US4205298A
Expired / Lapsed
US
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Resistor material, resistor made therefrom and method of making the same
Assignee: Northrop Grumman Space and Mission Systems Corp
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Filing: 1978-11-20
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Granted: 1980-05-27
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Expires: 1998-11-20
Abstract
Abstract A vitreous enamel resistor material comprising a mixture of a vitreous glass frit and fine particles of tantalum nitride (Ta 2 N). The vitreous enamel resistor material may also include fine particles selected from boron, tantalum, silicon, zirconium dioxide (ZrO 2 ), and magnesium zirconate (MgZrO 3 ). An electrical resistor is made from the resistor material by applying the material to a substrate and firing the coated substrate to a temperature at which the glass melts. Upon cooling, the substrate has on a surface thereof a film of glass having the tantalum nitride particles and particles of the additive material, if used, embedded therein and dispersed therethroughout.
Inventors
- 👤 Howard E. Shapiro
- 👤 Kenneth M. Merz
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 03:27
CPC Classifications
H; H01; H01C; H01C17/00; H01C17/06; H01C17/065; H01C17/06506; H01C17/06513; Y; Y10; Y10T; Y10T29/00; Y10T29/49; Y10T29/49002; Y10T29/49082
Claims Analysis
Total Claims: 33
Claim 1
Independent Claim
20 words
A resistor material consisting essentially of a mixture of a glass frit and particles of tantalum nitride (Ta 2 N).
Claim 2
Dependent Claim
20 words
A resistor material consisting essentially of a mixture of a glass frit and particles of tantalum nitride (Ta 2 N).
Claim 3
Dependent Claim
25 words
A resistor material in accordance with claim 1 in which the tantalum nitride is present in the amount of about 29% to 78% by weight.
Claim 4
Dependent Claim
44 words
A resistor material comprising a mixture of a glass frit, particles of tantalum nitride (Ta 2 N), and additive particles, said additive particles being selected from the group consisting of boron, tantalum, silicon, zirconium dioxide (ZrO 2 ), and magnesium zirconate (MgZrO 3 ).
Claim 5
Dependent Claim
44 words
A resistor material comprising a mixture of a glass frit, particles of tantalum nitride (Ta 2 N), and additive particles, said additive particles being selected from the group consisting of boron, tantalum, silicon, zirconium dioxide (ZrO 2 ), and magnesium zirconate (MgZrO 3 ).
Claim 6
Dependent Claim
26 words
A resistor material in accordance with claim 3 in which the tantalum nitride particles are present in the amount of about 29% to 78% by weight.
Claim 7
Dependent Claim
30 words
A resistor material in accordance with claim 4 in which the additive particles are present in an amount of up to approximately 100% by weight of the tantalum nitride particles.
Claim 8
Dependent Claim
45 words
An electrical resistor comprising a ceramic substrate and a resistor material on a surface of said substrate, said resistor material comprising a film of glass containing an effective amount of conductive particles of tantalum nitride (Ta 2 N) embedded in and dispersed throughout the glass.
Claim 9
Dependent Claim
45 words
An electrical resistor comprising a ceramic substrate and a resistor material on a surface of said substrate, said resistor material comprising a film of glass containing an effective amount of conductive particles of tantalum nitride (Ta 2 N) embedded in and dispersed throughout the glass.
Claim 10
Dependent Claim
24 words
An electrical resistor in accordance with claim 6 in which the resistor material contains about 29% to 78% by weight of the tantalum nitride.
Claim 11
Dependent Claim
68 words
An electrical resistor comprising a ceramic substrate and a resistor material on a surface of said substrate, said resistor material comprising a film of glass and particles of tantalum nitride (Ta 2 N) and additive particles embedded in and dispersed throughout the glass film, said additive particles being selected from the group consisting of boron, tantalum, silicon, zirconium dioxide (ZrO 2 ), and magnesium zirconate (MgZrO 3 ).
Claim 12
Dependent Claim
68 words
An electrical resistor comprising a ceramic substrate and a resistor material on a surface of said substrate, said resistor material comprising a film of glass and particles of tantalum nitride (Ta 2 N) and additive particles embedded in and dispersed throughout the glass film, said additive particles being selected from the group consisting of boron, tantalum, silicon, zirconium dioxide (ZrO 2 ), and magnesium zirconate (MgZrO 3 ).
Claim 13
Dependent Claim
25 words
An electrical resistor in accordance with claim 7 in which the resistor material contains about 29% to about 78% by weight of the tantalum nitride.
Claim 14
Dependent Claim
29 words
An electrical resistor in accordance with claim 9 in which the additive particles are present in an amount of up to approximately 100% by weight of the tantalum nitride.
Claim 15
Independent Claim
64 words
A method of making an electrical resistor comprising the steps of mixing together a glass frit and particles consisting essentially of tantalum nitride (Ta 2 N), coating the mixture onto the surface of a substrate of an electrical insulating material, firing said coated substrate in a substantially inert atmosphere at a temperature at which the glass frit melts, and then cooling said coated substrate.
Claim 16
Independent Claim
64 words
A method of making an electrical resistor comprising the steps of mixing together a glass frit and particles consisting essentially of tantalum nitride (Ta 2 N), coating the mixture onto the surface of a substrate of an electrical insulating material, firing said coated substrate in a substantially inert atmosphere at a temperature at which the glass frit melts, and then cooling said coated substrate.
Claim 17
Dependent Claim
22 words
The method in accordance with claim 11 in which the mixture contains about 29% to 78% by weight of the tantalum nitride.
Claim 18
Dependent Claim
28 words
The method in accordance with claim 12 in which the additive particles are present in an amount of up to approximately 100% by weight of the tantalum nitride.
Claim 19
Dependent Claim
27 words
The method in accordance with claim 11 including the step of preparing the tantalum nitride (Ta 2 N) by heat treating tantalum particles in a nitrogen atmosphere.
Claim 20
Dependent Claim
36 words
The method in accordance with claim 14 in which the tantalum particles are heat treated by heating up to a maximum temperature within the range of 600° C. to 1000° C. for a one hour cycle.
Claim 21
Independent Claim
87 words
A method of making an electrical resistor comprising the steps of mixing together a glass frit, and particles of tantalum nitride (Ta 2 N) and of an additive material selected from the group consisting of boron, tantalum, silicon, zirconium dioxide (ZrO 2 ), and magnesium zirconate (MgZrO 3 ), coating the mixture onto the surface of a substrate of an electrical insulating material, firing said coated substrate in a substantially inert atmosphere at a temperature at which the glass frit melts, and then cooling said coated substrate.
Claim 22
Independent Claim
87 words
A method of making an electrical resistor comprising the steps of mixing together a glass frit, and particles of tantalum nitride (Ta 2 N) and of an additive material selected from the group consisting of boron, tantalum, silicon, zirconium dioxide (ZrO 2 ), and magnesium zirconate (MgZrO 3 ), coating the mixture onto the surface of a substrate of an electrical insulating material, firing said coated substrate in a substantially inert atmosphere at a temperature at which the glass frit melts, and then cooling said coated substrate.
Claim 23
Dependent Claim
27 words
The method in accordance with claim 16 in which the tantalum particles are present in the amount of 29% to 78% by weight of the tantalum nitride.
Claim 24
Dependent Claim
28 words
The method in accordance with claim 16 in which the additive particles are present in an amount of up to approximately 100% by weight of the tantalum nitride.
Claim 25
Dependent Claim
27 words
The method in accordance with claim 16 including the step of preparing the tantalum nitride (Ta 2 N) by heat treating tantalum particles in a nitrogen atmosphere.
Claim 26
Dependent Claim
61 words
An electrical resistor made by the steps of mixing together a glass frit and particles consisting essentially of tantalum nitride (Ta 2 N), coating the mixture onto the surface of a substrate of an electrical insulating material, firing said coated substrate in a substantially inert atmosphere at a temperature at which the glass frit melts, and then cooling said coated substrate.
Claim 27
Dependent Claim
61 words
An electrical resistor made by the steps of mixing together a glass frit and particles consisting essentially of tantalum nitride (Ta 2 N), coating the mixture onto the surface of a substrate of an electrical insulating material, firing said coated substrate in a substantially inert atmosphere at a temperature at which the glass frit melts, and then cooling said coated substrate.
Claim 28
Dependent Claim
23 words
An electrical resistor made in accordance with claim 20 in which the mixture contains 29% to 78% by weight of the tantalum nitride.
Claim 29
Dependent Claim
30 words
An electrical resistor made in accordance with claim 15 in which the additive particles are present in an amount of up to approximately 100% by weight of the tantalum nitride.
Claim 30
Dependent Claim
84 words
An electrical resistor made by the steps of mixing together a glass frit, and particles of tantalum nitride (Ta 2 N) and of an additive material selected from the group consisting of boron, tantalum, silicon, zirconium dioxide (ZrO 2 ), and magnesium zirconate (MgZrO 3 ), coating the mixture onto the surface of a substrate of an electrical insulating material, firing said coated substrate in a substantially inert atmosphere at a temperature at which the glass frit melts, and then cooling said coated substrate.
Claim 31
Dependent Claim
84 words
An electrical resistor made by the steps of mixing together a glass frit, and particles of tantalum nitride (Ta 2 N) and of an additive material selected from the group consisting of boron, tantalum, silicon, zirconium dioxide (ZrO 2 ), and magnesium zirconate (MgZrO 3 ), coating the mixture onto the surface of a substrate of an electrical insulating material, firing said coated substrate in a substantially inert atmosphere at a temperature at which the glass frit melts, and then cooling said coated substrate.
Claim 32
Dependent Claim
26 words
An electrical resistor made in accordance with claim 23 in which the tantalum nitride particles are present in the amount of 29% to 78% by weight.
Claim 33
Dependent Claim
29 words
An electrical resistor made in accordance with claim 24 in which the additive particles are present in an amount up to approximately 100% by weight of the tantalum nitride.
References Cited (Backward Citations)
US3394087A
Cited
US4053866A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1983-05-27 | 1983-11-26 | 1984-05-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1987-05-27 | 1987-11-26 | 1988-05-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1991-05-27 | 1991-11-26 | 1992-05-27 | $7700.00 | Window Closed / Lapsed |