Abstract Semiconductor substrate materials, such as silicon, useful in the manufacture of electronic devices, such as integrated circuits, having a 0.05 to 2.0 micron thick layer of polysilicon on the backside to improve gettering capabilities of defects, contaminants and impurities away from the active device region of the substrate are provided with a 10 to 40 micron deep region from the surface having reduced oxygen concentration. The oxygen denuding is accomplished by heating the substrate material at a temperature of 1050 DEG to 1250 DEG C. first in the presence of oxygen to break up oxygen nuclei, secondly in the presence of oxygen and halogen to permit stacking fault retrogrowth and oxygen outdiffusion, and thirdly in the presence of oxygen, nitrogen and/or argon.
The method of forming a denuded zone below the front surface of a semiconductor substrate having a polysilicon layer on the back surface comprising heating said substrate at a temperature of from 1050° C. to 1250° C. first in the presence of oxygen to break up oxygen nuclei, secondly in the presence of oxygen and halogen to permit stacking fault retrogrowth and oxygen outdiffusion, and thirdly in the presence of an atmosphere selected from the group consisting of oxygen, nitrogen, argon and mixtures thereof to outdiffuse oxygen and break up oxygen nuclei from the zone below the front surface.
Claim 2
Independent Claim
99 words
The method of forming a denuded zone below the front surface of a semiconductor substrate having a polysilicon layer on the back surface comprising heating said substrate at a temperature of from 1050° C. to 1250° C. first in the presence of oxygen to break up oxygen nuclei, secondly in the presence of oxygen and halogen to permit stacking fault retrogrowth and oxygen outdiffusion, and thirdly in the presence of an atmosphere selected from the group consisting of oxygen, nitrogen, argon and mixtures thereof to outdiffuse oxygen and break up oxygen nuclei from the zone below the front surface.
Claim 3
Dependent Claim
21 words
The method of claim 1 wherein said substrate is monocrystalline silicon and said polysilicon layer is 0.5 to 5.0 microns thick.
Claim 4
Dependent Claim
24 words
The method of claim 1 wherein said substrate is fourthly annealed at said temperature from 1050° C. to 1250° C. in an inert atmosphere.
Claim 5
Dependent Claim
18 words
The method of claim 1 wherein said heating is at a temperature of from 1100° to 1175° C.