Thick film resistor compositions

Claim 2

A resistor composition comprising an admixture of finely divided particles of (a) 4-75% wt. ruthenium-based conductive materials; (b) 96-25% wt. nonconductive glass; and (c) 0.05-15% wt. of a manganese vanadate compound corresponding to the formula: wherein M is a metal cation having an ionic radius of 0.4 to 0.8; M' is a metal cation having a valence of 4 to 6; n is 1 to 2 x is 0 to 0.5; y is 0 to 0.5; and A is varied to achieve electrical neutrality, the admixture being dispersed in an organic medium.

Claim 3

The composition of claim 1 in which the manganese vanadate corresponds to the formula Mn a V 2 O b , in which a is from 1 to 2 and b is from 6 to 7.

Claim 4

The composition of claim 2 in which the manganese vanadate is MnV 2 0 6 in either alpha or beta form or mixtures thereof.

Claim 5

The composition of claim 2 in which the manganese vanadate is MnV 2 0 7 .

Claim 6

The composition of claim 1 in which the ruthenium-based conductive material is selected from the group consisting of RuO 2 , compounds corresponding to the formula and mixtures thereof, wherein M is at least one of the group consisting of yttrium, thallium, indium, cadmium, lead and the rare earth metals of atomic number 57-71, inclusive: M' is at least one of platinum, titanium, chromium, rhodium and antimony; c is a number in the range 0 to 2; d is a number in the range 0 to about 0.5, that y is a number in the range 0 to 1 when M' is rhodium or more than one of platinum, and titanium; and e is a number in the range 0 to 1, being at least equal to about x/2 when M is divalent lead or cadmium.

Claim 7

The composition of claim 5 in which the conductor material is Bi 2 Ru 2 0 7 *

Claim 8

The composition of claim 5 in which the conductor material is BiPbRu 2 O 6.5 .

Claim 9

The composition of claim 5 in which the conductor material is Bi 0.2 Pb 1.8 Ru 2 O 6.1 .

Claim 10

The composition of claim 5 in which the conductor material is Pb 2 R u 2 0 6 .

Claim 11

A resistor comprising a thin layer of the dispersion of claim 1 which has been fired to volatilize the organic medium and to effect liquid phase sintering of the glass.

Claim 12

ll. The method of forming a resistor comprising (a) forming a patterned thin layer of the dispersion of claim 1, (b) drying the layer and (c) firing the dried layer to effect volatilization of the organic medium and to effect liquid phase sintering of the glass.