EP0066461A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Semiconductor wafer and method of manufacturing the same
Assignee: Hitachi Ltd
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Filing: 1982-05-27
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Granted: —
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Expires: 2002-05-27
Abstract
Abstract A semiconductor wafer which has a denuded (oxygen reduced) zone about 5 - 100 µm thick and in which a defect underlying the denuded zone consists essentially only of stacking faults, and a method of manufacturing the same are disclosed. By heat-treating the semiconductor wafer at a predetermined temperature (1050 - 1150°C), essentially only stacking faults are formed in the inner part of the wafer, and a far better gettering effect than in the prior art can be attained.
Inventors
- 👤 Kikuo Watanabe
- 👤 Yukio Takano
- 👤 Iwao Takemoto
- 👤 Seigo Kishino
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-28 15:47
CPC Classifications
H; H10; H10P; H10P36/00; H10P36/20; H10P95/00; H10P95/90
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
52 words
A semiconductor wafer having a denuded zone which is formed within a front surface region in which a device is to be formed, and a defect beneath the denuded zone; characterised in that said denuded zone is approximately 5 - 100 µm thick and that the defect consists substantially of stacking faults.
Claim 2
Dependent Claim
52 words
A semiconductor wafer having a denuded zone which is formed within a front surface region in which a device is to be formed, and a defect beneath the denuded zone; characterised in that said denuded zone is approximately 5 - 100 µm thick and that the defect consists substantially of stacking faults.
Claim 3
Independent Claim
90 words
A method of manufacturing a semiconductor wafer comprising: (1) the step of heat-treating an initial semiconductor wafer, to remove oxygen contained within a front surface region of said initial semiconductor wafer and to form an oxygen reduced region therein, (2) the step of heat-treating the resultant semiconductor wafer, to form a nucleus of a crystal defect beneath said oxygen reduced region, and (3) the step of heat-treating the resultant semiconductor wafer, to form substantially only stacking faults beneath said oxygen reduced region and to perform gettering by said stacking faults.
Claim 4
Independent Claim
90 words
A method of manufacturing a semiconductor wafer comprising: (1) the step of heat-treating an initial semiconductor wafer, to remove oxygen contained within a front surface region of said initial semiconductor wafer and to form an oxygen reduced region therein, (2) the step of heat-treating the resultant semiconductor wafer, to form a nucleus of a crystal defect beneath said oxygen reduced region, and (3) the step of heat-treating the resultant semiconductor wafer, to form substantially only stacking faults beneath said oxygen reduced region and to perform gettering by said stacking faults.
Claim 5
Dependent Claim
28 words
A method of manufacturing a semiconductor wafer as defined in claim 2, wherein the temperature of the heat treatment in said step (1) is about 1000 - 1200°C.
Claim 6
Dependent Claim
27 words
A method of manufacturing a semiconductor wafer as defined in claim 2 or 3, wherein the heat treatment in step (I) is conducted in a non-oxidising atmosphere.
Claim 7
Independent Claim
33 words
A method of manufacturing a semiconductor wafer as defined in any one of claims 2 to 4, wherein the temperature of the heat treatment in said step (2) is about 600 - 1000°C.
Claim 8
Independent Claim
31 words
A method of manufacturing a semiconductor wafer as defined in any one of claims 2 to 5, wherein the temperature of the heat treatment in said step (3) is about 1050-1150°C.
Claim 9
Dependent Claim
28 words
A semiconductor device formed from a wafer according to claim 1 or from a wafer produced by a method according to any one of claims 2 to 6.
References Cited (Backward Citations)
No citation records indexed.
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