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US4585489A
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Method of controlling lifetime of minority carriers by electron beam irradiation through semi-insulating layer
Assignee: Toshiba Corp
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Filing: 1984-09-07
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Granted: 1986-04-29
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Expires: 2004-09-07
Abstract
Abstract A semiconductor device and a method of manufacturing the same are disclosed wherein a semi-insulating film having a high trap density is formed on a semiconductor substrate so as to prevent charges from remaining in the semi-insulating film and to prevent a change in carrier density at the substrate surface upon irradiation thereof with radiation. The lifetime of minority carriers can be easily controlled without decreasing the junction breakdown voltages.
Inventors
- 👤 Shun-ichi Hiraki
- 👤 Kazuo Tsuru
- 👤 Yoshikazu Usuki
- 👤 Yutaka Koshino
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 14:06
CPC Classifications
H; H10; H10P; H10P95/00; H10P95/90; H10P34/00; H10P34/40; H10P14/00; H10P14/60; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/6336; H10P14/65; H10P14/6516; H10P14/6529; H10P14/69; H10P14/692; H10P14/6921; H10P14/69215; H10P14/694; H10P14/6943; H10P14/69433; Y; Y10; Y10S; Y10S148/00; Y10S148/023; Y10S148/046; Y10S257/00; Y10S257/905; Y10S438/00; Y10S438/904
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
63 words
A method of controlling the lifetime of minority carriers by electron beam irradiation through a semi-insulating layer, comprising the steps of: forming the semi-insulating layer on a semiconductor substrate having at least one rectifying junction; and irradiating the semiconductor substrate with an electron beam through the semi-insulating layer so as to control the lifetime of the minority carriers contained in the semiconductor substrate.
Claim 2
Independent Claim
63 words
A method of controlling the lifetime of minority carriers by electron beam irradiation through a semi-insulating layer, comprising the steps of: forming the semi-insulating layer on a semiconductor substrate having at least one rectifying junction; and irradiating the semiconductor substrate with an electron beam through the semi-insulating layer so as to control the lifetime of the minority carriers contained in the semiconductor substrate.
Claim 3
Dependent Claim
27 words
A method according to claim 1, wherein said semi-insulating film is directly formed on the rectifying junction which is exposed on a surface of said semiconductor substrate.
Claim 4
Dependent Claim
20 words
A method according to claim 1, wherein the electron beam is radiated at an energy of at least 0.5 MeV.
Claim 5
Dependent Claim
65 words
A method according to claim 1 or 2, wherein said semi-insulating film consists of one member selected from the group consisting of polycrystalline silicon containing at least one of oxygen and nitrogen, amorphous silicon containing at least one of oxygen and nitrogen, polycrystalline silicon carbide containing at least one of oxygen and nitrogen, and amorphous silicon carbide containing at least one of oxygen and nitrogen.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1989-04-28 | 1989-10-28 | 1990-04-29 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1993-04-28 | 1993-10-28 | 1994-04-29 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1997-04-28 | 1997-10-28 | 1998-04-29 | $7700.00 | Window Closed / Lapsed |