of the first oxide layer corresponding to the selected portion of the substrate.

Claim 10

A method of fabricating a capacitor on a semiconductor substrate, comprising the sequential steps of: (a) forming a first oxide layer on the substrate; (b) forming a first capacitor plate in a selected portion of the substrate underlying the oxide layer; (c) annnealing the first oxide layer to cure any defects in the first oxide layer and to grow a second oxide layer at the interface of the first oxide layer and the substrate; and (d) forming a second capacitor plate on the portion of the first oxide layer corresponding to the selected portion of the substrate.

Claim 11

A method of fabricating a capacitor on a semiconductor substrate, comprising the sequential steps of: (a) forming a first oxide layer on the substrate; (b) forming a first capacitor plate in a selected portion of the substrate underlying the oxide layer; (c) annnealing the first oxide layer to cure any defects in the first oxide layer and to grow a second oxide layer at the interface of the first oxide layer and the substrate; and (d) forming a second capacitor plate on the portion of the first oxide layer corresponding to the selected portion of the substrate.

Claim 13

A method of fabricating a semicodnuctor device including a capacitor on a semiconductor substrate, comprising the steps of: (a) forming a first oxide layer on the substrate; (b) implanting a dopant species in a selected portion of the substrate through the first oxide layer; (c) annealing the semiconductor device to diffuse the dopant species implanted in said step (b) to form a first capacitor plate in the substrate, to restructure the first oxide layer, and to grow a second oxide layer at the interface of the substrate and the first oxide layer; (d) forming a gate on a selected portion of the first oxide layer and forming a second capacitor plate on the portion of the first oxide layer corresponding to the position of the first capacitor plate; and (e) forming source and drain regions in portions of the substrate on opposite sides of the portion of the substrate corresponding to the position of the gate.

Claim 14

A method of fabricating a semicodnuctor device including a capacitor on a semiconductor substrate, comprising the steps of: (a) forming a first oxide layer on the substrate; (b) implanting a dopant species in a selected portion of the substrate through the first oxide layer; (c) annealing the semiconductor device to diffuse the dopant species implanted in said step (b) to form a first capacitor plate in the substrate, to restructure the first oxide layer, and to grow a second oxide layer at the interface of the substrate and the first oxide layer; (d) forming a gate on a selected portion of the first oxide layer and forming a second capacitor plate on the portion of the first oxide layer corresponding to the position of the first capacitor plate; and (e) forming source and drain regions in portions of the substrate on opposite sides of the portion of the substrate corresponding to the position of the gate.

Claim 19

A method of fabricating a semiconductor device including a capacitor on a semiconductor substrate of one conductivity type, comprising the steps of: (a) forming a well of the opposite conductivity type in the substrate; (b) growing a first oxide layer having a thickness of 380-420 Å on the well in an atmosphere comprising oxygen (O 2 ) and trichlorethane (TCA) at a temperature of approximately 900° C.; (c) implanting through the first oxide layer a dopant species corresponding to the one conductivity type in a selected portion of the well; (d) annealing the semiconductor device in an atmosphere comprising nitrogen (N 2 ), O 2 and TCA at a temperature of 1050° C. to diffuse the dopant species implanted in said step (c) to form a first capacitor plate, and to restructure the first oxide layer , and thereby growing a second oxide layer having a thickness of 20-60 Å at the interface of the well and the first oxide layer; (e) forming a second capacitor plate on the portion of the first oxide layer corresponding to the position of the first capacitor plate; (f) forming a gate on a selected portion of the first oxide layer; and (g) implanting self-aligned source and drain regions utilizing the gate as a mask.

Claim 20

A method of fabricating a semiconductor device including a capacitor on a semiconductor substrate of one conductivity type, comprising the steps of: (a) forming a well of the opposite conductivity type in the substrate; (b) growing a first oxide layer having a thickness of 380-420 Å on the well in an atmosphere comprising oxygen (O 2 ) and trichlorethane (TCA) at a temperature of approximately 900° C.; (c) implanting through the first oxide layer a dopant species corresponding to the one conductivity type in a selected portion of the well; (d) annealing the semiconductor device in an atmosphere comprising nitrogen (N 2 ), O 2 and TCA at a temperature of 1050° C. to diffuse the dopant species implanted in said step (c) to form a first capacitor plate, and to restructure the first oxide layer , and thereby growing a second oxide layer having a thickness of 20-60 Å at the interface of the well and the first oxide layer; (e) forming a second capacitor plate on the portion of the first oxide layer corresponding to the position of the first capacitor plate; (f) forming a gate on a selected portion of the first oxide layer; and (g) implanting self-aligned source and drain regions utilizing the gate as a mask.

Claim 21

A method of fabricating a capacitor having a uniform capacitance as a function of voltage on a semiconductor substrate, comprising the sequential steps of: (a) forming a first oxide layer on the substrate; (b) providing through the first oxide layer a first capacitor plate in a selected portion of the substrate; (c) annealing the thus formed structure in an oxidizing atmosphere to cure any defects in the crystalline structure of the first oxide layer caused during said step (b), thereby growing a second oxide layer at the interface of the first oxide layer and the substrate; and (d) forming a second capacitor plate on the portion of the first oxide layer corresponding to the selected portion of the substrate.

Claim 22

A method of fabricating a capacitor having a uniform capacitance as a function of voltage on a semiconductor substrate, comprising the sequential steps of: (a) forming a first oxide layer on the substrate; (b) providing through the first oxide layer a first capacitor plate in a selected portion of the substrate; (c) annealing the thus formed structure in an oxidizing atmosphere to cure any defects in the crystalline structure of the first oxide layer caused during said step (b), thereby growing a second oxide layer at the interface of the first oxide layer and the substrate; and (d) forming a second capacitor plate on the portion of the first oxide layer corresponding to the selected portion of the substrate.