Method of forming selective polysilicon wiring layer to source, drain and emitter regions by implantation through polysilicon layer

Claim 1

A method of manufacturing a semiconductor device, comprising the processes of: forming first and second well regions, which are of first and second conductivity types, respectively, in a semiconductor body; forming a base layer of the second conductivity type in the first well region; forming an emitter layer of the first conductivity type in the base layer; forming source and drain layers of the first conductivity type in the second well region; forming a polysilicon emitter electrode on the emitter layer; and ion-implanting impurities of the first conductivity type into an interface between the emitter layer and the emitter electrode, so as to break down an insulative layer at the interface.

Claim 2

A method of manufacturing a semiconductor device, comprising the processes of: forming first and second well regions, which are of first and second conductivity types, respectively, in a semiconductor body; forming a base layer of the second conductivity type in the first well region; forming an emitter layer of the first conductivity type in the base layer; forming source and drain layers of the first conductivity type in the second well region; forming a polysilicon emitter electrode on the emitter layer; and ion-implanting impurities of the first conductivity type into an interface between the emitter layer and the emitter electrode, so as to break down an insulative layer at the interface.

Claim 4

A method of manufacturing a semiconductor device, comprising the processes of: forming first and second well regions, which are of first and second conductivity types, respectively, in a semiconductor body; forming a gate insulation film on one side of each of the first and second well regions; forming a base layer of the second conductivity type on one side of the first well region; forming a contact hole in that part of the gate insulation film which is located on the base layer, thereby exposing part of the base layer; forming a polysilicon film on the gate insulation film and on an exposed part of the base layer; forming an emitter layer by introducing impurities of the first conductivity type into the base layer through the polysilicon film located on the exposed part of the base layer; ion-implanting impurities of the first conductivity type into an interface between the polysilicon film and the emitter layer, thereby breaking down an insulating film at the interface; removing a composite film, which includes the gate insulating film and the polysilicon film located on the second well region, such that the composite film remains in part on the second well region; ion-implanting impurities of the first conductivity type into the second well region, using the remaining composite film as a mask, thereby forming source and drain layers; and covering one side of the well regions with an insulating film

Claim 5

A method of manufacturing a semiconductor device, comprising the processes of: forming first and second well regions, which are of first and second conductivity types, respectively, in a semiconductor body; forming a gate insulation film on one side of each of the first and second well regions; forming a base layer of the second conductivity type on one side of the first well region; forming a contact hole in that part of the gate insulation film which is located on the base layer, thereby exposing part of the base layer; forming a polysilicon film on the gate insulation film and on an exposed part of the base layer; forming an emitter layer by introducing impurities of the first conductivity type into the base layer through the polysilicon film located on the exposed part of the base layer; ion-implanting impurities of the first conductivity type into an interface between the polysilicon film and the emitter layer, thereby breaking down an insulating film at the interface; removing a composite film, which includes the gate insulating film and the polysilicon film located on the second well region, such that the composite film remains in part on the second well region; ion-implanting impurities of the first conductivity type into the second well region, using the remaining composite film as a mask, thereby forming source and drain layers; and covering one side of the well regions with an insulating film

Claim 8

A method of manufacturing a semiconductor device, comprising the processes of: forming first and second well regions, which are of first and second conductivity types, respectively, in a semiconductor body; forming a gate insulation film on one side of each of the first and second well regions; forming a base layer of the second conductivity type on one side of the first well region; forming a polysilicon film on the gate insulation removing a composite film, which includes the gate insulation film and the polysilicon film located on the second well region, such that the composite film remains in part on the second well region; introducing impurities of the first conductivity type into the second well region, using the remaining composite film as a mask, thereby forming source and drain layers; covering one side of the semiconductor body with an insulating film; forming a contact hole in those portions of the insulating film which are located on the base and source layers; forming an emitter layer of the first cond.uctivity type in the source layer located in the contact hole; covering portions exposed by the contact holes with a polysilicon film; and ion-implanting impurities of the first conductivity type into an interface between the portions exposed by the contact holes and the polysilicon film, thereby breaking down an insulating layer at the interface.

Claim 9

A method of manufacturing a semiconductor device, comprising the processes of: forming first and second well regions, which are of first and second conductivity types, respectively, in a semiconductor body; forming a gate insulation film on one side of each of the first and second well regions; forming a base layer of the second conductivity type on one side of the first well region; forming a polysilicon film on the gate insulation removing a composite film, which includes the gate insulation film and the polysilicon film located on the second well region, such that the composite film remains in part on the second well region; introducing impurities of the first conductivity type into the second well region, using the remaining composite film as a mask, thereby forming source and drain layers; covering one side of the semiconductor body with an insulating film; forming a contact hole in those portions of the insulating film which are located on the base and source layers; forming an emitter layer of the first cond.uctivity type in the source layer located in the contact hole; covering portions exposed by the contact holes with a polysilicon film; and ion-implanting impurities of the first conductivity type into an interface between the portions exposed by the contact holes and the polysilicon film, thereby breaking down an insulating layer at the interface.