Patent US4766091A successfully refreshed from Google Patents.
US4766091A
Expired / Lapsed
US
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Method for producing an electronic device having a multi-layer structure
Assignee: Canon Inc
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Filing: 1986-12-24
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Granted: 1988-08-23
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Expires: 2006-12-24
Abstract
Abstract A method for producing an electronic device having a multi-layer structure comprising one or more controlled band gap semiconductor thin layers formed on a substrate comprises forming at least one of said controlled band gap semiconductor thin layers according to the photo CVD method and forming at least one of the other constituent layers according to the method comprising introducing a gaseous starting material for film formation and a gaseous halogenic oxidizing agent having the property of oxidizing said starting material into a reaction space to effect chemical contact therebetween to thereby form a plurality of precursors including a precursor in an excited state and transferring at least one of these precursors into a film forming space communicated with the reaction space as a feed source for the constituent element of the deposited film.
Inventors
- 👤 Hirokazu Ohtoshi
- 👤 Junichi Hanna
- 👤 Isamu Shimizu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 10:06
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; H10P14/29; H10P14/2901; H10P14/2923; C; C23; C23C; C23C16/00; C23C16/02; C23C16/44; C23C16/48; C23C16/482; C23C16/483; G; G03; G03G; G03G5/00; G03G5/02; G03G5/04; G03G5/08; G03G5/082; G03G5/08214; G03G5/08235; H10F; H10F10/00; H10F10/10; H10F10/17; H10F30/00; H10F30/10; H10F30/15; H10F71/00; H10F71/10; H10F71/103; H10P14/24; H10P14/2922; H10P14/32; H10P14/3202; H10P14/3204; H10P14/3211; H10P14/3242; H10P14/3244; H10P14/3251; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/3438; H10P14/3441; H10P14/3442; H10P14/3444; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/548; Y02P; Y02P70/00; Y02P70/50; Y10; Y10S; Y10S438/00; Y10S438/909
Claims Analysis
Total Claims: 21
Claim 1
Independent Claim
135 words
A method for producing an electronic device having a multi-layer structure comprising one or more controlled band gap semiconductor thin layers formed on a substrate, which comprises forming at least one of said controlled band gap semiconductor thin layers according to the photo CVD method and forming at least one of the other constituent layers according to the method comprising introducing a gaseous starting material for film formation and a gaseous halogenic oxidizing agent having the property of oxidizing said starting material into a reaction space to effect chemical contact therebetween to thereby form a plurality of precursors including a precursor in an excited state and transferring at least one of these precursors into a film forming space communicated with the reaction space as a feed source for the constituent element of the deposited film.
Claim 2
Independent Claim
135 words
A method for producing an electronic device having a multi-layer structure comprising one or more controlled band gap semiconductor thin layers formed on a substrate, which comprises forming at least one of said controlled band gap semiconductor thin layers according to the photo CVD method and forming at least one of the other constituent layers according to the method comprising introducing a gaseous starting material for film formation and a gaseous halogenic oxidizing agent having the property of oxidizing said starting material into a reaction space to effect chemical contact therebetween to thereby form a plurality of precursors including a precursor in an excited state and transferring at least one of these precursors into a film forming space communicated with the reaction space as a feed source for the constituent element of the deposited film.
Claim 3
Dependent Claim
24 words
A method for producing an electronic device according to claim 1, wherein said controlled band gap semiconductor thin layer is a tetrahedral type film.
Claim 4
Dependent Claim
22 words
A method for producing an electronic device according to claim 1, wherein said gaseous starting material is a chain type silane compound.
Claim 5
Dependent Claim
23 words
A method for producing an electronic device according to claim 3, wherein said chain type silane compound is a straight chain silane compound.
Claim 6
Dependent Claim
35 words
A method for producing an electronic device according to claim 4, wherein said straight chain silane compound is represented by the formula Si n H 2n+2 where n is an integer of 1 to 8.
Claim 7
Dependent Claim
23 words
A method for producing an electronic device according to claim 3, wherein said chain type silane compound is a branched chain silane compound.
Claim 8
Dependent Claim
26 words
A method for producing an electronic device according to claim 1, wherein said gaseous starting material is a silane compound having a cyclic structure of silicon.
Claim 9
Dependent Claim
22 words
A method for producing an electronic device according to claim 1, wherein said gaseous starting material is a chain type germane compound.
Claim 10
Dependent Claim
35 words
A method for producing an electronic device according to claim 8, wherein said chain type germanium compound is represented by the formula Ge m H 2m+2 where m is an integer of 1 to 5.
Claim 11
Dependent Claim
21 words
A method for producing an electronic device according to claim 1, wherein said gaseous starting material is a tetrahedral type compound.
Claim 12
Dependent Claim
21 words
A method for producing an electrode device according to claim 1, wherein said gaseous halogenic oxidizing agent contains a halogen gas.
Claim 13
Dependent Claim
20 words
A method for producing an electronic device according to claim 1, wherein said gaseous halogenic oxidizing agent contains fluorine gas.
Claim 14
Dependent Claim
20 words
A method for producing an electronic device according to claim 1, wherein said gaseous halogenic oxidizing agent contains chlorine gas.
Claim 15
Dependent Claim
26 words
A method for producing an electronic device according to claim 1, wherein said gaseous halogenic oxidizing agent is a gas containing fluorine atoms as a constituent.
Claim 16
Dependent Claim
21 words
A method for producing an electronic device according to claim 1, wherein said gaseous halogenic oxidizing agent contains a nascent halogen.
Claim 17
Dependent Claim
41 words
A method for producing an electronic device according to claim 1, wherein said substrate is arranged at a position opposed to the direction in which said gaseous starting material and said gaseous halogenic oxidizing agent are introduced into said reaction space.
Claim 18
Dependent Claim
27 words
A method for producing an electronic device according to claim 1, wherein a gaseous material for supplying a band gap controller is introduced into said reaction space.
Claim 19
Dependent Claim
28 words
A method for producing an electronic device according to claim 17, wherein said gaseous material is selected from carbon containing compounds, oxygen containing compounds, and nitrogen containing compounds.
Claim 20
Dependent Claim
119 words
A method for producing an electronic device according to claim 18, wherein said selected gaseous material is one selected from the group consisting of CH 4 , C 2 H 6 , C 3 H 8 , C 4 H 10 , C 2 H 4 , C 3 H 6 , C 4 H 8 , C 2 H 2 , C 6 H 6 , O 2 , CO 2 , NO, NO 2 , N 2 O, O 3 , CO, H 2 O, CH 3 OH, CH 3 CH 2 OH, N 2 , NH 3 , N 2 H 5 N 3 , N 2 H 4 , and NH 4 N 3 .
Claim 21
Dependent Claim
27 words
A method for producing an electronic device according to claim 1, wherein a gaseous material for supplying a valence electron controller is introduced into said reaction space.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1991-08-23 | 1992-02-22 | 1992-08-23 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-08-23 | 1996-02-22 | 1996-08-23 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-08-23 | 2000-02-22 | 2000-08-23 | $7700.00 | Window Closed / Lapsed |