Abstract A high resistance semiconductor substrate body with a thin low resistance active semiconductor layer thereon is generated by a method including the steps of subjecting the semiconductor substrate body to neutron bombardment to a degree which produces high resistance in the semiconductor body and whereby doping substances are generated in the substrate body by the thermal neutron bombardment. A thin low resistant active semiconductor layer is then generated on the substrate body by annealing, a surface of the semiconductor substrate body up to a selected depth by laser radiation or electron radiation such that the lattice deterioration which was caused by the neutron bombardment is eliminated but the doping which was generated by the transmutation of elements during neutron bombardment remains. The annealing can be undertaken only in selected regions on the surface of the semiconductor substrate body, thereby facilitating the construction of integrated circuit components thereon.
A method for producing a high-resistant substrate body with a low-resistant active semiconductor layer consisting of the same semiconductor material as said substrate body comprising the steps of: bombarding a gallium arsenide substrate body with thermal neutrons until said substrate body achieves high resistance; irradiating a surface of said substrate with laser or electron radiation for annealing said substrate, said substrate having doping atoms generated by means of neutron transmutation as a result of said bombarding and irradiating for generating said low resistant active semiconductor layer at said surface having a predetermined depth; and maintaining said substrate body free of chromium atoms at all times.
Claim 2
Independent Claim
105 words
A method for producing a high-resistant substrate body with a low-resistant active semiconductor layer consisting of the same semiconductor material as said substrate body comprising the steps of: bombarding a gallium arsenide substrate body with thermal neutrons until said substrate body achieves high resistance; irradiating a surface of said substrate with laser or electron radiation for annealing said substrate, said substrate having doping atoms generated by means of neutron transmutation as a result of said bombarding and irradiating for generating said low resistant active semiconductor layer at said surface having a predetermined depth; and maintaining said substrate body free of chromium atoms at all times.
Claim 3
Dependent Claim
40 words
The method of claim 1 wherein said step of irradiating said surface of said semiconductor substrate body with laser radiation is further defined by selecting laser radiation having a wave length such that a predetermined radiation penetration depth is achieved.
Claim 4
Dependent Claim
44 words
The method of claim 1 wherein the step of irradiating said surface of said substrate body with electron radiation is further defined by selecting electron radiation having an energy and a dose such that a thin predetermined penetration depth of said radiation is achieved.
Claim 5
Dependent Claim
60 words
A method for producing a high-resistant substrate body with a low-resistant layer as claimed in claim 1 wherein the step of irradiating said surface of said substrate body with electron or laser radiation is further defined by laterally restricting the areas of said substrate surface irradiated by said radiation such that said substrate body remains high-resistant outside of said areas.
Claim 6
Dependent Claim
40 words
A method for producing a high-resistant substrate body with a low-resistant layer as claimed in claim 4 comprising the additional step of disposing terminal pads for a semiconductor component on said portions of said substrate body which remain high resistant.