Resistor compositions

Claim 2

A thick film resistor composition for firing in a low oxygen-containing atmosphere comprising finely divided particles of (a) a semiconductive material consisting essentially of a cationic excess solid solution in metal oxide, of a metal (1) the oxide of which has a lower oxygen partial pressure at the firing temperature than the oxygen partial pressure of the atmosphere in which the composition is fired and (2) which has a free energy of formation more negative than copper; and (b) a nonreducing glass having a softening point below that of the semiconductive material, both dispersed in (c) organic medium.

Claim 3

The composition of claim 1 in which the semiconductive material is selected from Sn:SnO 2 , Sb:SnO 2 , In:SnO 2 , Zr:ZrO 2 , Hf:HfO 2 and Zr:HfO 2 .

Claim 4

The composition of claim 1 in which the nonreducing glass is selected from alumino borosilicate glass containing Ba 2+ , Ca 2+ , Zn 2+ , Na + and Zr 4+ , alumino borosilicate glass containing Pb 2+ and Bi 3+ , and alumino borosilicate glass containing Ca 2+ , Zr 4+ and Ti 4+ , lead germanate glass and mixtures thereof.

Claim 5

The composition of claim 1 which contains particles of a conductive material selected from RuO 2 , Ru, Cu, Ni, Ni 3 B and mixtures and precursors thereof.

Claim 6

A resistor element comprising a printed layer of thick film composition comprising finely divided particles of (a) a semiconductive material consisting essentially of a cationic excess solid solution in metal oxide of a metal (1) the oxide of which has a lower oxygen partial pressure at the firing temperature than the oxygen partial pressure of the atmosphere in which the composition is fired and (2) which has a free energy of formation more negative than copper; and (b) a nonreducing glass having a softening point below that of the semiconductive material, both dispersed in (c) organic medium, which composition has been fired in a low oxygen-containing atmosphere to effect volatilization of the organic medium therefrom and liquid phase sintering of the glass.

Claim 7

A resistor element comprising a printed layer of thick film composition comprising finely divided particles of (a) a semiconductive material consisting essentially of a cationic excess solid solution in metal oxide of a metal (1) the oxide of which has a lower oxygen partial pressure at the firing temperature than the oxygen partial pressure of the atmosphere in which the composition is fired and (2) which has a free energy of formation more negative than copper; and (b) a nonreducing glass having a softening point below that of the semiconductive material, both dispersed in (c) organic medium, which composition has been fired in a low oxygen-containing atmosphere to effect volatilization of the organic medium therefrom and liquid phase sintering of the glass.

Claim 8

A method for making a resistor element comprising the sequential steps of (1) applying a patterned thick film layer of the composition of claim 1 to a ceramic substrate; and (2) firing the composition in a low oxygen-containing atmosphere to effect volatilization of the organic medium therefrom and liquid phase sintering of the non-reducing glass.

Claim 9

A resistor element which has been fired in a low oxygen-containing atmosphere comprising a thick film layer of finely divided particles of (a) a semiconductive material consisting essentially of a cationic excess solid solution in metal oxide of a metal (1) the oxide of which has a lower oxygen partial pressure at the firing temperature than the oxygen partial pressure of the atmosphere in which the composition is fired and (2) which has a free energy of formation more negative than copper; and (b) a liquid phase-sintered nonreducing glass having a softening point below that of the semiconductive material.

Claim 10

A resistor element which has been fired in a low oxygen-containing atmosphere comprising a thick film layer of finely divided particles of (a) a semiconductive material consisting essentially of a cationic excess solid solution in metal oxide of a metal (1) the oxide of which has a lower oxygen partial pressure at the firing temperature than the oxygen partial pressure of the atmosphere in which the composition is fired and (2) which has a free energy of formation more negative than copper; and (b) a liquid phase-sintered nonreducing glass having a softening point below that of the semiconductive material.